SJV01N60 1A , 600V , RDS(ON) 10 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 DESCRIPTION The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls ,these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. FEATURES A B E C G H F 1 Gate 2 Drain 3 Source J REF. A B C D E Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature D Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 D 2 1 G 3 S ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 1 A Pulsed Drain Current IDM 9 A PD 0.625 W Single Pulsed Avalanche Energy EAS 20 mJ Thermal Resistance Junction-Ambient(Max). RθJA 200 °C / W TJ, TSTG 150, -50~150 °C Power Dissipation 1 Operating Junction & Storage Temperature Notes: 1. EAS condition: Tj=25°C, V DD=100V, VGS=10V, L=10mH, IAS=2A, RG=25Ω. http://www.SeCoSGmbH.com/ 13-Sep-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SJV01N60 1A , 600V , RDS(ON) 10 mΩ Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Symbol Parameter Drain-Source Breakdown Voltage Min. Typ. Max. Unit Teat Conditions BVDSS 600 - - V VGS=0, ID=250µA VGS(th) 2 - 4 V VDS=VGS, ID=250µA IGSS - - ±100 nA VDS=0, VGS= ±20V IDSS - - 0.1 µA VDS=600V, VGS=0 RDS(ON) - - 10 Ω VGS=10V, ID=0.6A gFS 0.5 - - S VDS=50V, ID=0.5A Td(on) - 8 - Tr - 21 nS Td(off) - 18 - Tf - 24 - VDD=300V ID=1A VGS=10V RG=18Ω Input Capacitance Ciss - 210 - Output Capacitance Coss - 28 - pF Crss - 4.2 - VGS=0 VDS=25V f=1.0 MHz VSD - - 1.5 V IS=1A, VGS=0 1 Gate Threshold Voltage 1 Gate-Source Leakage Current Drain-Source Leakage Current 1 Static Drain-Source On-Resistance Forward Transconductance 1 Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Reverse Transfer Capacitance Forward On Voltage 1 Notes: 1. Pulse Test : Pulse width≦300µs, duty cycle≦2%. http://www.SeCoSGmbH.com/ 13-Sep-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2