140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N6255 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Silicon NPN, To-39 packaged VHF Transistor 3.0 Watt Power Output @ 175 MHz Power Gain, GPE = 7.8 dB Efficiency = 50% 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: The 2N6255 is a silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier, pre-driver, driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO Parameter Collector-Emitter Value 18 Unit Vdc VCBO VEBO Collector-Base Voltage 36 Vdc Emitter-Base Voltage 4.0 Vdc IC Collector Current 1 A 5.0 28.5 Watts mW/ º C Thermal Data P D Total Device Dissipation @ TA = 25ºC Derate above 25ºC Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N6255 ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Symbol BVCES BVCEO BVEBO ICES ICBO Test Conditions Value Unit Min. Typ. Max. Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE =0Vdc) 36 - - Vdc Collector-Emitter Breakdown Voltage (IC=10 mAdc, IB=0) 18 - - Vdc Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) 4.0 - Collector Cutoff Current (VCE = 15 Vdc, VBE = 0 Vdc) - - 5.0 mA Emitter Cutoff Current (VCB = 15 Vdc, IE = 0) - - .25 mA 5.0 - - - 20 pF Vdc (on) HFE DC Current Gain (IC = 250 mAdc, VCE = 5.0 Vdc) DYNAMIC Symbol COB Test Conditions Output Capacitance (VCB = 12.5Vdc, f = 1.0 MHz Value - 15 FUNCTIONAL Symbol GPE ηC Test Conditions Power Gain Collector Efficiency Test Circuit-Figure 1 Pout = 3.0 W, VCC = 12.5Vdc f = 175 MHz Test Circuit-Figure 1 Pout = 3.0 W, VCC = 12.5Vdc f = 175 MHz Value Typ. Max. 7.8 - - dB 50 - - % Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Unit Min. 2N6255 12.5 Vdc C6 C5 RFC2 L2 C4 POUT (RL=50 OHMS) C1 L1 PIN (RS=50 OHMS) RFC1 C3 C2 Bead Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE, AND EFFICIENCY SPECIFICATIONS. C1,3: 2.0-50 pF ARCO 461 ELEMENCO C5: 1000 pF FEED THRU L1: 1 TURN #18 AWG ¼” I.D. RFC2: 0.15 uH MOLDED CHOKE C2,4: 5.0-80 pF ARCO 462 ELEMENCO C6: 5.0 uF L2: 2 1/2 TURNS #18 AWG ¼” I.D BEAD: FERROXCUBE 56-570-65/3B RFC1: 0.15 uH MOLDED CHOKE WITH BEAD ON GROUND LEG Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N6255 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.