APT20M16B2LL
APT20M16LLL
200V 100A 0.016Ω
POWER MOS 7
R
MOSFET
B2LL
®
T-MAX™
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
LLL
D
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
MAXIMUM RATINGS
Symbol
TO-264
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT20M16B2LL_LLL
UNIT
200
Volts
Drain-Source Voltage
7
ID
Continuous Drain Current
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
1
Amps
400
TL
EAS
100
@ TC = 25°C
-55 to 150
°C
300
Amps
100
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 50A)
TYP
MAX
Volts
0.016
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
Ohms
µA
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
6-2004
Characteristic / Test Conditions
050-7014 Rev C
Symbol
DYNAMIC CHARACTERISTICS
APT20M16 B2LL_LLL
Test Conditions
Characteristic
Symbol
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
2330
Reverse Transfer Capacitance
f = 1 MHz
145
VGS = 10V
140
VDD = 100V
65
C rss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 100A @ 25°C
tf
31
VDD = 100V
RG = 0.6Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
4
INDUCTIVE SWITCHING @ 25°C
6
850
VDD = 133V, VGS = 15V
6
ns
29
ID = 100A @ 25°C
Fall Time
nC
15
VGS = 15V
Turn-off Delay Time
pF
120
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
7220
VGS = 0V
3
MAX
ID = 100A, RG = 5Ω
930
INDUCTIVE SWITCHING @ 125°C
935
VDD = 133V, VGS = 15V
ID = 100A, RG = 5Ω
µJ
985
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
100
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID100A, dl S/dt = 100A/µs)
360
ns
Q rr
Reverse Recovery Charge (IS = -ID100A, dl S /dt = 100A/µs)
6.7
µC
dv/
dt
Peak Diode Recovery
dv/
400
(Body Diode)
1.3
(VGS = 0V, IS = -ID100A)
dt
5
Amps
Volts
5
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
MIN
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 0.60mH, RG = 25Ω, Peak IL = 100A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID100A di/dt ≤ 700A/µs VR ≤ 200V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 The maximum current is limited by lead temperature
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.7
0.12
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7014 Rev C
6-2004
0.20
0.16
0.3
0.1
0.05
0
10-5
t1
t2
0.04
SINGLE PULSE
10-4
°C/W
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT20M16 B2LL_LLL
300
VGS=15V
Junction
temp. (°C)
0.0271
Power
(watts)
0.0656
0.0859
0.00899F
0.0210F
0.293F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
10V
250
9V
200
8.5V
150
8V
100
7.5V
7V
50
6.5V
Case temperature. (°C)
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
200
150
100
TJ = +25°C
50
TJ = +125°C
0
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
120
100
Lead Limited
GS
1.3
1.2
1.1
VGS=10V
1.0
0.9
VGS=20V
0.8
0
60
40
20
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
1.05
1.00
0.95
0.90
-50
= 50A
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
20
40
60 80 100 120 140 160
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.1
1.0
0.9
0.8
6-2004
80
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
NORMALIZED TO
= 10V @ 50A
V
1.15
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.4
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7014 Rev C
250
TJ = -55°C
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
300
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
10,000
100µS
50
1mS
10
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
I
= 100A
D
14
VDS=40V
12
10
VDS=100V
8
VDS=160V
6
4
2
0
0
20
40 60 80 100 120 140 160 180 200
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
DD
R
G
100
TJ =+150°C
50
TJ =+25°C
10
5
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
DD
R
G
= 133V
= 5Ω
T = 125°C
L = 100µH
= 133V
= 5Ω
J
L = 100µH
40
30
td(on)
100
tf
80
60
tr
40
20
10
40
0
80
100 120 140 160
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
60
40
V
E ON includes
diode reverse recovery
1000
Eon
I
3000
Eoff
J
L = 100µH
500
20
60
3500
= 133V
= 5Ω
T = 125°C
1500
80
100 120 140 160
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
DD
D
= 133V
= 100A
T = 125°C
J
SWITCHING ENERGY (µJ)
20
2000
Eon and Eoff (µJ)
Crss
J
tr and tf (ns)
td(on) and td(off) (ns)
V
20
6-2004
500
120
T = 125°C
0
1,000
140
td(off)
80
50
Coss
160
90
60
5,000
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
220
100
70
Ciss
100
1
10
100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
100
1
050-7014 Rev C
APT20M16 B2LL_LLL
20,000
OPERATION HERE
LIMITED BY RDS (ON)
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
400
L = 100µH
E ON includes
2500
Eoff
diode reverse recovery
2000
Eon
1500
1000
500
0
20
40
60
80
100 120 140 160
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT20M16 B2LL_LLL
90%
10%
Gate Voltage
Gate Voltage
T 125°C
J
td(off)
td(on)
Drain Voltage
tf
tr
90%
90%
Drain Current
10%
0
5%
5%
T 125°C
J
10%
Drain Current
Drain Voltage
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT100S20
V DS
ID
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline (B2LL)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline (LLL)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
6-2004
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7014 Rev C
Drain
Drain
20.80 (.819)
21.46 (.845)