SPN9977 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9977 is the N-Channel logic enhancement mode power field effect transistors are produced using super high cell density , DMOS trench technology. The SPN9977 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS z Power Management in Note book z Powered System z DC/DC Converter z Load Switch FEATURES 60V/8A,RDS(ON)= 115mΩ@VGS= 10V 60V/6A,RDS(ON)= 110mΩ@VGS= 4.5V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251 package design PIN CONFIGURATION TO-252 TO-251 PART MARKING 2009/04/25 Ver.1 Page 1 SPN9977 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain ORDERING INFORMATION Part Number Package Part SPN9977T252RGB TO-252 SPN9977T251TGB TO-251 ※ SPN9977T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ※ SPN9977T251RGB : Tube ; Pb – Free ; Halogen - Free Marking SPN9977 SPN9977 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 60 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ ID 14 9.0 A Pulsed Drain Current IDM 45 A Avalanche Current IAS 14 A Power Dissipation TA=25℃ Operating Junction Temperature TO-252-2L TO-251 PD 40 55 W TJ 150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W 2009/04/25 Ver.1 Page 2 SPN9977 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V,ID=250uA VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) VDS≥5V,VGS =10V Forward Transconductance gfs Diode Forward Voltage VSD IS=1.7A,VGS =0V RDS(on) 0.5 1.5 VDS=0V,VGS=±20V VDS=60V,VGS=0V VDS=60V,VGS=0V TJ=85℃ VGS= 10V,ID=8A VGS=4.5V,ID=6A VDS=15V,ID=4.3A Drain-Source On-Resistance 60 ±100 1 5 14 V nA uA A 0.110 0.105 15 0.115 0.110 0.8 1.2 15 20 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 40 td(on) 10 20 15 25 25 35 12 20 Turn-On Time Turn-Off Time 2009/04/25 Ver.1 tr td(off) tf VDS=30V,VGS=10V ID= 4.3A nC 2.5 2.6 VDS=15,VGS=0V f=1MHz VDD=30V,RL=8.8Ω ID≡3.4A,VGEN=10V RG=1Ω 675 pF 80 Page 3 nS SPN9977 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/25 Ver.1 Page 4 SPN9977 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/25 Ver.1 Page 5 SPN9977 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/25 Ver.1 Page 6 SPN9977 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2009/04/25 Ver.1 Page 7 SPN9977 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2009/04/25 Ver.1 Page 8 SPN9977 N-Channel Enhancement Mode MOSFET TO-251 PACKAGE OUTLINE 2009/04/25 Ver.1 Page 9 SPN9977 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2009/04/25 Ver.1 Page 10