P12N60 WF WFP Silicon N-Channel MOSFET Features ■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi ’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast. Absolute Maximum Ratings Symbol VDSS Value Units Drain Source Voltage Parameter 600 V Continuous Drain Current(@Tc=25℃) 12 A Continuous Drain Current(@Tc=100℃) 7.6 A 48 A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 880 mJ EAR Repetitive Avalanche Energy (Note 1) 25 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns Total Power Dissipation(@Tc=25℃) 250 W Derating Factor above 25℃ 2.0 W/℃ -55~150 ℃ 300 ℃ PD TJ, Tstg TL Junction and Storage Temperature Maximum lead Temperature for soldering purposes Thermal Characteristics Symbol Parameter Value Min Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 0.50 ℃/W RQCS Thermal Resistance, Case-to-Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev.A Oct.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. P12N60 WF WFP Electrical Characteristics (Tc = 25°C) Characteristics Symbol Test Condition Min Type Max Unit IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V IDSS VDS = 500 V, VGS = 0 V - - 1 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 600 - - V Break Voltage Temperature ΔBVDSS/ ID=250μA, Referenced to - 0.5 - V/℃ Gate leakage current Gate−source breakdown voltage Drain cut−off current Coefficient ΔTJ 25℃ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 3 - 4.5 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 6.0A - 0.37 0.65 Ω Forward Transconductance gfs VDS = 50 V, ID = 6.0A - 15 - S Input capacitance Ciss VDS = 25 V, - 1580 2055 Reverse transfer capacitance Crss VGS = 0 V, - 180 235 Coss f = 1 MHz - 20 25 VDD =250 V, - 25 60 ton ID =12A - 100 210 tf RG=9.1Ω - 130 270 - 100 210 - 43 56 - 7.5 - - 18.5 - Output capacitance Rise time Turn−on time Switching time Fall time tr pF ns RD=31Ω Turn−off time toff (Note4,5) Total gate charge (gate−source VDD = 400 V, Qg plus gate−drain) VGS = 10 V, nC Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 1 A (Note4,5) Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Type Max Unit Continuous drain reverse current IDR - - - 12 A Pulse drain reverse current IDRP - - - 48 A Forward voltage (diode) VDSF IDR = 12 A, VGS = 0 V - - 1.4 V Reverse recovery time trr IDR = 12 A, VGS = 0 V, - 418 - ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 4.85 - μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=11.2mH,IAS=12A,VDD=50V,RG=25Ω,Starting TJ=25℃ 3.ISD≤12A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, all for your advance P12N60 WF WFP Fig.1 On-State Characteristics Fig.3 Capacitance Variation vs Drain voltage Fig.5 On-Resistance Variation vs Junction Temperature Fig.2 Transfer Characteristics Fig.4 Breakdown Voltage Variation vs Temperature Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance P12N60 WF WFP Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response curve 4/7 Steady, all for your advance P12N60 WF WFP Fig.10 Gate Test circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Uncamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance P12N60 WF WFP Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance P12N60 WF WFP TO-220 Package Dimension Unit:mm 7/7 Steady, all for your advance