AP9985M
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low On-Resistance
D
D
▼ Fast Switching Speed
D
D
▼ Surface Mount Package
S
40V
RDS(ON)
15mΩ
ID
G
SO-8
BVDSS
10A
S
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
40
V
± 20
V
Continuous Drain Current
3
10
A
Continuous Drain Current
3
8
A
48
A
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
50
℃/W
200120031
AP9985M
Electrical Characteristics@T j=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
40
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.032
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=10A
-
-
15
mΩ
VGS=4.5V, ID=5A
-
-
25
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=250uA
VDS=10V, ID=10A
-
35
-
S
o
VDS=40V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=32V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=10A
-
14.7
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
7.1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6.8
-
nC
VDS=20V
-
11.5
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
6.3
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
28.2
-
ns
tf
Fall Time
RD=20Ω
-
12.6
-
ns
Ciss
Input Capacitance
VGS=0V
-
1725
-
pF
Coss
Output Capacitance
VDS=25V
-
235
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
145
-
pF
Min.
Typ.
-
-
2.3
A
-
-
25
A
-
-
1.3
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Continuous Source Current ( Body Diode )
1
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10 sec.
Tj=25℃, IS=2.3A, VGS=0V
Max. Units
AP9985M
50
45
10V
6.0V
5.0V
o
T C =25 C
10V
6.0V
5.0V
4.5V
T C =150 o C
40
ID , Drain Current (A)
ID , Drain Current (A)
4.5V
30
20
V GS =4.0V
30
V GS =4.0V
15
10
0
0
0
1
2
3
0
4
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
80
I D =10A
T C =25 ℃
I D =10A
V GS =10V
Normalized RDS(ON)
RDS(ON) (mΩ )
60
40
1.4
0.8
20
0
0.2
2
4
6
8
10
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
12
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
150
AP9985M
12
3
ID , Drain Current (A)
10
8
PD (W)
2
6
4
1
2
0
0
25
50
75
100
125
150
0
50
T c , Case Temperature ( o C)
100
150
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
100us
ID (A)
1ms
10ms
1
100ms
1s
0.1
10s
Normalized Thermal Response (R thja)
10
Duty Factor = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t
0.01
T
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
T C =25 o C
Single Pulse
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
AP9985M
f=1.0MHz
12
10000
VGS , Gate to Source Voltage (V)
I D =10A
Ciss
9
V DS =12V
V DS =16V
VDS =20V
C (pF)
1000
6
Coss
Crss
100
3
0
10
0
5
10
15
20
25
1
7
13
19
25
31
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3.5
100
3
10
2.5
Tj=25 o C
VGS(th) (V)
IS(A)
Tj=150 o C
1
2
1.5
0.1
1
0.5
0.01
0
0.4
0.8
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
o
T j , Junction Temperature ( C )
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
150
AP9985M
VDS
90%
RD
VDS
D
0.5 x RATED V DS
G
RG
TO THE
OSCILLOSCOPE
+
10%
VGS
S
10 v
VGS
-
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
D
4.5V
0.5 x RATED V DS
G
S
QG
TO THE
OSCILLOSCOPE
QGS
QGD
VGS
+
1~ 3 mA
IG
I
D
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Q