SFP5N60 Silicon N-Channel MOSFET Features � 4.5A,600V,RDS(on)(Max2.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.this latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially well suited for half bridge and full bridge resonant topology line a electronic lamp ballast, high efficiency switched mode power supplies, active power factor correction. Absolute Maximum Ratings Symbol VDSS Parameter Value Units Drain Source Voltage 600 V Continuous Drain Current(@Tc=25℃) 4.5 A Continuous Drain Current(@Tc=100℃) 3.0 A 20 A ±30 V ID IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note2) 300 mJ EAR Repetitive Avalanche Energy (Note1) 12 mJ dv/dt Peak Diode Recovery dv /dt (Note3) 4.5 V/ns Total Power Dissipation(@Tc=25℃) 100 W Derating Factor above 25℃ 0.96 W/℃ -55~150 ℃ 300 ℃ PD TJ,Tstg TL Junction and Storage Temperature Channel Temperature Thermal Characteristics Symbol Parameter RQJC Thermal Resistance , Junction -to -Case RQCS Thermal Resistance , case-to-Sink RQJA Thermal Resistance , Junction-to -Ambient Value Units Min Typ Max - - 1.25 ℃/W 0.5 - - ℃/W - - 62.5 ℃/W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. SFP5N60 Electrical Characteristics(Tc=25℃) Characteristics Symbol Gate leakage current Gate-source breakdown voltage Min Type Max Unit IGSS VGS=±30V,VDS=0V - - ±100 nA V(BR)GSS IG=±10 µA,VDS=0V ±30 - - V VDS=600V,VGS=0V - - 10 µA VDS=480V,Tc=125℃ - - 100 µA Drain Cut -off current Drain -source breakdown voltage Test Condition IDSS V(BR)DSS ID=250 µA,VGS=0V 600 - - V Gate threshold voltage VGS(th) VDS=10V,ID=250 µA 2 - 4 V Drain -source ON resistance RDS(ON) VGS=10V,ID=2.2A - 1.8 2.2 Ω Forward Transconductance gfs VDS=50V,ID=2.2A - 4.0 - S Input capacitance Ciss VDS=25V, - 520 670 Reverse transfer capacitance Crss VGS=0V, - 70 90 Output capacitance Coss f=1MHz - 8 11 VDD=300V, - 13 35 ton ID=4.4A - 45 100 tf RG=25Ω - 25 60 - 35 80 - 16 20 - 3.4 - - 7 - Min Type Max Unit Rise time tr Turn-on time Switching time pF ns Fall time Turn-off time (Note4,5) toff Total gate charge(gate-source VDD=480V, Qg plus gate-drain) VGS=10V, nC Gate-source charge Qgs Gate-drain("miller") Charge Qgd ID=4.4A (Note,5) Source-Drain Ratings and Characteristics(Ta=25℃) Characteristics Symbol Test Condition Continuous drain reverse current IDR - - - 4.5 A Pulse drain reverse current IDRP - - - 17.6 A Forward voltage(diode) VDSF IDR=4.4A,VGS=0V - - 1.4 V Reverse recovery time trr IDR=4.4A,VGS=0V, 290 - - ns Reverse recovery charge Qrr dIDR /dt =100 A /µs 2 - - µC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=18.5mH IAS=4.4A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤4.4A,di/dt≤200A/us,VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2% 5. Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, all for your advance SFP5N60 Fig.1 On-State characteristics Fig.2 Transfer Current characteristics Fig.3 On-Resistance Variation vs Fig.4 Body Diode Forward Voltage Drain Current Variation with Source Current and Temperature Fig.5 On-Resistance Variation vs Fig.6 Gate Charge Characteristics Junction Temperature 3/7 Steady, all for your advance SFP5N60 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 Steady, all for your advance SFP5N60 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance SFP5N60 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance SFP5N60 TO-220C Package Dimension Unit:mm 7/7 Steady, all for your advance