WEITRON MMBTA64

MMBTA64
COLLECTOR
Darlington Transistor
PNP Silicon
3
3
1
1
BASE
2
SOT-23
2
EMITTER
MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Symbol
VCES
VCBO
VEBO
IC
Value
-30
-30
Unit
Vdc
Vdc
Vdc
mAdc
-10
-500
THERMAL CHARACTERISTICS
Characteristics
Total Device Dissipation FR-5 Board (1)
TA =25 C
Derate above 25 C
Symbol
PD
Value
225
Unit
mW
Thermal Resistance, Junction Ambient
1.8
556
mW/ C
R θJA
TJ,Tstg
-55 to +150
Junction and Storage, Temperature
C/W
C
Device Marking
MMBTA63=2U , MMBTA64=2V
ELECTRICAL CHARACTERISTICS
Symbol
Min
Max
Unit
V(BR)CEO
-30
-
Vdc
Collector Cufoff Current(V CB =-30Vdc, I E =0)
ICBO
-
-0.1
uAdc
Emitter Cufoff Current(VEB =-10Vdc, IC =0)
IEBO
-
-0.1
uAdc
Characteristics
Collector-Emitter Breakdown Voltage(I C =-100 uAdc, IB =0)
1. FR-5=1.0 I I0.75 I I0.062 in
_ 300us, Duty Cycle <
_ 2.0%
2. Pulse Test: Pulse Width<
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MMBTA64
ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
10000
-
20000
-
-
-1.5
Unit
ON CHARACTERISTICS
hFE
(I C = -10 mAdc, VCE= -5.0 Vdc)
(IC = -100 mAdc, VCE = -5.0Vdc)
Collector-Emitter Saturation Voltage
(IC = -100 mAdc, IB = -0.1mAdc)
VCE(sat)
Base-Emitter On Voltage
(IC = -100 mAdc, VCE = -5.0mAdc)
VBE(on)
-
-2.0
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product
(IC = -10 mAdc, VCE=-5.0 Vdc, f=100 MHz)
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fT
125
-
MHz
MMBTA64
DC CURRENT GAIN : h FE
200
Ta =125 C
100
70
50
30
-10V
25 C
VCE =-2.0V
-5.0V
20
10
7.0
5.0
-55 C
3.0
2.0
-0.3
-0.5 -0.7
-2.0
-1.0
-3.0
-5.0 -7.0 -10
-20
-30
-50
-70
-100
-200
-300
COLLECTOR CURRENT : IC (mA)
-2.0
V,VOLTAGE (VOLTS)
Ta =25 C
VBE(sat) @IC/IB=100
-1.6
-1.2
VBE(on) @VCE =-5.0V
-0.8
VCE(sat) @IC/IB=1000
IC/IB=100
-0.4
0
-0.3-0.5 -1.0
-2 -3 -5
-10
-20 -30 -50 -100 -200-300
COLLECTOR CURRENT : IC (mA)
VCE ,COLLECTOR-EMITTER VOLTAGE
(VOLTS)
FIG.1 DC Current Gain
HIGH FREQUENCY CURRENT
GAIN : hFE
FIG.2 "On" Voltage
-2.0
Ta =25 C
-1.8
-1.6
IC =-10mA -50mA -100mA -175mA -300mA
-1.4
-1.2
-1.0
-0.8
-0.6
-0.1-0.2-0.5 -1 -2 -5 -10-20 -50-100-200-500-1K-2K -5K-10K
BASE CURRENT : IB (uA)
FIG.3 Collector Saturatiion Region
10
4.0
3.0
2.0
VCE =-5.0V
f=100MHz
Ta =25 C
1.0
0.4
0.2
0.1
-1.0 -2.0
-5.0
-10 -20
-50 -100 -200
-500 -1K
COLLECTOR CURRENT : IC (mA)
FIG.4 High Frequency Current Gain
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MMBTA64
SOT-23 Package Outline Dimensions
Unit:mm
A
B
T OP V IE W
E
G
Dim Min Max
A
0.35 0.51
B
1.19 1.40
C
2.10 3.00
D
0.85 1.05
E
0.46 1.00
G
1.70 2.10
H
2.70 3.10
J
0.01 0.13
K
0.89 1.10
L
0.30 0.61
M 0.076 0.25
C
D
H
K
J
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