NTE322 Silicon NPN Transistor RF Power Output Description: The NTE322 is a silicon NPN RF power transistor in a TO202N type package designed for use in Citizen–Band and other high–frequency communications equipment operating to 30MHz. Higher breakdown voltages allow a high percentage of up–modulation in AM circuits. Features: D Output Power: 3.5W (Min) @ VCC = 13.6V D Power Gain: 11.5dB (Min) D High Collector Emitter Breakdown Voltage: V(BR)CES ≥ 65V D DC Current Gain: Linear to 500mA Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Storage Junction Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5°C/W Thermal Resistance, Junction to Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W Note 1. RthJA is measured with the device soldered into a typical printed circuit board. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector–Emitter Breakdown Voltage V(BR)CES IC = 150mA, VBE = 0, Note 2 65 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 3 – – V mA Collector Cutoff Current ICBO VCB = 50V, IE = 0 – – 0.01 hFE IC = 100mA, VCE = 10V, Note 3 10 – – Cob VCB = 12V, IE = 0, f = 1MHz – – 40 pF Common–Emitter Amplifier Power Gain GPE PO = 3.5W, VCC = 13.6V, f = 27MHz 11.5 – – dB Output Power PO PIN = 250mW, VCC = 13.6V, f = 27MHz 3.5 – – W PO = 3.5W, VCC = 13.6V, f = 27MHz, Note 4 – 70 – % f = 27MHz, Note 5 – 85 – % ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test η Collector Efficiency Percentage Up–Modulation Note 2. Pulsed thru a 25mH inductor Note 3. Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% RF PO 100 Note 4. η = (VCC) (IC) Note 5. Percentage Up–Modulation is measured by setting the Carrier Power (PC) to 3.5 Watts with VCC = 13.6V and noting the power input. Then the peak envelope power (PEP) is noted after doubling the original power input to simulate driver modulation (at a 25% duty cycle for thermal considerations) and raising the VCC to 25V (to simulate the modulating voltage). Percentage Up–Modulation is then determined by the relation: PEP 1/2 –1 100 Percentage Up–Modulation = PC 27MHz Test Circuit VCC 13.6V C5 C6 RFC2 L2 INPUT C1 C4 OUTPUT L1 C3 C2 RFC1 C1, C2 9.0 – 180pF ARCO 463 or Equivalent C3, C4 5.0 – 80pF ARCO 462 or Equivalent C5 0.02µF Ceramic Disc C6 0.1µF Ceramic Disc RFC1 4 Turns #30 Enameled Wire Wound on Ferroxcube Bead Type 56–590–65/3B RFC2 26 Turns #22 Enameled Wire (2 Layers – 13 Turns Each Layer) 1/4” Inner Diameter L1 0.22µH Molded Choke L2 0.68µH Molded Choke .380 (9.65) Max .050 (1.27) .160 (4.06) .280 (7.25) Max .128 (3.28) Dia .100 (2.54) .218 (5.55) E B C .995 (25.3) .475 (12.0) Min .100 (2.54) .200 (5.08) Collector Connected to Tab