APT55M85B2FLL
APT55M85LFLL
550V 59A 0.085Ω
POWER MOS 7
R
FREDFET
B2FLL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
T-MAX™
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT55M85
UNIT
550
Volts
59
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
VGSM
PD
TJ,TSTG
236
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
-55 to 150
Operating and Storage Junction Temperature Range
TL
1
59
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
Amps
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
550
Volts
59
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 29.5A)
TYP
MAX
0.085
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V)
250
UNIT
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
3-2003
BVDSS
Characteristic / Test Conditions
050-7231 Rev A
Symbol
APT55M85 B2FLL - LFLL
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
VGS = 0V
6590
Coss
Output Capacitance
VDS = 25V
1296
Crss
Reverse Transfer Capacitance
f = 1 MHz
91
VGS = 10V
157
VDD = 275V
ID = 59A @ 25°C
38
86
VGS = 15V
19
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
t d(on)
Turn-on Delay Time
tr
Rise Time
t d(off)
Turn-off Delay Time
tf
Fall Time
VDD = 275V
14
ID = 59A @ 25°C
41
RG = 0.6Ω
6
MAX
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
TYP
MAX
59
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
(Body Diode)
236
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -59A)
1.3
Volts
15
V/ns
dv/
Peak Diode Recovery
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -59A, di/dt = 100A/µs)
Tj = 25°C
270
Tj = 125°C
540
Q rr
Reverse Recovery Charge
(IS = -59A, di/dt = 100A/µs)
Tj = 25°C
1.8
Tj = 125°C
6.2
IRRM
Peak Recovery Current
(IS = -59A, di/dt = 100A/µs)
Tj = 25°C
16
Tj = 125°C
29
Amps
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.18
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
0.12
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7231 Rev A
3-2003
0.20
0.8
t1
0.3
t2
Duty Factor D = t1/t2
0.04
0.1
Peak TJ = PDM x ZθJC + TC
0.05
0
10-5
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 1.72mH, RG = 25Ω, Peak IL = 59A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID59A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.16
UNIT
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT55M85 B2FLL - LFLL
160
RC MODEL
0.0396
Power
(Watts)
0.0271F
0.0488
0.231F
0.0924
0.653F
Case temperature
ID, DRAIN CURRENT (AMPERES)
VGS=15 &10V
Junction
temp. ( ”C)
7.5V
120
7V
80
6.5V
40
6V
5.5V
5V
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
120
100
TJ = -55°C
80
60
40
TJ = +125°C
20
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
1.13
1.12
1.10
VGS=10V
VGS=20V
1.00
0.90
0.80
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
D
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.00
0.95
0.90
0.85
-50
= 29.5A
GS
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
1.05
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
2.5
V
1.10
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
3-2003
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO
= 10V @ 29.5A
GS
1.15
60
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
050-7231 Rev A
ID, DRAIN CURRENT (AMPERES)
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.14
APT55M85 B2FLL - LFLL
20,000
10,000
OPERATION HERE
LIMITED BY RDS (ON)
100
100µS
10
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
236
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
= 59A
14
VDS=110V
12
VDS=275V
VDS=440V
8
6
4
2
0
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
16
10
100
10
1
5 10
50 100
550
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
1,000
10mS
1
I
Ciss
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
4.50 (.177) Max.
050-7231 Rev A
3-2003
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
5.45 (.215) BSC
2-Plcs.
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
2.29 (.090)
2.69 (.106)
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.