SSM9972GP,S
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge
D
Simple drive requirement
BV DSS
60V
R DS(ON)
18mΩ
Fast switching
60A
ID
G
S
Description
G D
The SSM9972GS is in a TO-263 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM9972GP in TO-220, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
G
Pb-free lead finish (second-level interconnect)
D
S
TO-263 (S)
TO-220(P)
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
3
Rating
Units
60
V
±25
V
ID @ TC=25°C
Continuous Drain Current, VGS @ 10V
60
A
ID @ TC=100°C
Continuous Drain Current, VGS @ 10V
38
A
230
A
1
IDM
Pulsed Drain Current
PD @ TC=25°C
Total Power Dissipation
89
W
Linear Derating Factor
0.7
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
1.4
°C/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
62
°C/W
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SSM9972GP,S
Electrical Characteristics @ T j=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
60
-
-
V
-
0.06
-
V/°C
VGS=10V, ID=35A
-
-
18
mΩ
VGS=4.5V, ID=25A
-
-
22
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=35A
-
55
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=150oC)
VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±25V
-
-
±100
nA
ID=35A
-
32
51
nC
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/ ∆ Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=250uA
2
Max. Units
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
20
-
nC
VDS=30V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=35A
-
58
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
45
-
ns
tf
Fall Time
RD=0.86Ω
-
80
-
ns
Ciss
Input Capacitance
VGS=0V
-
3170 5070
pF
Coss
Output Capacitance
VDS=25V
-
280
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
230
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.7
-
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=35A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=35A, VGS=0V,
-
50
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
48
-
nC
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/16/2005 Rev.1.1
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SSM9972GP,S
200
150
10V
7.0V
150
ID , Drain Current (A)
ID , Drain Current (A)
10V
7.0V
5.0V
100
4.5V
5.0V
100
4.5V
50
50
V G =3.0V
o
T C = 150 C
V G =3.0V
o
T C =25 C
0
0
0
2
4
6
8
10
12
0
14
2
4
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.6
20
I D = 25 A
T C =25 o C
I D =35A
V G =10V
Normalized RDS(ON)
1.4
RDS(ON) (mΩ )
18
16
1.2
1.0
0.8
14
0.6
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
20
1.7
IS(A)
T j =150 o C
Normalized VGS(th) (V)
15
T j =25 o C
10
1.2
0.7
5
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
-50
0
Fig 5. Forward Characteristic offf
Reverse Diode
2/16/2005 Rev.1.1
50
100
150
T j , Junction Temperature ( o C)
V SD , Source-to-Drain Voltage (V)
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM9972GP,S
f=1.0MHz
12
10000
VGS , Gate to Source Voltage (V)
I D = 35 A
10
C iss
V DS =48V
V DS =38V
V DS =30V
C (pF)
8
6
1000
4
C oss
C rss
2
0
100
0
20
40
1
60
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (R thjc)
1000
100
ID (A)
100us
1ms
10ms
10
o
T C =25 C
Single Pulse
100ms
DC
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
VG
V DS =5V
ID , Drain Current (A)
80
T j =25 o C
QG
T j =150 o C
4.5V
60
QGS
QGD
40
20
Charge
Q
0
0
2
4
6
8
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
2/16/2005 Rev.1.1
Fig 12. Gate Charge Waveform
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SSM9972GP,S
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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