APTC80H29T3G Full - Bridge VDSS = 800V RDSon = 290mΩ max @ Tj = 25°C ID = 15A @ Tc = 25°C Super Junction MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies 13 14 Q1 Q3 18 11 23 8 19 Features • 10 Q2 Q4 26 4 27 3 30 29 15 16 R1 28 27 26 25 • • 32 31 23 22 • • 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Each leg can be easily paralleled to achieve a phase leg of twice the current capability • RoHS Compliant Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 800 15 11 60 ±30 290 156 17 0.5 670 Unit V A V mΩ W A July, 2006 7 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–6 APTC80H29T3G – Rev 1 22 APTC80H29T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGS = 0V,VDS = 800V VGS = 0V,VDS = 800V Min VGS = 10V, ID = 7.5A VGS = VDS, ID = 1mA VGS = ±20 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz VSD dv/dt trr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery X Reverse Recovery Time Qrr Reverse Recovery Charge IS 2.1 3 Min Typ 2254 1046 54 90 VGS = 10V VBus = 400V ID = 15A Unit Max Unit µA mΩ V nA pF nC 45 Inductive switching @125°C VGS = 15V VBus = 533V ID = 15A R G = 5Ω Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 15A, R G = 5Ω Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 15A, R G = 5Ω Test Conditions 10 13 83 ns 35 243 µJ 139 425 µJ 171 Min Tc = 25°C Tc = 80°C Typ 15 11 VGS = 0V, IS = - 15A IS = - 15A VR = 400V diS/dt = 100A/µs Max 25 250 290 3.9 ±100 11 Source - Drain diode ratings and characteristics Symbol Typ Tj = 25°C Tj = 125°C Max Unit A 1.2 6 Tj = 25°C 550 V V/ns ns Tj = 25°C 15 µC www.microsemi.com July, 2006 X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 15A di/dt ≤ 100A/µs VR ≤ VDSS Tj ≤ 150°C 2–6 APTC80H29T3G – Rev 1 Symbol APTC80H29T3G Thermal and package characteristics Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case Thermal Resistance Min RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 -40 -40 -40 2.5 Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 Typ 150 125 100 4.7 110 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K RT = Min R 25 Max 0.80 Typ 50 3952 Max Unit °C/W V °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–6 APTC80H29T3G – Rev 1 28 17 1 July, 2006 SP3 Package outline (dimensions in mm) APTC80H29T3G Typical performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.9 0.8 0.9 0.7 0.7 0.6 0.5 0.5 0.4 0.3 0.3 0.2 0.1 0.05 0.1 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 40 VGS =15&10V 6.5V 30 25 6V 20 5.5V 15 5V 10 4.5V 5 TJ =-55°C 30 20 TJ =125°C TJ =25°C 10 TJ =125°C 4V T J=-55°C 0 0 0 0 5 10 15 20 25 VDS , Drain to Source Voltage (V) 1 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) 8 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.4 16 Normalized to V GS=10V @ 7.5A 1.3 I D, DC Drain Current (A) VGS=10V 1.2 VGS=20V 1.1 1 0.9 14 12 10 8 6 4 2 0 0.8 0 5 10 15 20 I D, Drain Current (A) 25 30 25 50 75 100 125 150 TC, Case Temperature (°C) www.microsemi.com July, 2006 RDS(on) Drain to Source ON Resistance VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 40 4–6 APTC80H29T3G – Rev 1 ID, Drain Current (A) 35 ID, Drain Current (A) 50 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 50 100 150 Maximum Safe Operating Area Threshold Voltage vs Temperature 100 1.2 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) 1.0 0.9 0.8 0.7 -50 0 50 100 limited by RDSon 1ms 1 Single pulse TJ =150°C TC=25°C 1 1000 Coss 100 Crss 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=15A T J=25°C 14 V DS =160V 12 VDS=400V 10 8 VDS=640V 6 4 2 0 0 20 40 60 80 100 Gate Charge (nC) July, 2006 0 VGS, Gate to Source Voltage (V) Ciss 100ms 0 150 Capacitance vs Drain to Source Voltage 10000 100µs 10 TC, Case Temperature (°C) C, Capacitance (pF) V GS=10V ID= 7.5A www.microsemi.com 5–6 APTC80H29T3G – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTC80H29T3G APTC80H29T3G Delay Times vs Current Rise and Fall times vs Current 50 100 tf 40 V DS=533V RG=5Ω T J=125°C L=100µH 60 40 t r and tf (ns) td(on) 20 30 VDS=533V RG=5Ω T J=125°C L=100µH 20 10 0 0 5 10 15 20 I D, Drain Current (A) 25 5 600 500 Eon Switching Energy (µJ) 400 300 Eoff 200 25 100 VDS=533V ID=15A T J=125°C L=100µH 1000 Eoff 750 Eon 500 250 Eoff 0 0 5 10 15 20 ID, Drain Current (A) Operating Frequency vs Drain Current ZVS 300 ZCS 250 VDS=533V D=50% RG=5Ω T J=125°C T C=75°C 200 150 100 Hard switching 50 0 4 6 8 10 12 ID, Drain Current (A) 10 20 30 40 Gate Resistance (Ohms) 50 Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 400 350 0 25 14 100 TJ =150°C 10 TJ=25°C 1 0.2 0.6 1 1.4 1.8 V SD, Source to Drain Voltage (V) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6–6 July, 2006 Eon and Eoff (µJ) 1250 VDS=533V RG=5Ω TJ=125°C L=100µH 700 10 15 20 I D, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 800 Frequency (kHz) tr APTC80H29T3G – Rev 1 td(on) and td(off) (ns) td(off) 80