APT1204R7BFLL
APT1204R7SFLL
1200V 3.5A 4.700Ω
POWER MOS 7
R
FREDFET
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
TO-247
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT1204R7BFLL_SFLL
UNIT
1200
Volts
Drain-Source Voltage
ID
Continuous Drain Current @ TC = 25°C
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
135
Watts
Linear Derating Factor
1.08
W/°C
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
1
Amps
14
TL
EAS
3.5
-55 to 150
°C
300
Amps
3.5
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
10
4
mJ
425
STATIC ELECTRICAL CHARACTERISTICS
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1200
Drain-Source On-State Resistance
2
(VGS = 10V, ID = 1.75A)
TYP
MAX
UNIT
Volts
4.70
Ohms
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
3-2004
BVDSS
Characteristic / Test Conditions
050-7390 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT1204R7 BFLL_SFLL
Characteristic
Test Conditions
MIN
TYP
MAX
716
900
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
132
200
Reverse Transfer Capacitance
f = 1 MHz
36
60
VGS = 10V
31
50
Crss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
3
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
VDD = 600V
4
5
ID = 3.5A @ 25°C
21
40
VGS = 15V
7
14
VDD = 600V
2
4
ID = 3.5A @ 25°C
20
30
RG = 1.6Ω
24
50
TYP
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
MIN
Characteristic / Test Conditions
3.5
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
14
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -ID 3.5A)
1.3
Volts
dv/
Peak Diode Recovery
18
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -ID 3.5A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
515
Q rr
Reverse Recovery Charge
(IS = -ID 3.5A, di/dt = 100A/µs)
Tj = 25°C
.5
Tj = 125°C
1.1
IRRM
Peak Recovery Current
(IS = -ID 3.5A, di/dt = 100A/µs)
Tj = 25°C
8.3
Tj = 125°C
11.5
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.90
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
40
0.9
0.2
0.1
0.05
0.02
Note:
0.01
0.01
SINGLE PULSE
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7390 Rev A
3-2004
D=0.5
0.05
t1
t2
0.005
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 69.39mH, RG = 25Ω, Peak IL = 3.5A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID3.5A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.1
UNIT
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
ID, DRAIN CURRENT (AMPERES)
Graph Deleted
APT1204R7 BFLL_SFLL
8
VGS =15,10 & 8V
7
7V
6
5
6.5V
4
6V
3
2
5.5V
1
5V
0
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
8
6
TJ = -55°C
TJ = +125°C
4
TJ = +25°C
2
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
3
2.5
2
1.5
1
0.5
0
25
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
1
2
3
4
5
6
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
I
D
= 0.5 I
D
V
GS
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
[Cont.]
= 10V
2.0
1.5
1.0
0.5
-50 -25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
0.0
GS
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
3.5
V
1.1
1.0
0.9
0.8
3-2004
0
1.40
0.7
0.6
-50 -25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7390 Rev A
ID, DRAIN CURRENT (AMPERES)
10
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS
14
OPERATION HERE
LIMITED BY RDS (ON)
100µS
1,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
10
5
1mS
1
TC =+25°C
TJ =+150°C
SINGLE PULSE
0.5
I =I
D
D
VDS=250V
VDS=400V
4
0
0
5
10 15 20 25 30 35 40 45
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
100
50
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
3
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
D PAK Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
TJ =+150°C
TJ =+25°C
TO-247 Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
VDS=100V
8
50
10
[Cont.]
12
Coss
100
IDR, REVERSE DRAIN CURRENT (AMPERES)
16
Ciss
500
10mS
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
APT1204R7 BFLL_SFLL
3,000
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
4.50 (.177) Max.
3-2004
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.46 (.018)
0.56 (.022) {3 Plcs}
050-7390 Rev A
13.41 (.528)
13.51 (.532)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated