KTC3875 Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 1 BASE 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Symbol VCEO VCBO VEBO IC Value 50 60 5.0 150 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board (1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD Value 150 Unit mW mW/ C R θJA 1.2 833 TJ, Tstg -55 to +150 C/W C Device Marking KTC3875=AL ELECTRICAL CHARACTERISTICS Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC= -1 mAdc, IB=0) V(BR)CEO 50 - Vdc Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) V(BR)CBO 60 - Vdc Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) V(BR)EBO 5.0 - Vdc Collector Cutoff Current (VCB= 60Vdc , IE=0) ICBO - 0.1 uAdc Emitter Cutoff Current (VEB= 5.0 Vdc , I C=0) IEBO - 0.1 uAdc Characteristics 1. FR-5=1.0 I I 0.75 I I 0.062 in WEITRON http://www.weitron.com.tw KTC3875 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Min TYP Max Unit hFE 70 - 700 - VCE(sat) - 0.1 0.25 Vdc Cob - 2.0 3.5 Vdc Transition Frequency (IC= 1 mAdc, VCE= 10 Vdc) fT 80 - - MHz Noise Figure (VCE= 6 V, IC= 0.1mA, Rg=10kΩ , f=1kHz) NF 1.0 10 dB Characteristics Symbol ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage (IC= 100 mAdc, IB= 10 mAdc) Collector Output Capacitance (VCB= 10 V, IE= 0, f=1MHz) Classification of hFE Rank O Y G BL Range 70-140 120-240 200-400 350-700 Marking ALO ALG ALL WEITRON http://www.weitron.com.tw ALY KTC3875 WEITRON http://www.weitron.com.tw KTC3875 WEITRON http://www.weitron.com.tw KTC3875 SOT-23 Package Outline Dimensions Unit:mm A B T OP V IE W E G Dim Min Max A 0.35 0.51 B 1.19 1.40 C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 G 1.70 2.10 H 2.70 3.10 J 0.01 0.13 K 0.89 1.10 L 0.30 0.61 M 0.076 0.25 C D H K J WEITRON http://www.weitron.com.tw L M