FAIRCHILD FDMF6704

FDMF6704 - XSTM DrMOS
The Xtra Small High Performance, High Frequency DrMOS Module
Benefits
tm
General Description
The XSTM DrMOS family is Fairchild’s next-generation fullyoptimized ultra-compact integrated MOSFET plus driver power
stage solution for high current, high frequency synchronous
buck DC-DC applications. The FDMF6704 DrMOS integrates a
driver IC, two power MOSFETs and a bootstrap Schottky diode
into a thermally enhanced compact 6 mm x 6 mm MLP
package. With an integrated approach, the complete switching
power stage is optimized with regards to driver and MOSFET
dynamic performance, system inductance and RDS(ON). This
greatly reduces the package parasitics and layout challenges
associated with conventional discrete solutions. The driver IC
incorporates advanced features such as SMOD. PWM input is
Tri-State compatible. A 5 V gate drive and an improved PCB
interface [Low Side MOSFET exposed pad] ensure higher
performance. This product is compatible with the new Intel
6 mm x 6 mm DrMOS specification.
Ultra compact size - 6 mm x 6 mm MLP, 44 % space
saving compared to conventional MLP 8 mm x 8 mm
DrMOS packages.
Fully optimized system efficiency.
Clean voltage waveforms with reduced ringing.
High frequency operation.
Compatible with a wide variety of PWM controllers in the
market.
Features
Ultra- compact thermally enhanced 6 mm x 6 mm MLP
package 84 % smaller than conventional discrete solutions.
Synchronous driver plus FET multichip module.
High current handling of 35 A.
Over 93 % peak efficiency.
Applications
Tri-State PWM input.
Fairchild's PowerTrench® 5 technology MOSFETs for clean
voltage waveforms and reduced ringing.
Compact blade servers V-core, non V-core and VTT DC-DC
converters.
Optimized for high switching frequencies of up to 1 MHz.
Skip mode SMOD [low side gate turn off] input.
Desktop computers V-core, non V-core and VTT DC-DC
converters.
Fairchild SyncFETTM [integrated Schottky diode] technology
in the low side MOSFET.
Workstations V-core, non V-core and VTT DC-DC
converters.
Integrated bootstrap Schottky diode.
Adaptive gate drive timing for shoot-through protection.
Gaming Motherboards V-core, non V-core and VTT DC-DC
converters.
Driver output disable function [DISB# pin].
Gaming consoles.
Undervoltage lockout (UVLO).
High-current DC-DC Point of Load (POL) converters.
Fairchild Green Packaging and RoHS
compliant. Low profile SMD package.
Networking and telecom microprocessor voltage regulators.
Power Train Application Circuit
5V
CVDRV
CVCIN
12 V
CVIN
VDRV VCIN
DISB#
VIN
DISB#
PWM Input
OFF
ON
BOOT
PWM
SMOD#
CGND
CBOOT
PHASE
VSWH
OUTPUT
COUT
PGND
Figure 1. Power Train Application Circuit
Ordering Information
Part
Current Rating @ 350 kHz
[A]
Input Voltage Typical
[V]
Frequency Max
[kHz]
Device
Marking
FDMF6704
35
8-14
1000
FDMF6704
©2008 Fairchild Semiconductor Corporation
FDMF6704 Rev.D
1
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FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
September 2008
VCIN
VDRV
BOOT
HDRV
VIN
Q1
DISB#
Overlap
VSWH
Control
PWM
VDRV
SMOD#
Q2
CGND LDRV
PGND
Figure 2. Functional Block Diagram
SMOD#
VCIN
VDRV
BOOT
CGND
HDRV
PHASE
NC
VIN
VIN
Pin Configuration
1
PWM
DISB#
NC
CGND
LDRV
VSWH
VSWH
VSWH
VSWH
VSWH
10
40
11
(VIN)
(CGND)
(VSWH)
20
31
21
VSWH
VSWH
PGND
PGND
PGND
PGND
PGND
PGND
PGND
PGND
30
VIN
VIN
VIN
VIN
VSWH
PGND
PGND
PGND
PGND
PGND
Figure 3. 6mm x 6mm, 40L MLP Bottom View
FDMF6704 Rev. D
2
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FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
Functional Block Diagram
Pin
Name
1
SMOD#
2
VCIN
Function
When SMOD# = HI, low side driver is inverse of PWM input. When SMOD# = Low, low
side driver is disabled.
IC bias supply. Minimum 1 F ceramic capacitor is recommended from this pin to CGND.
3
VDRV
Power for low side driver. Minimum 1 F ceramic capacitor is recommended to be
connected as close as possible from this pin to CGND.
4
BOOT
Bootstrap supply input. Provides voltage supply to high-side MOSFET driver. Connect
bootstrap capacitor from this pin to PHASE.
5, 37
CGND
IC ground. Ground return for driver IC.
6
HDRV
For manufacturing test only. This pin must be floated. Must not be connected to any pin.
7
PHASE
Switch node pin for easy bootstrap capacitor routing. Electrically shorted to VSWH pin.
8, 38
NC
No connect.
9-14
VIN
Power input. Output stage supply voltage.
15, 29-35
VSWH
Switch node input. Provides return for high-side bootstrapped driver and acts as a
sense point for the adaptive shoot-thru protection.
16-28
PGND
Power ground. Output stage ground. Source pin of low side MOSFET(s).
36
LDRV
For manufacturing test only. This pin must be floated. Must not be connected to any pin.
39
DISB#
Output disable. When low, this pin disable FET switching (HDRV and LDRV are held low).
40
PWM
PWM Signal Input. This pin accepts a Tri-state logic-level PWM signal from the controller.
Absolute Maximum Rating
Parameter
Min
Max
Units
VCIN, VDRV, DISB#, PWM, SMOD#, LDRV to CGND
6
V
VIN to PGND, CGND
27
V
BOOT, HDRV to VSWH
6
V
BOOT, VSWH, HDRV to GND
27
V
BOOT to VDRV
22
V
IO(AV)
VIN = 12 V, VO = 1.3 V
fSW = 350 kHz
35
A
fSW = 1 MHz
32
A
IO(peak)
RθJPCB
Junction to PCB Thermal Resistance
Operating and Storage Junction Temperature Range
-55
80
A
3.75
°C/W
150
°C
Recommended Operating Range
Parameter
VCIN
VIN
Control Circuit Supply Voltage
Output Stage Supply Voltage
Min
Typ
Max
Units
4.5
5
5.5
V
12
14
V
8
*
* May be operated at lower input voltage. See figure 8.
FDMF6704 Rev. D
3
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FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
Pin Description
VIN = 12 V, TA = 25 °C unless otherwise noted.
Parameter
Operating Quiescent Current
Symbol
IQ
Conditions
Min
Typ
Max
PWM = GND
2
PWM = VCIN
2
Units
mA
VCIN UVLO
UVLO Threshold
3.0
UVLO COMP Hysteresis
3.2
3.4
V
0.2
V
10
k
PWM Input
Sink Impedance
Source Impedance
10
Tri-State Rising Threshold
VCIN = 5 V
3.2
VCIN = 5 V
1.2
Hysteresis
3.4
k
3.6
100
Tri-State Falling Threshold
1.4
V
mV
1.6
V
Hysteresis
100
mV
Tri-State Pin Open
2.5
V
Tri-State Shut Off Time
100
ns
SMOD# and DISB# Input
High Level Input Voltage
2
V
Low Level Input Voltage
Input Bias Current
-2
0.8
V
2
A
PWM = GND, delay between SMOD#
or DISB# from HI to LO to LDRV from
HI to LO.
15
ns
10 % to 90 %
25
ns
Fall Time
90 % to 10 %
20
ns
Deadband Time
tDTHH
LDRV going LO to HDRV going HI,
10 % to 10 %
25
ns
Propagation Delay
tPDHL
PMW going LO to HDRV going LO
10
ns
10 % to 90 %
25
ns
Fall Time
90 % to 10 %
20
ns
Deadband Time
tDTLH
VSWH going LO to LDRV going HI,
10 % to 10 %
20
ns
Propagation Delay
tPDLL
PWM going HI to LDRV going LO
10
ns
Delay between HDRV from HI to LO
and LDRV from LO to HI.
250
ns
Propagation Delay Time
High Side Driver
Rise Time
Low Side Driver
Rise Time
250 ns Time Out Circuit
250 ns Time Delay
FDMF6704 Rev. D
4
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FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
Electrical Characteristics
Circuit Description
SMOD
The FDMF6704 is a driver plus FET module optimized for
synchronous buck converter topology. A single PWM input
signal is all that is required to properly drive the high-side and
the low-side MOSFETs. Each part is capable of driving speeds
up to 1 MHz.
The SMOD (Skip Mode) function allows for higher converter
efficiency under light load conditions. During SMOD, the LS
FET is disabled and it prevents discharging of output caps.
When the SMOD# pin is pulled high, the sync buck converter
will work in synchronous mode. When the SMOD# pin is pulled
low, the LS FET is turned off. The SMOD function does not have
internal current sensing. This SMOD# pin is connected to a
PWM controller which enables or disables the SMOD
automatically when the controller detects light load condition.
Normally this pin is Active Low.
PWM
When the PWM input goes high, the high side MOSFET turns
on. When it goes low, the low side MOSFET turns on. When it is
open, both the low side and high side MOFET will turn off.
Adaptive Gate Drive Circuit
The DISB# input is combined with the PWM signal to control the
driver output. In a typical multiphase design, DISB# will be a
shared signal used to turn on all phases. The individual PWM
signals from the controller will be used to dynamically enable or
disable individual phases.
The driver IC embodies an advanced design that ensures
minimum MOSFET dead-time while eliminating potential
shoot-through (cross-conduction) currents. It senses the state of
the MOSFETs and adjusts the gate drive, adaptively, to ensure
they do not conduct simultaneously. Refer to Figure 4 for the
relevant timing waveforms.
Low-Side Driver
The low-side driver (LDRV) is designed to drive a ground
referenced low RDS(ON) N-channel MOSFET. The bias for LDRV
is internally connected between VDRV and CGND. When the
driver is enabled, the driver's output is 180° out of phase with
the PWM input. When the driver is disabled (DISB# = 0 V),
LDRV is held low.
To prevent overlap during the low-to-high switching transition
(Q2 OFF to Q1 ON), the adaptive circuitry monitors the voltage
at the LDRV pin. When the PWM signal goes HIGH, Q2 will
begin to turn OFF after some propagation delay (tPDLL). Once
the LDRV pin is discharged below 1 V, Q1 begins to turn ON
after adaptive delay tDTHH.
High-Side Driver
To preclude overlap during the high-to-low transition (Q1 OFF to
Q2 ON), the adaptive circuitry monitors the voltage at the
VSWH pin. When the PWM signal goes LOW, Q1 will begin to
turn OFF after some propagation delay (tPDHL). Once the
VSWH pin falls below 1 V, Q2 begins to turn ON after adaptive
delay tDTLH.
The high-side driver (HDRV) is designed to drive a floating
N-channel MOSFET. The bias voltage for the high-side driver is
developed by a bootstrap supply circuit, consisting of the
internal diode and external bootstrap capacitor (CBOOT). During
start-up, VSWH is held at PGND, allowing CBOOT to charge to
VDRV through the internal diode. When the PWM input goes
high, HDRV will begin to charge the high-side MOSFET's gate
(Q1). During this transition, charge is removed from CBOOT and
delivered to Q1's gate. As Q1 turns on, VSWH rises to VIN,
forcing the BOOT pin to VIN +VC(BOOT), which provides
sufficient VGS enhancement for Q1. To complete the switching
cycle, Q1 is turned off by pulling HDRV to VSWH. CBOOT is then
recharged to VDRV when VSWH falls to PGND. HDRV output is
in phase with the PWM input. When the driver is disabled, the
high-side gate is held low.
FDMF6704 Rev. D
Additionally, VGS of Q1 is monitored. When VGS(Q1) is
discharged low, a secondary adaptive delay is initiated, which
results in Q2 being driven ON after 250 ns, regardless of VSWH
state. This function is implemented to ensure CBOOT is
recharged each switching cycle, particularly for cases where the
power convertor is sinking current and VSWH voltage does not
fall below the 1 V adaptive threshold. The 250 ns secondary
delay is longer than tDTLH.
5
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FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
Description of Operation
FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
Tristate
PWM Input
tDTHH
tDTLH
90 %
1V
DrvL
DrvLLOW
HDRV to SW
Timeout
SW
1V
tPDHL
SW_Low
tPDLL
250 ns
Hold off Time
Figure 4. Adaptive Gate Drive Timing
FDMF6704 Rev. D
6
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VIN = 12V, VCIN = 5V, TA = 25°C unless otherwise noted.
35
12
30
10
8
PLOSS, W
ILOAD, A
25
VIN = 12 V
VOUT = 1.3 V
L = 440 nH
20
15
fSW = 1 MHz
6
4
10
VIN = 12 V
VOUT = 1.3 V
fSW = 1 MHz
L = 440 nH
5
fSW = 350 kHz
2
0
0
0
25
50
75
100
125
0
150
5
10
15
Figure 5. Safe Operating Area
1.40
PLOSS (NORMALIZED)
PLOSS (NORMALIZED)
1.12
1.00
1.10
1.08
1.06
1.04
VOUT = 1.3 V
IOUT = 30 A
L = 440 nH
fSW = 350 kHz
1.02
0.90
1.00
0.98
300
400
500
600
700
800
900
1000
6
8
10
fSW, kHz
1.07
1.30
1.04
PLOSS (NORMALIZED)
PLOSS (NORMALIZED)
1.40
1.01
0.98
VIN = 12 V
VOUT = 1.3 V
IOUT = 30 A
L = 440 nH
fSW = 350 kHz
4.8
16
VIN = 12 V
IOUT = 30 A
L = 440 nH
fSW = 350 kHz
1.20
1.10
1.00
0.90
5.1
5.4
5.7
0.80
0.8
6.0
Driver Supply Voltage, V
1.1
1.4
1.7
2.0
2.3
2.6
2.9
3.2
Output Voltage, V
Figure 9. Power Loss vs. Driver Supply Voltage
FDMF6704 Rev. D
14
Figure 8. Power Loss vs. Input Voltage
1.10
0.89
4.5
12
Input Voltage, V
Figure 7. Power Loss vs. Switching Frequency
0.92
35
1.14
1.10
0.95
30
1.16
1.20
0.80
200
25
Figure 6. Module Power Loss vs. Output Current
VIN = 12 V
VOUT = 1.3 V
IOUT = 30 A
L = 440 nH
1.30
20
ILOAD, A
o
PCB Temperature, C
Figure 10. Power Loss vs. Output Voltage
7
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FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
Typical Characteristics
VIN = 12V, VCIN = 5V, TA = 25°C unless otherwise noted.
1.045
45
1.040
40
Driver Supply Current, mA
PLOSS (NORMALIZED)
1.035
1.030
1.025
1.020
1.015
1.010
VIN = 12 V
VOUT = 1.3 V
IOUT = 30 A
fSW = 350 kHz
1.005
1.000
0.995
220
VCIN = 5 V
35
30
25
20
15
10
5
275
330
385
0
200
440
300
400
500
600
Figure 11. Power Loss vs. Output Inductance
800
900
1000
Figure 12. Driver Supply Current vs. Frequency
50
60
fSW = 1 MHz
49
55
Driver Supply Current, mA
Driver Supply Current, mA
700
fSW, kHz
Output Inductance, nH
50
45
40
35
VCIN = 5 V
fSW = 1 MHz
48
47
46
45
44
43
42
41
30
4.5
4.8
5.0
5.3
5.5
5.8
40
-50
6.0
-25
0
Driver Supply Voltage, V
PWM Tri-state Threshold Voltage, V
PWM Tri-state Threshold Voltage, V
5.0
4.0
3.5
3.0
TRI STATE
2.0
1.5
1.0
0.0
4.5
OFF STATE
5.0
5.5
4.5
125
150
6.0
VCIN = 5 V
ON STATE
4.0
3.5
3.0
2.5
TRI STATE
2.0
1.5
1.0
0.5
0.0
-40
OFF STATE
25
85
125
150
o
Driver Supply Voltage, V
Temperature, C
Figure 15. PWM Tri-state Threshold Voltage vs. Driver Supply
Voltage
FDMF6704 Rev. D
100
Figure 14. Driver Supply Current vs. Temperature
ON STATE
0.5
75
o
5.0
2.5
50
Temperature, C
Figure 13. Driver Supply Current vs. Drive Supply Voltage
4.5
25
Figure 16. PWM Tri-state Threshold Voltage vs. Temperature
8
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FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
Typical Characteristics
VIN = 12V, VCIN = 5V, TA = 25°C unless otherwise noted.
2.2
2.0
SMOD# Threshold Voltage, V
SMOD# Threshold Voltage, V
2.2
VIH
1.8
1.6
VIL
1.4
1.2
4.8
5.0
5.3
5.5
5.8
2.0
VIH
1.8
1.6
VIL
1.4
1.2
1.0
-50
1.0
4.5
VCIN = 5 V
6.0
-25
0
25
50
75
100
125
150
o
Driver Supply Voltage, V
Temperature, C
Figure 17. SMOD# Threshold Voltage vs. Driver Supply Voltage
Figure 18. SMOD# Threshold Voltage vs. Temperature
2.2
2.2
2.0
2.0
DISB# Threshold Voltage, V
DISB# Threshold Voltage, V
VCIN = 5 V
VIH
1.8
1.6
VIL
1.4
1.2
1.0
4.5
4.8
5.0
5.3
5.5
5.8
1.6
VIL
1.4
1.2
1.0
-50
6.0
Driver Supply Voltage, V
-25
0
25
50
75
100
125
150
o
Temperature, C
Figure 19. DISB# Threshold Voltage vs. Driver Supply Voltage
FDMF6704 Rev. D
VIH
1.8
Figure 20. DISB# Threshold Voltage vs. Temperature
9
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FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
Typical Characteristics
Supply Capacitor Selection
VCIN Filter
For the supply input (VCIN) of the FDMF6704, a local ceramic
bypass capacitor is recommended to reduce the noise and to
supply the peak current. Use at least a 1 F, X7R or X5R
capacitor. Keep this capacitor close to the FDMF6704 VCIN and
PGND pins.
The VDRV pin provides power to the gate drive of the high side
and low side power FET. In most cases, it can be connected
directly to VCIN, the pin that provides power to the logic section
of the driver. For additional noise immunity, an RC filter can be
inserted between VDRV and VCIN. Recommended values would
be 10 Ohms and 1 F.
Bootstrap Circuit
The bootstrap circuit uses a charge storage capacitor (CBOOT),
as shown in Figure 21. A bootstrap capacitance of 100nF, X7R
or X5R capacitor is adequate.
Typical Application
VIN 12V
V5V 5V
VDRV
PWM
DISB#
SMOD#
VIN
CGND
VCIN
BOOT
PHASE
VSWH
CBOOT
PGND
FDMF6704
VCC
EN
SMOD#
PWM1
PWM
Controller
PWM2
VDRV
PWM
DISB#
SMOD#
VIN
CGND
VCIN
BOOT
PHASE
VSWH
CBOOT
PGND
FDMF6704
VOUT
PWM3
PWM4
CGND
Signal
GND
Power
GND
VDRV
PWM
DISB#
SMOD#
VIN
CGND
VCIN
BOOT
PHASE
VSWH
CBOOT
PGND
FDMF6704
VDRV
PWM
DISB#
SMOD#
VIN
CGND
VCIN
BOOT
PHASE
VSWH
CBOOT
PGND
FDMF6704
Figure 21. Typical Application
FDMF6704 Rev. D
10
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FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
Application Information
also be wide enough for high current flow. Other signal routing
path, such as PWM IN and BOOT signal, should be considered
with care to avoid noise pickup from VSWH copper area.
Refer to Figure 22 for module power loss testing method. Power
loss calculation are as follows:
3. Output inductor location should be as close as possible to the
FDMF6704 for lower power loss due to copper trace.
(a) PIN
= (VIN x IIN) + (V5V x I5V) (W)
(b) POUT
= VO x IOUT (W)
= PIN - POUT (W)
(c) PLOSS
(d) Efficiency = 100 x POUT/PIN (%)
4. The PowerTrench® 5 MOSFETs used in the output stage are
very effective at minimizing ringing. In most cases, no snubber
will be required. If a snubber is used, it should be placed near
the FDMF6704. The resistor and capacitor need to be of proper
size for power dissipation.
PCB Layout Guideline
5. Place ceramic bypass capacitor and boot capacitor as close
to VCIN and BOOT pin of FDMF6704 in order to supply stable
power. Routing width and length should also be considered.
Figure 23 shows a proper layout example of FDMF6704 and
critical parts. All of high current flow path, such as VIN, VSWH,
VOUT and GND copper, should be short and wide for better and
stable current flow, heat radiation and system performance.
6. Ringing at the Boot pin is most effectively controlled by close
placement of the capacitor. Do not add an additional Boot to
PGND capacitor. This may lead to excess current flow through
the Boot diode.
Following is a guideline which the PCB designer should
consider:
7. Use multiple Vias on each copper area to interconnect each
top, inner and bottom layer to help smooth current flow and heat
conduction. Vias should be relatively large and of reasonable
inductance.
1. Input bypass capacitors should be close to VIN and PGND pin
of FDMF6704 to help reduce input current ripple component
induced by switching operation.
2. It is critical that the VSWH copper has minimum area for
lower switching noise emission. VSWH copper trace should
V5V
A
I5V
CVCIN
CVDRV
IIN
A
VIN
CVIN
VDRV VCIN
DISB#
PWM Input
SMOD#
DISB#
VIN
BOOT
PWM
CBOOT
PHASE
VSWH
SMOD#
CGND
PGND
IOUT
V
VO
A
VOUT
COUT
Figure 22. Power Loss Measurement Block Diagram
Figure 23. Typical PCB Layout Example (Top View)
FDMF6704 Rev. D
11
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FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
Module Power Loss and Efficiency
Measurement and Calculation
FDMF6704 High Frequency, High Efficiency, Ultra Compact DrMOS Module
Dimensional Outline and Pad layout
FDMF6704 Rev. D
12
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their parts.
Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed applications,
and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of
counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are
listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have
full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical and product information.
Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise. Fairchild will not provide
any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our
customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The
datasheet is for reference information only.
Rev. I36
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com