SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZT560 ISSUE 1– NOVEMBER 1998 FEATURES * 500 Volt VCEO * 150mA continuous current * Ptot = 2 Watt C E C PARTMARKING DETAIL – FZT560 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -500 V Collector-Emitter Voltage V CEO -500 V Emitter-Base Voltage V EBO -5 V Peak Pulse Current I CM -500 mA Continuous Collector Current IC -150 mA Power Dissipation at T amb=25°C P tot 2 W Operating and Storage Temperature Range T j:T stg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V (BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. -500 V I C=-100µA V CEO(SUS) -500 V I C=-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E=-100µA Collector Cut-Off Current I CBO -100 nA V CB=-500V Collector Cut-Off Current I CES -100 nA V CE=-500V Emitter Cut-Off Current I EBO -100 nA V EB=-5V Collector-Emitter Saturation Voltage V CE(sat) -0.20 -0.5 V V I C=-20mA, I B=-2mA I C=-50mA, I B=-10mA* Base-Emitter Saturation Voltage V BE(sat) -0.9 V I C=-50mA, I B=-10mA* Base-Emitter Turn On Voltage V BE(on) -0.9 V Static Forward Current Transfer Ratio h FE 100 300 80 300 15 typ Transition Frequency fT 60 Output Capacitance C obo Switching times t on t off MAX. MHz 8 110 typ. 1.5 typ I C =-50mA, V CE=-10V* I C=-1mA, V CE=-10V I C=-50mA, V CE=-10V* I C=-100mA, V CE=-10V* I C=-10mA, V CE=-20V f=50MHz pF V CB=-20, f=1MHz ns µs V CE=-100, I C=-50mA, I B1=-5mA,I B2=10mA, * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% FZT560 TYPICAL CHARACTERISTICS 0.8 +25°C IC/IB=10 1.6 0.6 1.2 IC/IB=10 IC/IB=20 IC/IB=50 0.8 0.2 0.4 0 -55°C +25°C +100°C +150°C 0.4 1m 10m 100m 0 10m 1m IC - Collector Current (A) VCE(sat) v IC 100m IC - Collector Current (A) VCE(sat) v IC 1.0 IC/IB=10 VCE=5V 240 0.8 +100°C 0.6 160 +25°C 0.4 -55°C +25°C +100°C +150°C 80 -55°C 0.2 0 0 1m 10m 100m 1 1m IC - Collector Current (A) hFE v IC 10m 100m IC - Collector Current (A) VBE(sat) v IC 1.0 1 0.75 0.1 0.5 -55°C +25°C +100°C +150°C 0.25 0 0.001 1m 10m IC - Collector Current (A) VBE(on) v IC DC 1s 100ms 10ms 1ms 100us 0.01 100m 1 10 100 VCE - Collector Emitter Voltage (V) Safe Operating Area 1000