9N20 WFP FP9 Silicon N-Channel MOSFET Features ■ 9A, 200V, RDS(on)(Max 0.4Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 43nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well G D suited for low voltage applications such as automotive, high S TO220 efficiency switching for DC/DC converters, and DC motor control. Absolute Maximum Ratings Symbol VDSS Parameter Value Units 200 V 9 A 5.7 A 36 A ±30 V Drain Source Voltage Continuous Drain Current(@Tc=25℃) ID Continuous Drain Current(@Tc=100℃) IDM Drain Current Pulsed (Note1) VGS Gate to Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 160 mJ EAR Repetitive Avalanche Energy (Note 1) 7.2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Total Power Dissipation(@Tc=25℃) PD 72 W 0.57 W/℃ -55~150 ℃ 300 ℃ Derating Factor above 25℃ TJ, Tstg Junction and Storage Temperature TL Maximum lead Temperature for soldering purposes Thermal Characteristics Symbol Parameter Min Value Typ Max Units RQJC Thermal Resistance, Junction-to-Case - - 1.74 ℃/W RQCS Thermal Resistance, Case to Sink - 0.5 - ℃/W RQJA Thermal Resistance, Junction-to-Ambient - - 62.5 ℃/W Rev, C Dec.2009 Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved. T03-1 9N20 WFP FP9N20 Electrical Characteristics (Tc = 25 25°°C) Characteristics Symbol Test Condition Min Type Max Unit Gate leakage current IGSS VGS = ±30 V, VDS = 0 V - - ±100 nA Gate−source breakdown voltage V(BR)GSS IG = ±10 μA, VDS = 0 V ±30 - - V Drain cut−off current IDSS VDS = 200 V, VGS = 0 V - - 10 μA Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V 200 - - V ID=250μA, Referenced to 25℃ - 0.2 - V/℃ ΔBVDSS/ Break Voltage Temperature Coefficient ΔTJ Gate threshold voltage VGS(th) VDS = 10 V, ID =250 μA 2 - 4 V Drain−source ON resistance RDS(ON) VGS = 10 V, ID = 5.4A - - 0.4 Ω Forward Transconductance gfs VDS = 50 V, ID =5.4A 3.8 - - S Input capacitance Ciss VDS = 25 V, - 800 - Reverse transfer capacitance Crss VGS = 0 V, - 240 - Output capacitance Coss f = 1 MHz - 76 - Rise time tr VDD =100 V, - 9.4 - Turn−on time ton ID = 5.9 A - 28 - Fall time tf RG=12 Ω - 39 - Turn−off time toff (Note4,5) - 20 - - 43 - - 7 - - 23 - Test Condition Switching time pF ns Total gate charge (gate−source plus gate−drain) VDD = 160 V, Qg VGS = 10 V, Gate−source charge Qgs Gate−drain (“miller”) Charge Qgd ID = 5.9 A (Note4,5) nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Min Type Max Unit Continuous drain reverse current IDR - - - 9 A Pulse drain reverse current IDRP - - - 36 A Forward voltage (diode) VDSF IDR = 9 A, VGS = 0 V - 1.4 2.0 V Reverse recovery time trr IDR = 5.9A, VGS = 0 V, - 170 340 ns Reverse recovery charge Qrr dIDR / dt = 100 A / μs - 1.1 2.2 μC Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=500uH,IAS=9 A,VDD=50V,RG=0Ω,Starting TJ=25℃ 3.ISD≤9A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃ 4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2% 5.Essentially independent of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 . Steady, all for your advance 9N20 WFP FP9N20 Fig. 1 On-State Characteristics Fig.2 Transfer Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.4 Body Diode Forward Voltage Variation vs. Source Current and Temperature Fig.5 On-Resistance Variation vs Junction Temperature Fig.6 Gate Charge Characteristics 3/7 . Steady, all for your advance 9N20 WFP FP9N20 Fig.7 Maximum Safe Operation Area Fig.8 Maximum Drain Current vs Case Temperature Fig.9 Transient Thermal Response Curve 4/7 . Steady, all for your advance 9N20 WFP FP9N20 Fig.10 Gate Test Circuit & Waveform Fig.11 Resistive Switching Test Circuit & Waveform Fig.12 Unclamped Inductive Switching Test Circuit & Waveform 5/7 . Steady, all for your advance 9N20 WFP FP9N20 Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 . Steady, all for your advance 9N20 WFP FP9N20 TO-220 Package Dimension Unit: mm 7/7 . Steady, all for your advance