LL4148GH

Zowie Technology Corporation
Silicon Epitaxial Planar Switching Diode
LL4148GH
Halogen-free type
Lead free product
LL-34 (SOD-80)
fast switching diode in Mini MELF case especially
suited for automatic surface mounting
ψ1.45 ± 0.05
3.50 ± 0.20
0.30 ± 0.10
Cathode Mark
Glass case Mini MELF
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
100
V
Reverse Voltage
VR
75
V
IF(AV)
200
mA
IFSM
0.5
1
4
A
Ptot
500
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
at t = 1 s
at t = 1 ms
at t = 1 µs
Power Dissipation
Operating and Storage Temperature Range
1)
REV. 1
Tj, Tstg
1)
mW
- 55 to + 175
C
O
Valid provided that electrodes are kept at ambient temperature.
Zowie Technology Corporation
Zowie Technology Corporation
Characteristics at Tj = 25 OC
Parameter
Symbol
Min.
Max.
Unit
VF
-
1
V
IR
IR
IR
-
25
5
50
nA
µA
µA
V(BR)R
100
-
V
Capacitance
at VF = VR = 0
Ctot
-
4
pF
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
Vfr
-
2.5
V
Reverse Recovery Time
from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
trr
-
4
ns
RthA
-
0.35 1)
K/mW
ηV
0.45
-
-
Forward Voltage
at IF = 10 mA
Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 OC
Reverse Breakdown Voltage
tested with 100 µA Pulses
Thermal Resistance Junction to Ambient Air
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
Vo
2nF
5K
~
~
~
VRF =2V
Valid provided that electrodes are kept at ambient temperature.
60
1)
Rectification Efficiency Measurement Circuit
REV. 1
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Zowie Technology Corporation
Dynamic forward resistance
versus forward current
Forward characteristics
10
3
10 4
Tj=25 oC
f=1KHz
5
2
10 2
o
Tj=100 C
iF
10 3
o
Tj=25 C
rf
10
5
2
10 2
5
1
2
10
10 -1
5
2
10 -2
0
2V
1
1
10 -1
10 -2
1
10 2 mA
10
VF
IF
Admissible power dissipation
versus ambient temperature
Relative capacitance
versus reverse voltage
Valid provided that electrodes are kept at ambient
temperature
mW
1000
Tj=25 oC
f=1MHz
900
1.1
800
P tot
Ctot(VR )
Ctot(0V)
1.0
700
600
500
0.9
400
300
0.8
200
100
0.7
0
0
o
200 C
100
Tamb
REV. 1
0
0
2
4
8
6
10 V
VR
Zowie Technology Corporation
Zowie Technology Corporation
SILICON EPITAXIAL PLANAR DIODE
Admissible repetitive peak forward current versus pulse duration
Valid provided that electrodes are kept at ambient temperature
A
100
v=tp/T
I
5
4
3
IFRM
2
tp
10
IFRM
T=1/fp
t
v=0
5
4
3
T
0.1
2
0.2
1
0.5
5
4
3
2
0.1
10 -5
2
5
10 -4
2
10 -3
5
2
5
10 -2
2
5
10 -1
2
5
1
2
5
10 s
tp
Leakage current
versus junction temperature
nA
10 4
5
2
10 3
IR
5
2
10 2
5
2
10
5
VR=20V
2
1
0
o
200 C
100
Tj
REV. 1
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