APT5014BLL APT5014SLL 500V 35A 0.140Ω POWER MOS 7 R MOSFET D3PAK TO-247 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT5014BLL-SLL UNIT Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 35 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 403 Watts Linear Derating Factor 3.22 W/°C VDSS PD TJ,TSTG 1 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 Amps 140 -55 to 150 °C 300 Amps 35 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 500 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, 17.5A) TYP MAX Volts 0.140 Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 6-2004 Characteristic / Test Conditions 050-7006 Rev B Symbol DYNAMIC CHARACTERISTICS Symbol APT5014 BLL - SLL Test Conditions Characteristic MIN TYP C iss Input Capacitance Coss Output Capacitance VDS = 25V 704 Reverse Transfer Capacitance f = 1 MHz 50 VGS = 10V 72 VDD = 250V 20 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr ID = 35A @ 25°C td(off) tf 6 VDD = 250V RG = 1.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 3 INDUCTIVE SWITCHING @ 25°C 6 325 VDD = 333V, VGS = 15V 6 ns 23 ID = 35A @ 25°C Fall Time nC 11 VGS = 15V Turn-off Delay Time pF 36 RESISTIVE SWITCHING Rise Time UNIT 3261 VGS = 0V 3 MAX ID = 35A, RG = 5Ω 249 INDUCTIVE SWITCHING @ 125°C 545 VDD = 333V, VGS = 15V ID = 35A, RG = 5Ω µJ 288 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS MIN Characteristic / Test Conditions TYP MAX 35 Continuous Source Current (Body Diode) 140 ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -35A, dl S/dt = 100A/µs) 510 Q rr Reverse Recovery Charge (IS = -35A, dl S/dt = 100A/µs) 10 dv/ dt Peak Diode Recovery dv/ (Body Diode) 1.3 (VGS = 0V, IS = -35A) dt UNIT Amps Volts ns µC 8 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.31 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 2.12mH, RG = 25Ω, Peak IL = 35A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -35A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.25 0.7 0.20 0.5 0.15 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7006 Rev B 6-2004 0.35 0.30 0.3 0.10 t1 t2 0.05 0 SINGLE PULSE 0.1 0.05 10-5 10-4 °C/W Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 Typical Performance Curves APT5014 BLL_SLL 100 RC MODEL Junction temp. (°C) 0.119 0.0135F Power (watts) 0.191 0.319F Case temperature. (°C) ID, DRAIN CURRENT (AMPERES) 15 &10V 8V 80 60 7V 6.5V 20 6V 20 5.5V 5V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS 80 60 40 TJ = +125°C TJ = +25°C 20 TJ = -55°C 0 1 2 3 4 5 6 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 30 25 20 15 10 5 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 1.10 VGS=10V 1.05 VGS=20V 1.0 0.95 0.90 0 2.5 D V 1.05 1.00 0.95 0.90 0.85 -50 = 17.5A GS = 10V 1.5 1.0 0.5 0.0 -50 1.10 1.2 I 2.0 10 20 30 40 50 60 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 NORMALIZED TO = 10V @ 17.5A GS 1.15 1.15 35 0 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 6-2004 0 1.2 050-7006 Rev B ID, DRAIN CURRENT (AMPERES) 100 RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL Typical Performance Curves APT5014 BLL_SLL 10,000 140 Ciss 50 100µS 10 1mS TC =+25°C TJ =+150°C SINGLE PULSE 1 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) = 35A 14 12 VDS=100V 10 VDS=250V 8 VDS=400V 6 4 2 0 0 td(off) TJ =+150°C TJ =+25°C 10 5 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE V = 333V DD R G = 5Ω T = 125°C V DD R G = 333V = 5Ω T = 125°C J 30 L = 100µH 20 tf L = 100µH 50 tr and tf (ns) 40 40 30 20 tr td(on) 0 1000 10 10 0 30 40 50 60 ID (A) FIGURE 14, DELAY TIMES vs CURRENT V DD R G SWITCHING ENERGY (µJ) 50 J 10 6-2004 100 60 20 30 40 50 60 ID (A) FIGURE 15, RISE AND FALL TIMES vs CURRENT J EON includes diode reverse recovery. 600 Eon 400 200 Eoff 10 I DD D 20 = 333V = 35A T = 125°C J L = 100µH 0 10 V 1200 T = 125°C 800 0 1400 = 333V = 5Ω 20 30 40 50 60 ID (A) FIGURE 16, SWITCHING ENERGY vs CURRENT SWITCHING ENERGY (µJ) td(on) and td(off) (ns) 50 050-7006 Rev B 200 70 60 0 Crss 0 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 100 10 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 16 D Coss 10mS 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I 1,000 Eoff L = 100µH E ON includes 1000 diode reverse recovery. 800 Eon 600 400 200 0 0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms) FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE Typical Performance Curves APT5014 BLL_SLL Gate Voltage 10 % 90% T = 125 C J td(on) Gate Voltage t T = 125 C J d(off) tr Drain Voltage 90% 5% Drain Current 90% tf 10 % 10% 0 Drain Voltage Switching Energy Drain Current Switching Energy Figure 19, Turn-off Switching Waveforms and Definitions Figure 18, Turn-on Switching Waveforms and Definitions APT30DF60 V DS ID V DD G D.U.T. Figure 20, Inductive Switching Test Circuit 3 TO-247 Package Outline 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) D PAK Package Outline 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05 (.632) Revised 4/18/95 Drain 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15 (.045) 13.79 (.543) 13.99 (.551) 13.41 (.528) 13.51 (.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.21 (.087) 2.59 (.102) 19.81 (.780) 20.32 (.800) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) Gate Drain Source 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Source Drain Gate Dimensions in Millimeters (Inches) APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Drain) and Leads are Plated 050-7006 Rev B 0.46 (.018) 0.56 (.022) {3 Plcs} 6-2004 3.50 (.138) 3.81 (.150)