MPSA94 High-Voltage PNP Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Symbol VCEO VCBO VEBO IC Value -400 -400 -5.0 -200 Unit Vdc Vdc Vdc mAdc Total Device Dissipation TA=25 C PD 0.625 W Junction Temperature Tj 150 C Storage, Temperature Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) V(BR)CEO -400 - Vdc Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO -400 - Vdc Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCE= -400 Vdc, IB =0) ICE0 - -5.0 uAdc Collector Cutoff Current (VCB= -400 Vdc, IE=0) ICBO - -0.1 uAdc Emitter Cutoff Current (VEB= -4.0Vd c, IC =0) IEBO - -0.1 uAdc WEITRON http://www.weitron.com.tw WE IT R ON MPSA94 Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Min Max Unit HFE(1) HFE(2) 70 80 - HFE(3) 60 300 - VCE(sat) - Symbol On Characteristics DC Current Gain (IC= -1.0 mAdc, VCE=-10Vdc) (IC= -10 mAdc, VCE= -10Vdc) (IC= -100 mAdc, VCE= -10Vdc) Collector-Emitter Saturation Voltage (IC= -10 mAdc, IB= -1.0 mAdc) (IC= -50 mAdc, IB= -5.0 mAdc) Base-Emitter Saturation Voltage (IC= -10 mAdc, IB= -1.0 mAdc) Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE= -20 Vdc, f=30MHz) WEITRON http://www.weitron.com.tw VBE(sat) fT - 50 -0.2 Vdc -0.3 -0.75 - Vdc MHz 2N5401 MPSA94 FIG1. FIG2. FIG3. WEITRON WEITRON http://www.weitron.com.tw http://www.weitron.com.tw MPSA94 unit:mm TO-92 Outline Dimensions E H TO-92 Dim A B C D E G H J K L L C J K D A B G WEITRON http://www.weitron.com.tw Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50