MPSA94 - Weitron

MPSA94
High-Voltage PNP Transistors
TO-92
1. EMITTER
2. BASE
3. COLLECTOR
1
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base VOltage
Collector Current
Symbol
VCEO
VCBO
VEBO
IC
Value
-400
-400
-5.0
-200
Unit
Vdc
Vdc
Vdc
mAdc
Total Device Dissipation TA=25 C
PD
0.625
W
Junction Temperature
Tj
150
C
Storage, Temperature
Tstg
-55 to +150
C
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0)
V(BR)CEO
-400
-
Vdc
Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0)
V(BR)CBO
-400
-
Vdc
Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0)
V(BR)EBO
-5.0
-
Vdc
Collector Cutoff Current (VCE= -400 Vdc, IB =0)
ICE0
-
-5.0
uAdc
Collector Cutoff Current (VCB= -400 Vdc, IE=0)
ICBO
-
-0.1
uAdc
Emitter Cutoff Current (VEB= -4.0Vd c, IC =0)
IEBO
-
-0.1
uAdc
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WE IT R ON
MPSA94
Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Min
Max
Unit
HFE(1)
HFE(2)
70
80
-
HFE(3)
60
300
-
VCE(sat)
-
Symbol
On Characteristics
DC Current Gain
(IC= -1.0 mAdc, VCE=-10Vdc)
(IC= -10 mAdc, VCE= -10Vdc)
(IC= -100 mAdc, VCE= -10Vdc)
Collector-Emitter Saturation Voltage
(IC= -10 mAdc, IB= -1.0 mAdc)
(IC= -50 mAdc, IB= -5.0 mAdc)
Base-Emitter Saturation Voltage
(IC= -10 mAdc, IB= -1.0 mAdc)
Current-Gain-Bandwidth Product
(IC= 10 mAdc, VCE= -20 Vdc, f=30MHz)
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VBE(sat)
fT
-
50
-0.2
Vdc
-0.3
-0.75
-
Vdc
MHz
2N5401
MPSA94
FIG1.
FIG2.
FIG3.
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MPSA94
unit:mm
TO-92 Outline Dimensions
E
H
TO-92
Dim
A
B
C
D
E
G
H
J
K
L
L
C
J
K
D
A
B
G
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Min
Max
3.70
3.30
1.40
1.10
0.55
0.38
0.51
0.36
4.70
4.40
3.43
4.70
4.30
1.270TYP
2.44
2.64
14.10
14.50