SPN09T10 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Powered System The SPN09T10 is the N-Channel logic enhancement mode DC/DC Converter power field effect transistor which is produced using super Load Switch high cell density DMOS trench technology. The SPN09T10 has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. FEATURES 100V/8A,RDS(ON)= 160mΩ@VGS= 10V High density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TO-252,TO-251,TO-263 package design TO-252 PIN CONFIGURATION TO-251 TO-263 G D S PART MARKING SPN09T10 AAAAAA BBBBBB A: Lot Code B: Date Code 2012/07/03 Ver.5 Page 1 SPN09T10 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin Symbol Description 1 G Gate 2 S Source 3 D Drain Package Part Marking ORDERING INFORMATION Part Number SPN09T10T252RGB TO-252 SPN09T10T251TGB TO-251 SPN09T10T263TGB TO-263 ※ SPN09T10T252RGB : Tape Reel ; Pb – Free ; Halogen - Free ※ SPN09T10T251RGB : Tube ; Pb – Free ; Halogen - Free ※ SPN09T10T263RGB : Tube ; Pb – Free ; Halogen - Free SPN09T10 SPN09T10 SPN09T10 ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 100 V Gate –Source Voltage VGSS ±20 V Continuous Drain Current(TJ=150℃) TA=25℃ TA=70℃ ID 14 9.0 A Pulsed Drain Current IDM 45 A Avalanche Current IAS 14 A Power Dissipation TA=25℃ TO-252-2L TO-251 Avalanche Energy with Single Pulse ( Tj=25℃, L = 0.14mH , IAS = 20A , VDD = 20V. ) PD 40 55 W EAS 28 mJ TJ -55/150 ℃ Storage Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 100 ℃/W Operating Junction Temperature 2012/07/03 Ver.5 Page 2 SPN09T10 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Symbol Conditions Min. V(BR)DSS VGS=0V,ID=250uA 100 Typ Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage VGS(th) VDS=VGS,ID=250uA Gate Leakage Current IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-Resistance 1 3 VDS=0V,VGS=±20V VDS=80V,VGS=0V VDS=80V,VGS=0V TJ=125℃ VDS≥5V,VGS =10V RDS(on) VGS= 10V,ID=10A Forward Transconductance gfs VDS=10V,ID=5A Diode Forward Voltage VSD IS=9A,VGS =0V ±100 25 250 9 V nA uA A 0.110 0.160 5.6 Ω S 1.3 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-On Time 2012/07/03 Ver.5 td(off) tf 16 nC 2.5 4.5 430 VDS=25,VGS=0V f=1MHz pF 56 35 td(on) tr Turn-Off Time 10 VDS=80V,VGS=10V ID= 5A 6.5 VDD=50V,RL=10Ω ID≡5A,VGEN=10V RG=3.3Ω 10 nS 13 3.4 Page 3 SPN09T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/07/03 Ver.5 Page 4 SPN09T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/07/03 Ver.5 Page 5 SPN09T10 N-Channel Enhancement Mode MOSFET TYPICAL CHARACTERISTICS 2012/07/03 Ver.5 Page 6 SPN09T10 N-Channel Enhancement Mode MOSFET TO-252 PACKAGE OUTLINE 2012/07/03 Ver.5 Page 7 SPN09T10 N-Channel Enhancement Mode MOSFET TO-251 PACKAGE OUTLINE 2012/07/03 Ver.5 Page 8 SPN09T10 N-Channel Enhancement Mode MOSFET TO-263 PACKAGE OUTLINE 2012/07/03 Ver.5 Page 9 SPN09T10 N-Channel Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 7F-2, No.3-1, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2012/07/03 Ver.5 Page 10