SSM2030GM
N- and P-channel Enhancement-mode Power MOSFETs
Simple drive requirement
Lower gate charge
Fast switching characteristics
N-CH BV DSS
D2
D2
D1 D2
D1 D1
D1
Pb-free; RoHS compliant.
SO-8
G2
G2
S2
G1 S2
S1 G1
S1
20V
R DS(ON)
30mΩ
ID
6A
P-CH BVDSS
DESCRIPTION
-20V
RDS(ON)
50mΩ
ID
-5A
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
D2
D1
G2
G1
The SSM2030GM is in an SO-8 package, which is widely preferred
for commercial and industrial surface mount applications. This device is
suitable for low voltage applications requiring complementary N and P MOSFETs.
S1
S2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
I D @ TA=25°C
ID @ TA=70°C
Units
P-channel
20
-20
V
±8
±8
V
3
+6
-5
A
3
+4.8
-4
A
+20
-20
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
PD @ TA=25°C
Total Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 150
°C
THERMAL DATA
Symbol
Rthj-amb
2/10/2005 Rev.2.01
Parameter
Thermal Resistance Junction-ambient
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Max.
Value
Unit
62.5
°C/W
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SSM2030GM
N-channel ELECTRICAL CHARACTERISTICS @ Tj = 25o C
Symbol
Parameter
Test Conditions
(unless otherwise specified)
Min.
Typ.
Max. Units
20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/ ∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
-
0.037
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=6A
-
-
30
mΩ
VGS=2.5V, ID=5.2A
-
-
45
mΩ
VDS=VGS, ID=250uA
0.5
-
1.2
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=250uA
VDS=10V, ID=6A
-
18.5
-
S
o
VDS=20V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=16V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±8V
-
-
±100
nA
ID=6A
-
9
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=10V
-
1.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
4.2
-
nC
VDS=10V
-
-
29
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
-
65
ns
td(off)
Turn-off Delay Time
RG=6Ω, VGS=4.5V
-
-
60
ns
tf
Fall Time
RD=10Ω
-
-
50
ns
Ciss
Input Capacitance
VGS=0V
-
300
-
pF
Coss
Output Capacitance
VDS=8V
-
255
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
115
-
pF
Min.
Typ.
-
-
1.7
A
-
-
20
A
-
0.75
1.2
V
SOURCE-DRAIN DIODE
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
Tj=25°C, IS=1.7A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10sec.
2/10/2005 Rev.2.01
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SSM2030GM
o
P-channel ELECTRICAL CHARACTERISTICS @ Tj = 25 C
Symbol
Parameter
(unless otherwise specified)
Test Conditions
Min.
Typ.
Max. Units
-20
-
-
V
BVDSS
Drain-Source Breakdown Voltage
∆ BV DSS/∆Tj
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
-
-0.037
-
V/°C
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2.2A
-
-
50
mΩ
VGS=-2.5V, ID=-1.8A
-
-
80
mΩ
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.5
-
-1
V
gfs
Forward Transconductance
VDS=-10V, ID=-2.2A
-
2.5
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=-20V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=-16V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 8V
-
-
±100
nA
VGS(th)
IGSS
VGS=0V, ID=250uA
2
Qg
Total Gate Charge
ID=-2.2A
-
11.5
-
nC
Qgs
Gate-Source Charge
VDS=-6V
-
3.2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
1.5
-
nC
VDS=-10V
-
-
10
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-2.2A
-
-
25
ns
td(off)
Turn-off Delay Time
RG=6Ω ,VGS=-4.5V
-
-
50
ns
tf
Fall Time
RD=4.5Ω
-
-
30
ns
Ciss
Input Capacitance
VGS=0V
-
940
-
pF
Coss
Output Capacitance
VDS=-15V
-
440
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
130
-
pF
Min.
Typ.
-
-
-1.8
A
-
-
-20
A
-
-0.75
-1.2
V
SOURCE-DRAIN DIODE
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=-1.2V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
2
Forward On Voltage
Tj=25°C, IS=-1.8A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10sec.
2/10/2005 Rev.2.01
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SSM2030GM
N-channel
25
25
o
T C =25 C
V G =4.5V
V G =4.5V
20
V G =3.5V
V G =3.0V
ID , Drain Current (A)
ID , Drain Current (A)
20
T C =150 o C
15
V G =2.5V
10
V G =3.5V
V G =3.0V
15
V G =2.5V
10
V G =2.0V
V G =2.0V
5
5
0
0
0
1
2
3
4
5
6
0
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
6
1.8
Id=6A
T c =25°C
I D =6A
V G =4.5V
1.6
Normalized RDS(ON)
40
35
RDSON (mΩ )
1
V DS , Drain-to-Source Voltage (V)
30
1.4
1.2
1.0
25
0.8
0.6
20
2
3
4
5
-50
0
Fig 3. On-Resistance vs. Gate Voltage
2/10/2005 Rev.2.01
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 4. Normalized On-Resistance
vs. Junction Temperature
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SSM2030GM
N-channel
3
8
7
6
ID , Drain Current (A)
2
PD (W)
5
4
3
1
2
1
0
0
25
50
75
100
125
0
150
50
100
150
T c ,Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current vs.
Case Temperature
Fig 6. Typical Power Dissipation
1
100
Normalized Thermal Response (Rthja)
DUTY=0.5
1ms
10
ID (A)
10ms
100ms
0.2
0.1
0.1
0.05
0.02
0.01
P DM
0.01
1
10us
T c =25 o C
Single Pulse
t
T
SINGLE PULSE
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.001
0.1
0.1
1
10
100
0.0001
0.001
Fig 7. Maximum Safe Operating Area
2/10/2005 Rev.2.01
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
V DS (V)
Fig 8. Effective Transient Thermal Impedance
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SSM2030GM
N-channel
6
I D =6A
V DS =10V
5
Ciss
4
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
3
Coss
100
Crss
2
1
0
0
2
4
6
8
10
10
12
1
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1.5
100.00
10.00
1
T j =25 o C
VGS(th) (V)
IS(A)
T j =150 o C
1.00
0.5
0.10
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
-50
0
Fig 11. Forward Characteristic of
Reverse Diode
2/10/2005 Rev.2.01
50
100
150
T j ,Junction Temperature ( o C)
V SD (V)
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
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6 of 11
SSM2030GM
N-channel
VDS
90%
RD
VDS
D
0.5x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
10%
VGS
S
+
VGS
4..5V
-
td(on)
Fig 13. Switching Time Circuit
td(off)
tr
tf
Fig 14. Switching Time Waveform
VG
VDS
D
4.5V
0.5 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
+
1~ 3 mA
I
G
I
D
Charge
Fig 15. Gate Charge Circuit
2/10/2005 Rev.2.01
Q
Fig 16. Gate Charge Waveform
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7 of 11
SSM2030GM
P-channel
25
25
o
T C =25 C
T C =150 o C
V G =-4.5V
V G =-4.0V
20
V G =-4.5V
V G =-4.0V
20
15
-ID , Drain Current (A)
-ID , Drain Current (A)
V G =-3.5V
V G =-3.5V
V G =-3.0V
10
V G =-2.5V
15
V G =-3.0V
10
V G =-2.5V
5
5
0
0
0
1
2
3
4
5
0
6
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
100
Id=-2.2A
T c =25°C
90
I D =-2.2A
V G = -4.5V
1.6
Normalized RDS(ON)
RDSON (mΩ )
80
70
60
1.4
1.2
1
50
0.8
40
0.6
30
-50
2
3
4
0
100
150
o
-V GS (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance vs. Gate Voltage
2/10/2005 Rev.2.01
50
5
Fig 4. Normalized On-Resistance
vs. Junction Temperature
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8 of 11
SSM2030GM
6
3
5
2.5
4
2
PD (W)
-ID , Drain Current (A)
P-channel
3
1.5
2
1
1
0.5
0
0
25
50
75
100
125
0
150
50
100
150
T c ,Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current vs.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
Normalized Thermal Response (R thja)
DUTY=0.5
1ms
10
-ID (A)
10ms
100ms
1
1s
T c =25 o C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
SINGLE PULSE
Duty factor = t/T
Peak Tj = P DM x Rthja + Ta
0.001
0.1
0.1
1
10
100
0.0001
0.001
Fig 7. Maximum Safe Operating Area
2/10/2005 Rev.2.01
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
-V DS (V)
Fig 8. Effective Transient Thermal Impedance
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9 of 11
SSM2030GM
P-channel
6
I D =-2.2A
V DS =-6V
5
4
1000
Ciss
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
3
Coss
2
Crss
100
1
0
10
0
2
4
6
8
10
12
14
1
5
9
13
17
21
25
29
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
1
100.00
0.8
10.00
0.6
T j =25 o C
-VGS(th) (V)
-IS(A)
T j =150 o C
1.00
0.4
0.10
0.2
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
-50
0
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
2/10/2005 Rev.2.01
50
100
150
T j ,Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
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10 of 11
SSM2030GM
P-channel
VDS
90%
RD
VDS
D
RG
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
G
10%
S
-4.5 V
VGS
VGS
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
D
-4.5V
0.3 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
-1~-3mA
I
G
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
2/10/2005 Rev.2.01
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