SSM2303N
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
Small package outline
D
Surface-mount device
BVDSS
-30V
R DS(ON)
240mΩ
- 1.7A
ID
S
SOT-23
Description
G
D
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID @ TA=25°C
ID @ TA=70°C
Rating
Units
- 30
V
± 20
V
3
-1.7
A
3
-1.4
A
Continuous Drain Current
Continuous Drain Current
1,2
IDM
Pulsed Drain Current
-10
A
PD @ TA=25°C
Total Power Dissipation
1.25
W
Linear Derating Factor
0.01
W/°C
TSTG
Storage Temperature Range
-55 to 150
°C
TJ
Operating Junction Temperature Range
-55 to 1 50
°C
Thermal Data
Symbol
Rthj-amb
Rev.2.02 3/16/2004
Parameter
Thermal Resistance Junction-ambient
3
Max.
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Value
Unit
100
°C/W
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SSM2303N
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol
BVDSS
∆ BV DSS/ ∆ T
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=-1mA
-
-0.1
-
V/°C
Static Drain-Source On-Resistance
VGS=-10V, ID=-1.7A
-
-
240
mΩ
VGS=-4.5V, ID=-1.3A
-
-
460
mΩ
VDS=VGS, ID=-250uA
-1
-
-
V
Drain-Source Breakdown Voltage
j
RDS(ON)
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=-250uA
VDS=-10V, ID=-1.7A
-
2
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=55 C)
VDS=-30V, VGS=0V
-
-
-10
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=-1.7A
-
6.2
-
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-15V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
0.3
-
nC
VDS=-15V
-
20
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=6Ω ,VGS=-10V
-
35
-
ns
tf
Fall Time
RD=6Ω
-
20
-
ns
Ciss
Input Capacitance
VGS=0V
-
230
-
pF
Coss
Output Capacitance
VDS=-15V
-
130.4
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Min.
Typ.
-
-
-1.25
A
-
-
-10
A
-
-
-1.2
V
Source-Drain Diode
Symbol
IS
ISM
VSD
Parameter
Test Conditions
VD=VG=0V , VS=-1.2V
Continuous Source Current ( Body Diode )
Pulsed Source Current ( Body Diode )
1
2
Forward On Voltage
IS=-1.25A, VGS=0V
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on FR4 board, t < 5 sec.
Rev.2.02 3/16/2004
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SSM2303N
10
10
-10V
-8.0V
-6.0V
o
T C =25 C
T C =150 o C
-10V
-8.0V
-6.0V
8
8
-ID , Drain Current (A)
-ID , Drain Current (A)
-5.0V
6
4
V GS =-4.0V
-5.0V
6
4
V GS =-4.0V
2
2
0
0
0
2
4
0
6
2
4
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
250
I D =-1.7A
I D =-1.7A
T C =25 ℃
V GS = -10V
1.6
RDS(ON) (mΩ )
Normalized RDS(ON)
200
150
1.4
1.2
1
0.8
0.6
100
3
4
5
6
7
8
9
10
11
-50
0
100
150
o
T j , Junction Temperature ( C)
-V GS (V)
Fig 3. On-Resistance vs. Gate Voltage
Rev.2.04 3/16/2004
50
Fig 4. Normalized On-Resistance
vs. Junction Temperature
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2
2
1.5
1.5
PD (W)
-ID , Drain Current (A)
SSM2303N
1
1
0.5
0.5
0
0
25
50
75
100
125
0
150
50
100
150
T c ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current vs.
Case Temperature
Fig 6. Typical Power Dissipation
1
100
Normalized Thermal Response (R thja)
Duty Factor = 0.5
-ID (A)
10
1ms
1
10ms
o
T c =25 C
Single Pulse
0.1
0.1
PDM
0.05
t
Single Pulse
Duty Factor = t/T
Peak Tj = P DM x Rthja + Ta
0.02
1s
1
10
100
0.01
0.0001
0.001
-V DS (V)
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Rev.2.02 3/16/2004
T
100ms
0.1
0.1
0.2
Fig 8. Effective Transient Thermal Impedance
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SSM2303N
14
I D = -1.7A
V DS = -15V
12
Ciss
10
8
C (pF)
-VGS , Gate to Source Voltage (V)
f=1.0MHz
1000
6
Coss
100
Crss
4
2
0
10
0
1
2
3
4
5
6
7
8
1
8
15
22
29
-V DS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100
2.4
10
1.8
-VGS(th) (V)
-IF(A)
T j =150 o C
T j =25 o C
1
1.2
0
0
0.6
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
-50
0
-V SD (V)
100
150
o
T j , Junction Temperature ( C)
Fig 11. Forward Characteristic of
Reverse Diode
Rev.2.02 3/16/2004
50
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
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SSM2303N
VDS
90%
RD
VDS
D
TO THE
OSCILLOSCOPE
0.5 x RATED VDS
G
RG
10%
S
VGS
VGS
-10 V
td(on)
Fig 13. Switching Time Circuit
td(off) tf
tr
Fig 14. Switching Time Waveform
VG
VDS
-10V
0.5 x RATED VDS
G
S
QG
TO THE
OSCILLOSCOPE
D
QGS
QGD
VGS
-1~-3mA
I
G
ID
Charge
Fig 15. Gate Charge Circuit
Q
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
Rev.2.02 3/16/2004
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