LL4148 SILICON EPITAXIAL PLANAR DIODE LL-34 fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4148 Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V IO 150 Repetitive Peak Forward Current IFRM 500 mA Peak Forward Surge Current at tp = 1µs IFSM 2 A Rectified Current (Average) Half Wave Rectification with Resist. Load 1) mA at Tamb = 25 C and f/50 Hz O Power Dissipation 1) Ptot 500 Junction Temperature Tj 175 O Storage Temperature Range TS -65 to +175 O 1) Valid provided that electrodes are kept at ambient temperature. mW C C LL4148 Characteristics at Tj = 25 OC Parameter Symbol Min. Max. Unit VF - 1 V IR IR IR - 25 5 50 nA µA µA V(BR)R 100 - V Capacitance at VF = VR = 0 Ctot - 4 pF Voltage Rise when Switching ON tested with 50mA Forward Pulses tp = 0.1 s, Rise Time<30 ns, fp = 5 to 100 KHz Vfr - 2.5 V Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω trr - 4 ns RthA - 0.351) K/mW ηv 0.45 - - Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage tested with 100 µA Pulses Thermal Resistance Junction to Ambient Air Rectification Efficiency at f = 100 MHz, VRF = 2 V Vo 2nF 5K ~ ~ ~ VRF =2V Valid provided that electrodes are kept at ambient temperature. 60 1) Rectification Efficiency Measurement Circuit LL4148 Dynamic forward resistance versus forward current Forward characteristics 10 LL 4148 LL 4148 3 10 4 Tj=25 oC f=1KHz 5 2 10 2 o Tj=100 C iF 10 3 o Tj=25 C rf 10 5 2 10 2 5 1 2 10 10 -1 5 2 10 -2 0 1 2V 1 10 -1 10 -2 1 10 2 mA 10 VF IF Admissible power dissipation versus ambient temperature Relative capacitance versus reverse voltage Valid provided that electrodes are kept at ambient temperature mW 1000 LL 4148 LL 4148 Tj=25 oC f=1MHz 900 1.1 800 P tot Ctot(VR ) Ctot(0V) 700 1.0 600 500 0.9 400 300 0.8 200 0.7 100 0 0 o 200 C 100 Tamb 0 0 2 4 8 6 VR 10 V LL4148 Leakage current versus junction temperature nA 10 4 LL 4148 5 2 10 3 IR 5 2 10 2 5 2 10 5 VR=20V 2 1 0 o 200 C 100 Tj Admissible repetitive peak forward current versus pulse duration Valid provided that electrodes are kept at ambient temperature A 100 LL 4148 v=tp/T I 5 4 3 IFRM 2 tp 10 IFRM T=1/fp t v=0 5 4 3 T 0.1 2 0.2 1 0.5 5 4 3 2 0.1 10 -5 2 5 10 -4 2 5 10 -3 2 5 10 -2 2 tp 5 10 -1 2 5 1 2 5 10 s