MJE3055 Plastic-Encapsulate Power Transistors 1 1. BASE 2 3 2. COLLECTOR TO-220 3. EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current (DC) Total Device Disspation TC=25 C Derate above 25 C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC(DC) Value 60 70 5.0 10 Unit Vdc Vdc Vdc Adc PD 75 0.6 W W/ C Tj , Tstg -55 to +150 C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= 200 mAdc, IB=0) V(BR)CEO 60 - Vdc Collector-Base Breakdown Voltage (IC= 1.0 mAdc, IE=0) V(BR)CBO 70 - Vdc Emitter-Base Breakdown Voltage (IE= 1.0 mAdc, IC=0) V(BR)EBO 5.0 - Vdc Collector Cutoff Current (VCB= 70 Vdc, IE=0) ICBO - 1.0 nAdc Emitter Cutoff Current (VEB= 5.0Vdc, IC =0) IEBO - 5.0 nAdc WEITRON http://www.weitron.com.tw MJE3055 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max hFE (1) Unit ON CHARACTERISTICS DC Current Gain (1) (IC= 4 Adc, VCE= 4 Vdc) (IC= 10 Adc, VCE= 4 Vdc) 20 - 100 hFE (2) 5 - - Collector-Emitter Saturation Voltage (1) (IC= 4 Adc, IB= 400 mAdc) (IC= 10 Adc, IB= 3.3 Adc) VCE(sat) - - 1.1 - 8 Base-Emitter On Voltage (1) (IC= 4 Adc, VCE = 4 Vdc) VBE(ON) - - 1.8 Vdc fT - 2 - MHz Current-Gain-Bandwidth Product (IC= 500 mAdc, VCE=10 Vdc) Note: _ 300us, Duty Cycle < _ 2.0% 1. Pulse Test: PW < WEITRON http://www.weitron.com.tw - Vdc MJE3055 TO-220 Outline Dimensions unit:mm TO-220 A D C1 Φ F H E1 E B1 L1 A1 B G G1 C Dim A A1 B B1 C C1 D E E1 G G1 F H L L1 Φ WEITRON http://www.weitron.com.tw Min Max 4.67 4.47 2.82 2.52 0.91 0.71 1.37 1.17 0.53 0.31 1.37 1.17 10.31 10.01 8.90 8.50 12.06 12.446 2.54 TYP 4.98 5.18 2.89 2.59 0.30 0.00 13.4 13.8 3.96 3.56 3.93 3.73