STANFORD SPA-1218

Preliminary
Product Description
SPA-1218
Stanford Microdevices’ SPA-1218 is a high efficiency GaAs
Heterojunction Bipolar Transistor (HBT) amplifier housed in
a low-cost surface-mountable plastic package. These HBT
amplifiers are fabricated using molecular beam epitaxial
growth technology which produces reliable and consistent
performance from wafer to wafer and lot to lot.
1960 MHz 1 Watt Power Amp with
Active Bias
This product is specifically designed for use as a driver
amplifier for infrastructure equipment in the 1950 MHz PCS
band. Its high linearity makes it an ideal choice for multi-carrier
and digital applications.
VCC
Active
Bias
VBIAS
RFOUT/
VCC
RFIN
N/C
Symbol
f0
P 1dB
Input
Match
U nits
Min.
Frequency of Operati on
MHz
1930
Output Power at 1dB C ompressi on
Vc1, Vbi as, Vc2 = 5.0V
dB m
29.5
dB
12.0
-
1.5:1
dB m
48.0
mA
320
ºC /W
40
Small Si gnal Gai n
S11
Input VSWR
Icc
Rth, j-l
Applications
• PCS Systems
• Multi-Carrier Applications
Parameters: Test C onditions:
Z0 = 50 Ohms, VC C =5V, Temp = 27ºC
S 21
OIP3
Product Features
• On-chip Active Bias Control
• Patented High Reliability GaAsHBT Technology
• High Linearity Performance: +48dBm OIP3 Typ.
• Surface-Mountable Plastic Package
Output Thi rd Order Intercept Poi nt
Power out per tone = +14 dBm
D evi ce C urrent, VC C = 5V
Thermal Resi stance (juncti on - lead)
Typ.
Max.
1990
The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions.
Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are
subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not
authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems.
Copyright 2000 Stanford Microdevices, Inc. All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.stanfordmicro.com
EDS-101428 Rev A
Preliminary
Preliminary
SPA-1218 1950 MHz 1 Watt Power Amp.
1950 MHz Application Circuit Data, Icc=320 mA, T=+27C, VCC=5V
Note: Tuned for Output IP3
P1dB vs Frequency
Gain vs. Frequency
16
32
30
14
26
dB
dBm
28
24
25C
22
85C
-40C
20
1.93
1.94
1.95
1.96
1.97
1.98
25C
-40C
10
85C
8
1.93
1.99
dBm
40
35
25C
1.94
1.95
1.96
1.97
-40C
25
S12
1.98
85C
20
1.93
1.99
1.94
1.95
1.97
1.98
1.99
Device Current vs. Source Voltage
55
Device Current (mA)
50
45
40
35
25C
-40C
85C
20
13
1.96
GHz
Output Third Order Intercept vs.
Tone Power, 1.96 GHz
dBm
1.99
45
GHz
8
1.98
50
30
25
1.97
Output Third Order Intercept vs.
Frequency (POUT per tone = 11dBm)
S11
30
1.96
Input/Output Return Loss,
Isolation vs Frequency
S22
-35
-40
1.93
1.95
GHz
55
-5
-10
-15
-20
-25
-30
1.94
GHz
0
dB
12
18
23
400
350
300
250
200
150
100
50
0
-50
25C
-40C
85C
0
POUT per tone (dBm)
522 Almanor Ave., Sunnyvale, CA 94085
1
2
3
4
5
VS (V)
Phone: (800) SMI-MMIC
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EDS-101428 Rev A
Preliminary
Preliminary
SPA-1218 1950 MHz 1 Watt Power Amp.
Vcc
10uF,
Tantalum
0.047uF
270pF
100nH,
LL1608-FS
22pF
390Ω
1
8
2
7
3
6
4
5
22nH,
LL1608-FS
68pF
Z=50Ω, 23.6°
1.8 pF
1930-1990 MHz Schematic
Vbias
Vcc
10uF Tantalum
0.047uF
100nH
LL1608-FS
270pF
390W
22nH
LL1608-FS
22pF
68pF
1.8pF
Vpc
ECB-101161 Rev. B
SOIC-8 PA
Eval Board
1930-1990 MHz Evaluation Board Layout
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
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EDS-101428 Rev A
Preliminary
Preliminary
SPA-1218 1950 MHz 1 Watt Power Amp.
Pin #
Function
1
VC C
VCC is the supply voltage for the active bias network.
Bypassing in the appropriate location as shown on
application schematic is required for optimum RF
performance.
2
V bi as
Vbias is the bias control pin for the active bias network.
Device current is set by the current into this pin.
Recommended configuration is shown in the Application
Schematic. Bypassing in the appropriate location as
shown on application schematic is required for optimum
RF performance.
3
RF In
4
N/C
Description
Device Schematic
1
2
RF input pin. This pin requires the use of an external
DC blocking capacitor chosen for the frequency of
operation.
ACTIVE BIAS
NETWORK
5-8
No connection
5
RF Out/Vcc RF output and bias pin. Bias should be supplied to this
pin through an external RF choke. Because DC biasing
is present on this pin, a DC blocking capacitor should
be used in most applications (see application
schematic). The supply side of the bias network should
be well bypassed. An output matching network is
necessary for optimum performance.
6
RF Out/Vcc Same as Pin 5
7
RF Out/Vcc Same as Pin 5
8
RF Out/Vcc Same as Pin 5
3
Absolute Maximum Ratings
Operation of this device above any one of these
parameters may cause permanent damage.
Bias Conditions should also satisfy the following
expression: IDVD (max) < (TJ - TOP)/Rth,j-l
Value
U nit
Supply C urrent (ID)
Parameter
750
mA
D evi ce Voltage (VD)
6.0
V
Power D i ssi pati on
4.0
W
Operati ng Temperature (TOP)
RF Input Power
Storage Temperature Range
Operati ng Juncti on Temperature (TJ)
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
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-40 to +85
ºC
+500
mW
-40 to +150
ºC
+150
ºC
http://www.stanfordmicro.com
EDS-101428 Rev A
Preliminary
Preliminary
SPA-1218 1950 MHz 1 Watt Power Amp.
Part Number Ordering Information
Caution: ESD sensitive
Appropriate precautions in handling, packaging and
testing devices must be observed.
Part Number
Devices Per Reel
Reel Siz e
SPA-1218
500
7"
Package Outline Drawing
.035 [.889]
.045 [1.143]
3
4
.194 [4.93]
1
2
XXXX
SPA
1218
8
7
EXPOSED PAD
.078 [1.969]
.155 [3.937] .236 [5.994]
.061 [1.549]
5
6
TOP VIEW
BOTTOM VIEW
.050 [1.27]
.016 [.406]
.061 [1.549]
.058 [1.473]
.013 [.33] x 45°
.008
.008 [.203]
.194 [4.928]
.003 [.076]
.155 [3.937]
SEATING PLANE
SEE DETAIL A
SIDE VIEW
END VIEW
Recommended Land Pattern
PARTING LINE
.15 [3.81]
.025
5°
.24 [6.22]
.16 [4.02] .33 [8.42]
DETAIL A
Note: XXXX represents the lot code
.11 [2.71]
.05 [1.27]
.02 [.60]
Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling
information for Exposed Pad TM SOIC-8 products) to ensure no moisture is trapped in the encapsulated
package. In production, this baking procedure is not necessary if parts are used within 24 hours of opening
the sealed shipping materials.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
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http://www.stanfordmicro.com
EDS-101428 Rev A