Zowie Technology Corporation SILICON EPITAXIAL PLANAR DIODE LL4148GH Halogen-free type Lead free product LL-34 (SOD-80) fast switching diode in MiniMELF case especially suited for automatic surface mounting ψ1.45 ± 0.05 3.50 ± 0.20 0.30 ± 0.10 Cathode Mark Glass case Mini MELF Dimensions in mm Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 100 V Reverse Voltage VR 75 V IF(AV) 200 mA IFSM 0.5 1 4 A Ptot 500 Average Rectified Forward Current Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 µs Power Dissipation 1) mW Junction Temperature Tj 175 O Storage Temperature Range TS - 65 to + 175 O 1) REV. 0 C C Valid provided that electrodes are kept at ambient temperature. Zowie Technology Corporation Zowie Technology Corporation Characteristics at Tj = 25 OC Parameter Symbol Min. Max. Unit VF - 1 V IR IR IR - 25 5 50 nA µA µA V(BR)R 100 - V Capacitance at VF = VR = 0 Ctot - 4 pF Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz Vfr - 2.5 V Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr - 4 ns RthA - 0.35 1) K/mW ηV 0.45 - - Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage tested with 100 µA Pulses Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V Vo 2nF 5K ~ ~ ~ VRF =2V Valid provided that electrodes are kept at ambient temperature. 60 1) Rectification Efficiency Measurement Circuit REV. 0 Zowie Technology Corporation Zowie Technology Corporation Dynamic forward resistance versus forward current Forward characteristics 10 3 10 4 Tj=25 oC f=1KHz 5 2 10 2 o Tj=100 C iF 10 3 o Tj=25 C rf 10 5 2 10 2 5 1 2 10 10 -1 5 2 10 -2 0 1 2V 1 10 -1 10 -2 1 10 2 mA 10 VF IF Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that electrodes are kept at ambient temperature mW 1000 Tj=25 oC f=1MHz 900 1.1 800 P tot Ctot(VR ) Ctot(0V) 1.0 700 600 500 0.9 400 300 0.8 200 100 0.7 0 0 o 200 C 100 Tamb REV. 0 0 0 2 4 6 8 10 V VR Zowie Technology Corporation Zowie Technology Corporation SILICON EPITAXIAL PLANAR DIODE Admissible repetitive peak forward current versus pulse duration Valid provided that electrodes are kept at ambient temperature A 100 v=tp/T I 5 4 3 IFRM 2 tp 10 IFRM T=1/fp t v=0 5 4 3 T 0.1 2 0.2 1 0.5 5 4 3 2 0.1 10 -5 2 5 10 -4 2 10 -3 5 2 5 10 -2 2 5 10 -1 2 5 1 2 5 10 s tp Leakage current versus junction temperature nA 10 4 5 2 10 3 IR 5 2 10 2 5 2 10 5 VR=20V 2 1 0 o 200 C 100 Tj REV. 0 Zowie Technology Corporation