SFP12N60
Silicon N-Channel MOSFET
Features
�
12A,600V, RDS(on)(Max0.65Ω)@VGS=10V
�
Ultra-low Gate Charge(Typical 39nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Maximum Junction Temperature Range(150℃)
General Description
This Power
MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology.This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics .This devices is specially well
suited for high efficiency switch model power
supplies, power
factor correction and half bridge and full bridge resonant topology
line a electronic lamp ballast.
Absolute Maximum Ratings
Symbol
VDSS
Value
Units
Drain Source Voltage
Parameter
600
V
Continuous Drain Current(@Tc=25℃)
12
A
Continuous Drain Current(@Tc=100℃)
7.6
A
48
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
880
mJ
EAR
Repetitive Avalanche Energy
(Note1)
25
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
Total Power Dissipation(@Tc=25℃)
250
W
Derating Factor above 25℃
2.0
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.50
℃/W
RQCS
Thermal Resistance , Case-to-Sink
-
0.5
-
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
SFP12N60
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Break Voltage Temperature
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
IDSS
VDS=500V,VGS=0V
-
-
1
µA
V(BR)DSS
ID=250 µA,VGS=0V
600
-
-
V
-
0.5
-
V/℃
Drain cut -off current
Drain -source breakdown voltage
Test Condition
△BVDSS/
ID=250µA,Referenced
Coefficient
△TJ
to 25℃
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
3
-
4.5
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=6.0A
-
0.37
0.65
Ω
Forward Transconductance
gfs
VDS=50V,ID=6.0A
-
15
Input capacitance
Ciss
VDS=25V,
-
1580
2055
Reverse transfer capacitance
Crss
VGS=0V,
-
180
235
Output capacitance
Coss
f=1MHz
-
20
25
VDD=250V,
-
25
60
ID=12A
-
100
210
tf
RG=9.1Ω
-
130
270
toff
RD=31Ω
-
100
210
-
39
56
-
7.5
-
-
18.5
-
Min
Type
Max
Unit
Rise time
tr
Turn-on time
ton
S
Switching time
pF
ns
Fall time
Turn-off time
Total gate charge(gate-source
(Note4,5)
VDD=400V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=1A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
12
A
Pulse drain reverse current
IDRP
-
-
-
48
A
Forward voltage(diode)
VDSF
IDR=12A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=12A,VGS=0V,
-
418
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
4.85
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=11.2mH IAS=12A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤12A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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SFP12N60
Fig.1 On -State Characteristics
Fig.2 Transfer Characteristics
Fig.3 Capacitance Variation vs
Fig.4 Breakdown Voltage
Drain Voltage
Variation vs Temperature
Fig.5 On -Resistance Variation vs
Fig.6 Gate charge Characteristics
Junction Temperature
3/7
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SFP12N60
Fig.7Maximum Safe Operation Area
Fig.8 Maximum Drain Current vs
Case Temperature
Fig.9 Transient Thermal Response Curve
4/7
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SFP12N60
Fig.10 Gate Test Circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Unclamped Inductive Switching Test Circuit & Waveform
5/7
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SFP12N60
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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SFP12N60
TO-220 Package Dimension
Unit:mm
7/7
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