IRF730 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Higher Current Rating speed power switching applications such as switching Lower rDS(ON), Lower Capacitances regulators, conveters, solenoid and relay drivers. Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified ʳ PIN CONFIGURATION SYMBOL D TO-220 SOURCE DRAIN GATE Top View G S 1 2 N-Channel MOSFET 3 ʳ ORDERING INFORMATION Part Number Package IRF730..................................................TO-220 ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Ё Continuous Ё Pulsed (Note 1) Symbol Value Unit ID 6.0 A IDM 21 Gate-to-Source Voltage Ё Continue VGS ±20 Total Power Dissipation PD 96 W 0.77 W/к EAS 180 mJ TJ, TSTG -55 to 150 к șJC 1.70 к/W șJA 62 TL 300 Derate above 25к Single Pulse Drain-to-Source Avalanche Energy Ё TJ = 25к V (VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25ȍ) Operating and Storage Temperature Range Thermal Resistance Ё Junction to Case Ё Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds к Page 1 IRF730 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25к. CIRF730 Characteristic Drain-Source Breakdown Voltage Symbol Min V(BR)DSS 400 Typ Max Units V (VGS = 0 V, ID = 250 ӴA) Drain-Source Leakage Current ӴA IDSS (VDS = 400V, VGS = 0 V) 25 (VDS = 400V, VGS = 0 V, TJ = 125к) 100 Gate-Source Leakage Current-Forward IGSSF 100 nA IGSSR -100 nA 4.0 V (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) VGS(th) Gate Threshold Voltage 2.0 (VDS = VGS, ID = 250 ӴA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 3A) (Note 4) Forward Transconductance (VDS = 50V, ID = 3 A) (Note 4) Input Capacitance (VDS = 25 V, VGS = 0 V, Output Capacitance f = 1.0 MHz) Reverse Transfer Capacitance Turn-On Delay Time gFS 1.0 2.9 ȍ mhos Ciss 515 720 Coss 185 260 pF pF Crss 15 30 pF ns ns td(on) 7 10 (VDD = 200 V, ID = 6 A, tr 11 20 RG = 9.1ȍ, VGS = 10 V) (Note 4) td(off) 19 40 ns tf 10 20 ns Qg 9.5 Rise Time Turn-Off Delay Time RDS(on) Fall Time Total Gate Charge (VDS = 320V, ID = 6A Gate-Source Charge VGS = 10 V) (Note 4) Gate-Drain Charge Internal Drain Inductance Qgs 2 nC nC Qgd 3 nC LD 4.5 nH LS 7.5 nH Qrr 1.6 µC ton ** trr 270 (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Forward Turn-On Time IF = 6A, di/dt = 100A/µs , TJ = 25к (Note 4) Reverse Recovery Time Diode Forward Voltage IS = 6A, VGS = 0 V, TJ = 25к (Note 4) VSD ns 1.5 V Note (1) Repetitive rating; pulse width limited by max. junction temperature (2) VDD = 50V, starting TJ = 25к, L=24mH, RG = 25ȍ, IAS = 4.5A (3) ISD Љ 4.5A, di/dt Љ 75A/µs, VDD Љ V(BR)DSS, TJ Љ 150к (4) Pulse Test: Pulse Width Љ300µs, Duty Cycle Љ2% ** Negligible, Dominated by circuit inductance Page 2 IRF730 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 12 Normalized Drain-to-Source Resistance, Rdon Drain Current, Id (A) 10 3 Tc = 25 C Pulse width = 20 us Vgs = 10V (Top), 8V, 7V, 6V 5.5V, 5V, 4.5V (Bottom) 8 Vgs = 10 V Id = 5.5 A 2.5 2 1.5 SmartStar Technology, Inc. 6 2 4 2 1 0.5 0 0 0.1 1 -60 10 -20 Drain-to-Source Voltage, Vds (V) Figure 1. Id versus Vds Curve 100 140 10000 Vds = 320 V Id = 5.5 A Ciss =Cgd+Cgs 1000 Capacitor (pF) 8 6 Cos s=Cds+Cgd 100 4 Tc = 25 C f = 1 MHz Vgs = 0 V 10 2 Crss=Cgd 1 0 0.00 10.00 20.00 1.0 30.00 10.0 1000.0 Figure 4. Capacitor versus Vds Curve Figure 3. Vgs versus Qg Curve 10 100.0 Drain-to-Source Voltage , Vds (V) Total Gate Charge, Qg (nC) Normalized thermal impedance, Zthjc Gate-to-Source Voltage, Vgs (V) 60 Figure 2. Rdon versus Tj Curve 12 10 20 Junction Tem pe rature , Tj (C) Duty Cycle = 0.5 (Top), 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse (Bottom) 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (second) Figure 5. Transient thermal impedance Curve Page 3