Preliminary Product Description SPA-1318 Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. 2150 MHz 1 Watt Power Amplifier with Active Bias This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. Product Features • On-chip Active Bias Control • Power Control Allows Power Consumption Reduction VCC VBIAS RFOUT/ VCC RFIN N/C • Patented High Reliability GaAsHBT Technology • High Linearity Performance: +48dBm OIP3 Typ. • Surface-Mountable Plastic Package Active Bias Input Match Applications • W-CDMA Systems • Multi-Carrier Applications Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25ºC, Vcc = 5.0V Units Min. Frequency of Operation MHz 2110 P 1dB Output Power at 1dB Compression dB m 29.5 S 21 Small Signal Gain dB 11.5 - 1.4:1 Output Third Order Intercept Point Power out per tone = +14dBm dB m 48.0 Device Current mA 320 ºC/W 40 Symbol f0 VSWR OIP3 Icc Rth, j-l Input VSWR Thermal Resistance (junction - lead) Typ. Max. 2170 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101429 Rev B Preliminary Preliminary SPA-1318 2150 MHz 1 Watt Power Amp. 2150 MHz Application Circuit Data, Icc=320mA, T=+25C, Vcc=5V Note: Tuned for Output IP3 Input/Output Return Loss, Isolation vs Frequency 0 Gain vs. Frequency 14 -5 13 -1 0 S22 12 -1 5 -2 0 dB dB S11 -2 5 11 10 -3 0 S12 25C -40 C 85C 9 -3 5 8 2.11 -4 0 2 .1 1 2 .1 2 2 .1 3 2 .1 4 2 .1 5 2 .1 6 2 .1 7 2.1 2 2.13 P1dB vs Frequency 32 2 .1 4 2 .1 5 2 .1 6 2 .17 2 .1 6 2 .1 7 GHz GHz OIP3 vs. Frequency (POUT per tone = 14dBm) 60 25C -40C 85C 31 55 50 dBm dBm 30 45 29 40 28 25C -40 C 85C 35 27 2.11 2.12 2.13 2.14 2.15 2.16 30 2 .1 1 2.17 2 .1 2 2 .1 3 GHz 2 .1 5 GHz OIP3 vs Tone Power 2.14 GHz 60 2 .1 4 Device Current vs. Source Voltage 450 25C -4 0C 85C 400 Device Current (mA) 50 dBm 40 30 20 25C -40C 85C 10 350 300 250 200 150 100 50 0 0 5 9 13 17 21 25 0 POUT per tone (dBm) 726 Palomar Ave., Sunnyvale, CA 94085 1 2 3 4 5 Vcc (V) Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101429 Rev B Preliminary Preliminary SPA-1318 2150 MHz 1 Watt Power Amp. 850-950 MHz Application Circuit Data (Optimized for IP3), Icc=400mA, T=+25C, Vcc=5V, The W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power -30 Adjacent Channel Power (dBc) -35 -40 -45 -50 -55 -60 -65 16 19 22 25 Channel Output Power (dBm) W-CDMA at 2.14 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101429 Rev A Preliminary Preliminary SPA-1318 2150 MHz 1 Watt Power Amp. Voltage Feed Resistor Bias Circuit (for 5V supply) Vcc 8.2pF 5.6pF 1.2 nH 10uF 1000pF 8.2pF 360 Ω 1 8 2 7 3 6 4 5 15 nH Z=50Ω, 17.6° 22pF 1.8pF 68pF 2110 -2170 MHz Schematic Vbias Vcc 10uF Tantalum 1000pF 5.6pF 1.2nH 8.2pF 360 Ω 15nH 8.2pF 68pF 22pF 1.8pF ECB-101161 Rev. B Vpc SOIC-8 PA Eval Board 2110 -2170 MHz Evaluation Board Layout 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101429 Rev B Preliminary Preliminary SPA-1318 2150 MHz 1 Watt Power Amp. Pin # Function 1 V cc 2 V bi as 3 RF In 4 N/C Description Device Schematic VCC is the supply voltage for the active bias network. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. 1 Vbias is the bias control pin for the active bias network. Device current is set by the current into this pin. Recommended configuration shown in the Application Schematic is required for optimum RF performance. 2 ACTIVE BIAS NETWORK 5-8 RF input pin. This pin requires the use of an external DC blocking capacitor. No connection 3 5, 6, 7, 8 EPAD RF Out/Vcc RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. Gnd Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 6). Absolute Maximum Ratings Operation of this device above any one of these Parameter parameters may cause permanent damage. Supply Current (I ) D Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l 522 Almanor Ave., Sunnyvale, CA 94085 V Power Dissipation 4.0 W Operating Lead Temperature (TL) Operating Junction Temperature (TJ) Phone: (800) SMI-MMIC 5 mA 6.0 Storage Temperature Range Appropriate precautions in handling, packaging and testing devices must be observed. Unit 750 Device Voltage (VD) RF Input Power Caution: ESD sensitive Value -40 to +85 ºC 800 mW -40 to +150 ºC +150 ºC http://www.stanfordmicro.com EDS-101429 Rev A Preliminary Preliminary SPA-1318 2150 MHz 1 Watt Power Amp. Part Number Ordering Information 3 6 Reel Siz e SPA-1318 500 7" EXPOSED PAD .194 [4.93] 2 1 XXXX SPA 1318 5 Devices Per Reel Package Outline Drawing .035 [.889] .045 [1.143] 4 Part Number 7 .155 [3.937] .078 [1.969] .236 [5.994] .061 [1.549] 8 TOP VIEW BOTTOM VIEW .050 [1.27] .016 [.406] .061 [1.549] .058 [1.473] .013 [.33] x 45° .008 .008 [.203] .194 [4.928] .003 [.076] .155 [3.937] SEATING PLANE SEE DETAIL A SIDE VIEW END VIEW Recommended Land Pattern PARTING LINE .15 [3.81] .025 .24 [6.22] 5° .16 [4.02] .33 [8.42] DETAIL A Note: XXXX represents the lot code .11 [2.71] .05 [1.27] .02 [.60] Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling information for Exposed Pad TM SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production, this baking procedure is not necessary if parts are used within 48 hours of opening the sealed shipping materials. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101429 Rev B