SSM03N70GH/GJ
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
D
Repetitive Avalanche Rated
Fast Switching Speed
Simple Drive Requirement
G
BVDSS
600V
RDS(ON)
3.6Ω
ID
3.3A
S
DESCRIPTION
G D
The TO-252 package is universally preferred for all commercialIndustrial surface mount applications and suited for AC/DC converters.
The through-hole version (SSM03N70GH/GJ) is available for low-profile
applications.
G
RoHS-compliant
TO-252(H)
S
D S
TO-251(J)
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Units
VDS
Drain-Source Voltage
V
VGS
Gate-Source Voltage
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
A
±30
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
V
13.2
A
45
W
0.36
W/℃
85
mJ
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
3.3
A
EAR
Repetitive Avalanche Energy
3.3
mJ
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
THERMAL DATA
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.8
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
09/06/2007 Rev.1.00
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1
SSM03N70GH/GJ
ELECTRICAL CHARACTERISTICS
@ TJ=25oC ( unless otherwise specified )
Symbol
Parameter
Test Conditions
Typ.
Max. Units
600
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.6
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=1.6A
-
-
3.6
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.6A
-
2
-
S
VDS=600V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150 C)
VDS=480V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=3.3A
-
11.4
-
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
VGS=0V, ID=250uA
Min.
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=480V
-
3.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.2
-
nC
3
td(on)
Turn-on Delay Time
VDD=300V
-
8.4
-
ns
tr
Rise Time
ID=3.3A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
17.7
-
ns
tf
Fall Time
RD=91Ω
-
5.9
-
ns
Ciss
Input Capacitance
VGS=0V
-
600
-
pF
Coss
Output Capacitance
VDS=25V
-
45
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Min.
Typ.
IS=3A, VGS=0V
-
-
1.5
V
SOURCE-DRAIN DIODE
Symbol
VSD
Parameter
Forward On Voltage
3
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
422
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
2580
-
nC
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=15mH , RG=25Ω , IAS=3A.
3.Pulse width <300us , duty cycle <2%.
09/06/2007 Rev.1.00
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SSM03N70GH/GJ
4
10V
6.0V
o
T C =25 C
o
T C =150 C
2
10V
5.0V
ID , Drain Current (A)
ID , Drain Current (A)
3
2
5.0V
1
2
4.5V
1
4.0V
1
4.5V
V G =4.0V
V G =3.5V
0
0
0
5
10
15
20
25
0
5
Fig 1. Typical Output Characteristics
15
20
25
Fig 2. Typical Output Characteristics
1.2
2.5
I D =1.6A
V G =10V
2.1
1.1
Normalized RDS(ON)
Normalized BVDSS (V)
10
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1.0
1.7
1.3
0.9
0.9
0.5
0.1
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C)
T j , Junction Temperature ( o C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
100
5
4
1
T j = 150 o C
VGS(th) (V)
IS (A)
10
T j = 25 o C
3
2
0.1
1
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
-50
Fig 5. Forward Characteristic of
Reverse Diode
09/06/2007 Rev.1.00
0
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
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SSM03N70GH/GJ
f=1.0MHz
16
10000
I D =3.3A
V DS =480V
12
C iss
10
C (pF)
VGS , Gate to Source Voltage (V)
14
8
100
C oss
6
4
C rss
2
1
0
1
0
4
8
12
5
9
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
10
10us
ID (A)
13
16
100us
1
1ms
10ms
0.1
T c =25 o C
Single Plude
100ms
0.01
DUTY=0.5
0.2
0.1
0.05
0.1
0.02
PDM
0.01
t
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
0.01
1
10
100
1000
10000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Charge
Fig 11. Switching Time Waveform
09/06/2007 Rev.1.00
Q
Fig 12. Gate Charge Waveform
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SSM03N70GH/GJ
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
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responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
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without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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