APTM120UM95FAG Single Switch MOSFET Power Module SK S D DK G S D Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • Power MOS 7® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration • AlN substrate for improved thermal performance Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile • RoHS Compliant G Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1200 103 77 412 ±30 114 2272 25 50 3000 Unit V A V mΩ W A July, 2006 SK mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTM120UM95FAG Rev 1 DK VDSS = 1200V RDSon = 95mΩ typ @ Tj = 25°C ID = 103A @ Tc = 25°C APTM120UM95FAG All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions Min VGS = 0V,VDS = 1200V T j = 25°C VGS = 0V,VDS = 1000V T j = 125°C VGS = 10V, ID = 51.5A VGS = VDS, ID = 15mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X trr Reverse Recovery Time Qrr Reverse Recovery Charge 95 3 Min VGS = 10V VBus = 600V ID = 103A Typ 30.9 4.6 0.78 1122 Unit Max Unit mA mΩ V nA nF nC 720 20 Inductive switching @ 125°C VGS = 15V VBus = 800V ID = 103A R G =0.8Ω 15 45 5.9 mJ 4.1 Inductive switching @ 125°C VGS = 15V, VBus = 800V ID = 103A, R G = 0.8Ω Test Conditions ns 160 Inductive switching @ 25°C VGS = 15V, VBus = 800V ID = 103A, R G = 0.8Ω 9.4 mJ 5.14 Min Typ Tj = 25°C Max 103 77 1.3 18 320 Tj = 125°C 650 Tc = 25°C Tc = 80°C VGS = 0V, IS = - 103A IS = - 103A VR = 600V diS/dt = 600A/µs Max 0.6 3 114 5 ±500 144 Source - Drain diode ratings and characteristics Symbol IS Typ Tj = 25°C 12 Tj = 125°C 42 Unit A V V/ns ns µC July, 2006 IDSS Characteristic X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 103A di/dt ≤ 700A/µs VR ≤ VDSS Tj ≤ 150°C www.microsemi.com 2–6 APTM120UM95FAG Rev 1 Symbol APTM120UM95FAG Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Torque Mounting torque 2500 -40 -40 -40 3 2 Wt Package Weight Operating junction temperature range Storage Temperature Range Operating Case Temperature To heatsink For terminals M6 M5 Typ Max 0.055 150 125 100 5 3.5 280 Unit °C/W V °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTM120UM95FAG Rev 1 July, 2006 SP6 Package outline (dimensions in mm) APTM120UM95FAG Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.06 0.9 0.05 0.7 0.04 0.03 0.5 0.02 0.3 0.01 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 480 300 240 7V 6.5V 180 120 6V 60 5.5V 5 10 15 20 25 360 300 240 180 TJ=25°C 120 60 5V 0 0 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 420 ID, Drain Current (A) TJ=125°C 30 0 ID, DC Drain Current (A) 4 5 6 7 8 9 1.1 VGS=20V 0.9 0.8 100 80 60 40 20 0 0 60 120 180 240 ID, Drain Current (A) 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance VGS=10V 1 3 120 Normalized to VGS =10V @ 51.5A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) VDS, Drain to Source Voltage (V) 1.4 TJ=-55°C 0 4–6 APTM120UM95FAG Rev 1 I D, Drain Current (A) VGS =15, 10 & 8V 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=51.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 limited by RDS on 1ms 100 10ms 10 Single pulse TJ=150°C TC=25°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss Crss 1000 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=103A TJ=25°C 12 10 VDS=240V V DS =600V 8 VDS=960V 6 4 2 0 0 240 480 720 960 1200 1440 Gate Charge (nC) July, 2006 0 1200 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) www.microsemi.com 5–6 APTM120UM95FAG Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM120UM95FAG APTM120UM95FAG Delay Times vs Current t d(off) VDS=800V RG=0.8Ω T J=125°C L=100µH 150 60 120 tr and tf (ns) td(on) and td(off) (ns) Rise and Fall times vs Current 80 180 V DS=800V RG=0.8Ω T J=125°C L=100µH 90 60 40 tr 20 td(on) 30 0 0 30 60 90 120 150 180 210 30 60 90 120 150 180 I D, Drain Current (A) I D, Drain Current (A) 20 12 Eon Switching Energy (mJ) Switching Energy (mJ) VDS=800V RG=0.8Ω TJ=125°C L=100µH 15 Eoff 9 6 3 0 V DS=800V ID=103A T J=125°C L=100µH 16 12 Eon 8 Eoff 60 90 120 150 180 210 0.0 ID, Drain Current (A) 1.2 2.4 3.6 4.8 6.0 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 250 200 Frequency (kHz) Eoff 4 30 ZCS 150 50 210 Switching Energy vs Gate Resistance Switching Energy vs Current 18 100 tf V DS=800V D=50% R G=0.8Ω T J=125°C T C=75°C ZVS Hard switching 0 25 40 55 70 85 ID, Drain Current (A) 100 T J=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 APTM120UM95FAG Rev 1 July, 2006 10 T J=150°C 100