ADPOW 2N6255

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
2N6255
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
Features
•
•
•
•
Silicon NPN, To-39 packaged VHF Transistor
3.0 Watt Power Output @ 175 MHz
Power Gain, GPE = 7.8 dB
Efficiency = 50%
1. Emitter
2. Base
3. Collector
TO-39
DESCRIPTION:
The 2N6255 is a silicon NPN transistor, designed for 12.5 volt VHF equipment. Applications include amplifier, pre-driver,
driver, and output stages. It is also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
VCEO
Parameter
Collector-Emitter
Value
18
Unit
Vdc
VCBO
VEBO
Collector-Base Voltage
36
Vdc
Emitter-Base Voltage
4.0
Vdc
IC
Collector Current
1
A
5.0
28.5
Watts
mW/ º C
Thermal Data
P
D
Total Device Dissipation @ TA = 25ºC
Derate above 25ºC
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N6255
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
(off)
Symbol
BVCES
BVCEO
BVEBO
ICES
ICBO
Test Conditions
Value
Unit
Min.
Typ.
Max.
Collector-Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE =0Vdc)
36
-
-
Vdc
Collector-Emitter Breakdown Voltage
(IC=10 mAdc, IB=0)
18
-
-
Vdc
Emitter-Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
4.0
-
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0 Vdc)
-
-
5.0
mA
Emitter Cutoff Current
(VCB = 15 Vdc, IE = 0)
-
-
.25
mA
5.0
-
-
-
20
pF
Vdc
(on)
HFE
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
DYNAMIC
Symbol
COB
Test Conditions
Output Capacitance
(VCB = 12.5Vdc, f = 1.0 MHz
Value
-
15
FUNCTIONAL
Symbol
GPE
ηC
Test Conditions
Power Gain
Collector Efficiency
Test Circuit-Figure 1
Pout = 3.0 W, VCC = 12.5Vdc
f = 175 MHz
Test Circuit-Figure 1
Pout = 3.0 W, VCC = 12.5Vdc
f = 175 MHz
Value
Typ.
Max.
7.8
-
-
dB
50
-
-
%
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
Unit
Min.
2N6255
12.5 Vdc
C6
C5
RFC2
L2
C4
POUT
(RL=50 OHMS)
C1
L1
PIN
(RS=50 OHMS)
RFC1
C3
C2
Bead
Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR GPE,
AND EFFICIENCY SPECIFICATIONS.
C1,3: 2.0-50 pF ARCO 461 ELEMENCO
C5: 1000 pF FEED THRU
L1: 1 TURN #18 AWG ¼” I.D.
RFC2: 0.15 uH MOLDED CHOKE
C2,4: 5.0-80 pF ARCO 462 ELEMENCO
C6: 5.0 uF
L2: 2 1/2 TURNS #18 AWG ¼” I.D
BEAD: FERROXCUBE 56-570-65/3B
RFC1: 0.15 uH MOLDED CHOKE WITH BEAD ON GROUND LEG
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
2N6255
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.