P10N6
5
WF
WFP
10N65
Silicon N-Channel MOSFET
Features
�
10A,650V,RDS(on)(Max 1Ω)@VGS=10V
�
Ultra-low Gate Charge(Typical 43nC)
�
Fast Switching Capability
�
100%Avalanche Tested
�
Isolation Voltage(VISO=4000V AC)
�
Improved dv/dt capability
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for AC-DC switching
power supplies,DC-DC power converters,high voltage h-bridge motor
drive PWM.
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
Units
Drain Source Voltage
650
V
Continuous Drain Current(@Tc=25℃)
10*
A
Continuous Drain Current(@Tc=100℃)
6.0*
A
40*
A
±30
V
ID
IDM
Drain Current Pulsed
(Note1)
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note2)
748
mJ
EAR
Repetitive Avalanche Energy
(Note1)
15.6
mJ
dv/dt
Peak Diode Recovery dv /dt
(Note3)
4.5
V/ ns
Total Power Dissipation(@Tc=25℃)
156
W
Derating Factor above 25℃
1.25
W/℃
-55~150
℃
300
℃
PD
TJ,Tstg
TL
Junction and Storage Temperature
Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
Value
Min
Typ
Max
Units
RQJC
Thermal Resistance , Junction -to -Case
-
-
0.80
℃/W
RQJA
Thermal Resistance , Junction-to -Ambient
-
-
62.5
℃/W
Rev.A Sep.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
P10N6
5
WF
WFP
10N65
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
Gate leakage current
Gate-source breakdown voltage
Test Condition
Min
Type
Max
Unit
IGSS
VGS=±30V,VDS=0V
-
-
±100
nA
V(BR)GSS
IG=±10 µA,VDS=0V
±30
-
-
V
VDS=600V,VGS=0V
-
-
10
µA
100
µA
Drain cut -off current
IDSS
VDS=480V,Tc=125℃
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
650
-
-
V
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=4.75A
-
0.84
1.0
Ω
Forward Transconductance
gfs
VDS=50V,ID=4.75A
-
6.4
-
S
Input capacitance
Ciss
VDS=25V,
-
1430
-
Reverse transfer capacitance
Crss
VGS=0V,
-
117
-
Output capacitance
Coss
f=1MHz
-
2.2
-
tr
VDD=300V,
-
46
-
ton
ID=10A，
-
74
-
tf
RG=25Ω，
-
340
-
-
66
-
-
43
-
-
9
-
-
15
-
Min
Type
Max
Unit
Rise time
Turn-on time
Switching time
pF
ns
Fall time
Turn-off time
(Note4,5)
toff
Total gate charge(gate-source
VDD=480V,
Qg
plus gate-drain)
VGS=10V,
nC
Gate-source charge
Qgs
Gate-drain("miller") Charge
Qgd
ID=10A
(Note4,5)
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
-
-
10
A
Pulse drain reverse current
IDRP
-
-
-
40
A
Forward voltage(diode)
VDSF
IDR=10A,VGS=0V
-
-
1.4
V
Reverse recovery time
trr
IDR=10A,VGS=0V,
-
450
-
ns
Reverse recovery charge
Qrr
dIDR / dt =100 A / µs
-
2.4
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=14.5mH IAS=9.7A,VDD=90V,RG=25Ω ,Starting TJ=25℃
3.ISD≤10A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
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P10N6
5
WF
WFP
10N65
Fig.1 On-State Characteristics
Fig.2 Transfer Current Characteristics
Fig.3 On-Resistance variation
vs Drain Current
Fig.4 Body Diode Forward Voltage
Variation with Source Current
and Temperature
Fig.5 Maximum Drain Current vs
Case Temperature
Fig.6 Gate Charge Characteristics
3/7
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P10N6
5
WF
WFP
10N65
Fig.7 Maximum Safe Operation Area
Fig.8 On-Resistance Variation vs
Junction Temperature
Fig.9 Transient Thermal Response curve
4/7
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P10N6
5
WF
WFP
10N65
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
5/7
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P10N6
5
WF
WFP
10N65
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
6/7
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P10N6
5
WF
WFP
10N65
TO-220 Package Dimension
Unit:mm
7/7
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