SSM4920M
N-CHANNEL ENHANCEMENT-MODE
POWER MOSFET
Simple Drive Requirement
D2
D2
Low On-resistance
D1
D1
Fast Switching
BV DSS
25V
R DS(ON)
25mΩ
7A
ID
G2
S2
SO-8
S1
G1
Description
D2
D1
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
G2
G1
S1
S2
The SO-8 package is widely preferred for all commercial and
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
25
V
± 20
V
3
7
A
3
5.7
A
Continuous Drain Current
Continuous Drain Current
1,4
IDM
Pulsed Drain Current
20
A
PD@TA=25℃
Total Power Dissipation
2
W
Linear Derating Factor
0.016
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Rev.2.01 6/26/2003
Parameter
Thermal Resistance Junction-ambient
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Max.
Value
Unit
62.5
℃/W
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SSM4920M
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
RDS(ON)
25
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.037
-
V/℃
Static Drain-Source On-Resistance
VGS=10V, ID=7A
-
-
25
mΩ
VGS=4.5V, ID=5.2A
-
-
35
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VDS=10V, ID=7A
-
14
-
S
o
VDS=25V, VGS=0V
-
-
1
uA
o
Drain-Source Leakage Current (Tj=55 C)
VDS=20V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
ID=7A
-
10.5
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
VGS=0V, ID=250uA
Min. Typ. Max. Units
2
±100 nA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=15V
-
1.9
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7.5
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
9.5
-
ns
td(off)
Turn-off Delay Time
RG=6Ω,VGS=10V
-
25
-
ns
tf
Fall Time
RD=15Ω
-
13.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
395
-
pF
Coss
Output Capacitance
VDS=25V
-
260
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
105
-
pF
Source-Drain Diode
Symbol
Parameter
IS
Continuous Source Current ( Body Diode )
ISM
Pulsed Source Current ( Body Diode ) 1
VSD
2
Forward On Voltage
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25℃, IS=2.1A, VGS=0V
Min. Typ. Max. Units
-
-
2.1
A
-
-
20
A
-
0.8
1.2
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t<10sec.
4.Pulse width <10us , duty cycle <1%.
Rev.2.01 6/26/2003
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SSM4920M
20
20
T C =25 o C
T C =150 o C
V G =10V
V G =10V
V G =8.0V
V G =8.0V
15
V G =6.0V
ID , Drain Current (A)
ID , Drain Current (A)
15
V G =5.0V
V G =4.0V
10
V G =6.0V
V G =5.0V
V G =4.0V
10
5
5
0
0
0
1
2
3
4
5
6
0
7
1
2
3
4
5
6
7
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
50
1.8
Id=7A
T c =25 ℃
I D =7A
V G =10V
1.6
Normalized RDS(ON)
RDSON (mΩ )
40
30
1.4
1.2
1.0
20
0.8
10
0.6
3
4
5
6
7
8
9
10
11
-50
Fig 3. On-Resistance v.s. Gate Voltage
Rev.2.01 6/26/2003
0
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
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SSM4920M
3
8
7
6
ID , Drain Current (A)
2
PD (W)
5
4
3
1
2
1
0
0
25
50
75
100
125
0
150
50
100
150
T c ,Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Fig 6. Typical Power Dissipation
Case Temperature
1
100
10
Normalized Thermal Response (Rthja)
DUTY=0.5
1ms
ID (A)
10ms
100ms
1
0.1
0.1
0.05
0.02
0.01
P DM
0.01
1s
T c =25 o C
Single Pulsee
0.2
t
T
SINGLE PULSE
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.001
0.1
0.1
Rev.2.01 6/26/2003
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
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SSM4920M
12
I D =7A
V DS =15V
10
8
1000
Ciss
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
10000
6
4
Coss
100
Crss
2
0
10
0
2
4
6
8
10
12
14
16
18
1
20
5
9
13
17
21
25
29
V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3
100.00
2.5
10.00
2
VGS(th) (V)
IS(A)
T j =150 o C
T j =25 o C
1.00
1.5
1
0.10
0.5
0.01
0
0.1
0.3
0.5
0.7
0.9
1.1
1.3
Fig 11. Forward Characteristic of
Rev.2.01 6/26/2003
-50
0
50
100
150
T j ,Junction Temperature ( o C)
V SD (V)
Reverse Diode
1.5
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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SSM4920M
VDS
90%
RD
VDS
D
0.6x RATED VDS
G
RG
TO THE
OSCILLOSCOPE
10%
VGS
S
+
VGS
10V
-
td(on)
Fig 13. Switching Time Circuit
tr
td(off) tf
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
4.5V
0.6 x RATED VDS
QGS
G
S
QGD
VGS
+
1~ 3 mA
I
G
I
D
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.01 6/26/2003
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