DAYA LL4148

LL4148
SILICON EPITAXIAL PLANAR DIODE
LL-34
fast switching diode in MiniMELF case especially suited
for automatic surface mounting.
Identical electrically to standard JEDEC 1N4148
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Reverse Voltage
VR
75
V
Peak Reverse Voltage
VRM
100
V
IO
150
Repetitive Peak Forward Current
IFRM
500
mA
Peak Forward Surge Current at tp = 1µs
IFSM
2
A
Rectified Current (Average)
Half Wave Rectification with Resist. Load
1)
mA
at Tamb = 25 C and f/50 Hz
O
Power Dissipation
1)
Ptot
500
Junction Temperature
Tj
175
O
Storage Temperature Range
TS
-65 to +175
O
1)
Valid provided that electrodes are kept at ambient temperature.
mW
C
C
LL4148
Characteristics at Tj = 25 OC
Parameter
Symbol
Min.
Max.
Unit
VF
-
1
V
IR
IR
IR
-
25
5
50
nA
µA
µA
V(BR)R
100
-
V
Capacitance
at VF = VR = 0
Ctot
-
4
pF
Voltage Rise when Switching ON
tested with 50mA Forward Pulses
tp = 0.1 s, Rise Time<30 ns, fp = 5 to 100 KHz
Vfr
-
2.5
V
Reverse Recovery Time
from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω
trr
-
4
ns
RthA
-
0.351)
K/mW
ηv
0.45
-
-
Forward Voltage
at IF = 10 mA
Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 OC
Reverse Breakdown Voltage
tested with 100 µA Pulses
Thermal Resistance Junction to Ambient Air
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
Vo
2nF
5K
~
~
~
VRF =2V
Valid provided that electrodes are kept at ambient temperature.
60
1)
Rectification Efficiency Measurement Circuit
LL4148
Dynamic forward resistance
versus forward current
Forward characteristics
10
LL 4148
LL 4148
3
10 4
Tj=25 oC
f=1KHz
5
2
10 2
o
Tj=100 C
iF
10 3
o
Tj=25 C
rf
10
5
2
10 2
5
1
2
10
10 -1
5
2
10 -2
0
1
2V
1
10 -1
10 -2
1
10 2 mA
10
VF
IF
Admissible power dissipation
versus ambient temperature
Relative capacitance
versus reverse voltage
Valid provided that electrodes are kept at ambient
temperature
mW
1000
LL 4148
LL 4148
Tj=25 oC
f=1MHz
900
1.1
800
P tot
Ctot(VR )
Ctot(0V)
700
1.0
600
500
0.9
400
300
0.8
200
0.7
100
0
0
o
200 C
100
Tamb
0
0
2
4
8
6
VR
10 V
LL4148
Leakage current
versus junction temperature
nA
10 4
LL 4148
5
2
10 3
IR
5
2
10 2
5
2
10
5
VR=20V
2
1
0
o
200 C
100
Tj
Admissible repetitive peak forward current versus pulse duration
Valid provided that electrodes are kept at ambient temperature
A
100
LL 4148
v=tp/T
I
5
4
3
IFRM
2
tp
10
IFRM
T=1/fp
t
v=0
5
4
3
T
0.1
2
0.2
1
0.5
5
4
3
2
0.1
10 -5
2
5
10 -4
2
5
10 -3
2
5
10 -2
2
tp
5
10 -1
2
5
1
2
5
10 s