APTM20DUM10TG VDSS = 200V RDSon = 10mΩ typ @ Tj = 25°C ID = 175A @ Tc = 25°C Dual common source MOSFET Power Module Q1 Q2 G1 G2 S1 S2 S NTC1 NT C2 G2 S2 D1 S D2 D2 S1 S2 NTC2 G1 G2 NTC1 Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • Internal thermistor for temperature monitoring • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 200 175 131 700 ±30 12 694 89 50 2500 Unit V A V mΩ W A July, 2006 D2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM20DUM10TG – Rev 3 D1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies APTM20DUM10TG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 200V VGS = 0V,VDS = 160V Min VGS = 10V, ID = 87.5A VGS = VDS, ID = 5mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X Reverse Recovery Time Reverse Recovery Charge 10 3 Min VGS = 10V VBus = 100V ID = 150A Max Unit µA mΩ V nA nF nC 28 56 ns 81 99 926 µJ 910 Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5Ω 1216 µJ 1062 Min Typ Tc = 25°C Tc = 80°C VGS = 0V, IS = - 150A IS = - 150A, VR = 133V diS/dt = 200A/µs Unit 94 Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 150A, R G = 2.5Ω Test Conditions Typ 13.7 4.36 0.19 224 Max 200 1000 12 5 ±150 86 Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 150A R G = 2.5Ω Source - Drain diode ratings and characteristics Symbol Typ Tj = 25°C Tj = 125°C 284 6.1 Max 175 131 1.3 5 Unit A V V/ns ns µC www.microsemi.com July, 2006 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 175A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C 2–6 APTM20DUM10TG – Rev 3 Symbol APTM20DUM10TG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To Heatsink M5 Typ 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min R 25 Max 0.18 Typ 50 3952 Max Unit °C/W V °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T ALL DIMENSIO NS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM20DUM10TG – Rev 3 July, 2006 SP4 Package outline (dimensions in mm) APTM20DUM10TG Thermal Impedance (°C/W) Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.2 0.18 0.9 0.16 0.14 0.7 0.12 0.5 0.1 0.08 0.3 0.06 Single Pulse 0.04 0.1 0.02 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 9V 400 ID, Drain Current (A) 7.5V 300 7V 200 6.5V 6V 100 300 200 T J=25°C 100 TJ =125°C 5.5V 0 TJ =-55°C 0 0 5 10 15 20 25 2 3 4 5 6 7 8 9 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature RDS (on) vs Drain Current 1.2 180 Normalized to V GS=10V @ 87.5A 1.15 1.1 I D, DC Drain Current (A) VGS =10V 1.05 1 VGS =20V 0.95 0.9 160 140 120 100 80 60 40 20 0 0 40 80 120 160 200 I D, Drain Current (A) 240 www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) 150 July, 2006 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 4–6 APTM20DUM10TG – Rev 3 I D, Drain Current (A) V GS=15&10V Transfert Characteristics 400 500 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Threshold Voltage vs Temperature ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) VGS=10V ID= 87.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) Maximum Safe Operating Area 1000 1.2 1.1 1.0 0.9 0.8 limited by RDSon 100µs 100 1ms 10ms 10 Single pulse TJ=150°C TC=25°C 0.7 0.6 DC line 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ciss 10000 Coss 1000 Crss 100 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 12 V DS =40V I D=150A 10 TJ=25°C V DS =100V 10 20 30 40 50 VDS, Drain to Source Voltage (V) 8 V DS =160V 6 4 2 0 0 50 100 150 200 250 Gate Charge (nC) July, 2006 0 1 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) ON resistance vs Temperature 2.5 www.microsemi.com 5–6 APTM20DUM10TG – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM20DUM10TG APTM20DUM10TG Rise and Fall times vs Current 90 160 80 140 td(off) 70 VDS=133V RG=2.5Ω TJ=125°C L=100µH 60 50 40 30 100 80 tr 60 20 10 0 0 50 100 150 200 250 300 0 50 I D, Drain Current (A) Eon Eoff 1 0.5 0 250 300 VDS=133V ID=150A TJ=125°C L=100µH 2.5 Eoff Eon 2 Eon 1.5 1 0 50 100 150 200 250 0 300 300 ZVS 250 200 V DS=133V D=50% R G=2.5Ω T J=125°C T C=75°C ZCS 150 Hard Switching 100 50 0 40 10 15 20 Source to Drain Diode Forward Voltage 1000 100 TJ =150°C TJ =25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 VSD, Source to Drain Voltage (V) 60 80 100 120 140 160 ID, Drain Current (A) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM20DUM10TG – Rev 3 July, 2006 20 IDR, Reverse Drain Current (A) Operating Frequency vs Drain Current 350 5 Gate Resistance (Ohms) ID, Drain Current (A) Frequency (kHz) 200 3 Switching Energy (mJ) Eon and Eoff (mJ) 1.5 150 Switching Energy vs Gate Resistance Switching Energy vs Current VDS=133V RG=2.5Ω TJ=125°C L=100µH 100 ID, Drain Current (A) 2.5 2 tf 40 td(on) 20 VDS=133V RG=2.5Ω T J=125°C L=100µH 120 t r and tf (ns) td(on) and td(off) (ns) Delay Times vs Current