WFF8N60 Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 28nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Voltage (VISO=4000V AC) � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 600 V Continuous Drain Current(@Tc=25℃) 7.5* A Continuous Drain Current(@Tc=100℃) 4.3* A 30 A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 240 mJ EAR Repetitive Avalanche Energy (Note1) 15 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ ns 48 W 0.38 W/℃ -55~150 ℃ 300 ℃ Total Power Dissipation(@Tc=25℃) PD Derating Factor above 25℃ TJ,Tstg TL Junction and Storage Temperature Channel Temperature *Drain current limited by junction temperature Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance , Junction -to -Case - - 2.6 ℃/W RQJA Thermal Resistance , Junction-to -Ambient - - 62.5 ℃/W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. WFF8N60 Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=600V,VGS=0V - - 10 µA VDS=480V,Tc=125℃ - - 100 µA Drain cut -off current Drain -source breakdown voltage Test Condition IDSS V(BR)DSS ID=250 µA,VGS=0V 600 - - V Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=3.75A - 0.8 1.2 Ω Forward Transconductance gfs VDS=50V,ID=3.75A - 8.7 - S Input capacitance Ciss VDS=25V, - 1100 1430 Reverse transfer capacitance Crss VGS=0V, - 135 175 Output capacitance Coss f=1MHz - 16 21 VDD=200V, - 30 70 ton ID=7.5A - 80 170 tf RG=25Ω - 65 140 - 60 130 - 28 36 - 7 - - 14.5 - Min Type Max Unit Rise time tr Turn-on time Switching time pF ns Fall time Turn-off time (Note4,5) toff Total gate charge(gate-source VDD=480V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=7.5A (Note4,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Continuous drain reverse current IDR - - - 7.5 A Pulse drain reverse current IDRP - - - 28 A Forward voltage(diode) VDSF IDR=7.5A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=7.5A,VGS=0V, - 320 - ns Reverse recovery charge Qrr dIDR / dt =100 A / µs - 2.4 - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=7.5A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤7.5A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, all for your advance WFF8N60 Fig.1 On State Characteristics Fig.2 Transfer Current Characteristics Fig.3 On-Resistance Variation vs Fig.4 Body Diode Forward Voltage Drain Current Variation with Source Current and Temperature Fig.5 On-Resistance Variation vs Fig.6 Gate Charge Characteristics Junction Temperature 3/7 Steady, all for your advance WFF8N60 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Steady, all for your advance WFF8N60 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance WFF8N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance WFF8N60 F Package Dimension TO-220 TO-220F Unit:mm 7/7 Steady, all for your advance