KSD401 KSD401 TV Vertical Deflection Output • • • • Collector-Base Voltage : VCBO=200V Collector Current : IC=2A Collector Dissipation : PC=25W(TC=25°C) Complement to KSB546 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage Value 200 Units V 150 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current 2 A PC Collector Dissipation (TC=25°C) 25 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCBO Parameter Collector-Base Breakdown Voltage Test Condition IC = 500uA, IE = 0 Min. 200 Typ. Max. BVCEO Collector-Emitter Breakdown Voltage IC = 10mA, IB = 0 150 V BVEBO Emitter-Base Breakdown Voltage IE = -500uA, IC = 0 5 V ICBO Collector Cut-off Current VCB = 150V, IE = 0 hFE DC Current Gain VCE = 10V, IC = 0.4A VCE(sat) Collector-Emitter Saturation Voltage IC = 500mA, IB = 50mA fT Current Gain Bandwidth Product VCE = 10V, IC = 0.4A 50 120 Units V µA 400 1 5 V MHz hFE Classification Classification Y G hFE 120 ~ 240 200 ~ 400 ©2004 Fairchild Semiconductor Corporation Rev. B, February 2004 KSD401 Typical Characteristics 1000 1.0 VCE = 10V IB = 8mA 0.8 IB = 7mA 0.7 hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 0.9 IB = 6mA 0.6 IB = 5mA 0.5 IB = 4mA 0.4 IB = 3mA 0.3 IB = 2mA 0.2 100 IB = 1mA 0.1 10 0.01 0.0 0 5 10 15 20 25 30 35 40 45 50 0.1 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC current Gain 10 1000 IC = 10 IB Cob[pF], CAPACITANCE VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic V BE(sat) 1 0.1 VCE (sat) 0.01 0.01 0.1 1 100 10 10 1 10 100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 40 10 1. Tc=25℃ 2. *single pulse 35 *1ms Thermal limitation S/B limitation 1 S/B limitation PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 1 30 25 20 15 10 5 0 0.1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2004 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. B, February 2004 KSD401 Package Dimensions TO-220 4.50 ±0.20 2.80 ±0.10 (3.00) +0.10 1.30 –0.05 18.95MAX. (3.70) ø3.60 ±0.10 15.90 ±0.20 1.30 ±0.10 (8.70) (1.46) 9.20 ±0.20 (1.70) 9.90 ±0.20 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ±0.20] 10.08 ±0.30 (1.00) 13.08 ±0.20 ) (45° 1.27 ±0.10 +0.10 0.50 –0.05 2.40 ±0.20 2.54TYP [2.54 ±0.20] 10.00 ±0.20 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B, February 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FPS™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ EnSigna™ I2C™ ImpliedDisconnect™ FACT™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I7