APTGF15H120T3 Full - Bridge NPT IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 13 14 19 Q2 22 7 23 8 CR2 26 Q3 11 10 CR4 Features • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring Q4 4 27 3 29 31 30 15 32 16 R1 28 27 26 25 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • Easy paralleling due to positive TC of VCEsat • Each leg can be easily paralleled to achieve a phase leg of twice the current capability Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 1200 25 15 60 ±20 140 Tj = 125°C 30A@1150V TC = 25°C TC = 80°C TC = 25°C Unit V September, 2004 CR3 CR1 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF15H120T3 – Rev 0 Q1 18 VCES = 1200V IC = 15A @ Tc = 80°C APTGF15H120T3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min BVCES VGE = 0V, IC = 500µA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T VGE =15V j = 25°C IC = 15A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V 1200 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min ICES Collector - Emitter Breakdown Voltage Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y 2.5 Typ Max Unit 1 1 3.2 4.0 500 V µA mA 4 VGE = 15V VBus = 300V IC =15A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 15A R G = 33Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 15A R G = 33Ω Typ 1000 150 70 99 10 70 60 50 315 3.7 V 6 400 V nA Max Unit pF nC ns 30 60 50 356 40 2 1 ns mJ X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1 VRRM Test Conditions Min Typ Max 1200 Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VR=1200V IF(A V) Maximum Average Forward Current 50% duty cycle VF Diode Forward Voltage IF = 15A VGE = 0V trr Reverse Recovery Time Qrr Reverse Recovery Charge IF = 15A VR = 600V di/dt =400A/µs V Tj = 25°C Tj = 125°C 250 500 Tc = 80°C Tj = 25°C Tj = 125°C 2.9 2.6 Tj = 125°C 0.5 Tj = 25°C 0.4 Tj = 125 1.2 APT website – http://www.advancedpower.com Unit 15 µA A 3.4 September, 2004 Symbol Characteristic V µs µC 2-6 APTGF15H120T3 – Rev 0 Reverse diode ratings and characteristics APTGF15H120T3 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = R 25 Max Unit kΩ K Min Typ Max 0.9 2.0 Unit T: Thermistor temperature Thermal and package characteristics VISOL TJ TSTG TC Torque Wt Typ 68 4080 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T Symbol Characteristic RthJC Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 °C/W V 150 125 100 4.7 110 °C N.m g 12 APT website – http://www.advancedpower.com 3-6 APTGF15H120T3 – Rev 0 28 17 1 September, 2004 Package outline APTGF15H120T3 Typical Performance Curve Output characteristics (V GE=15V) 250µs Pulse Test < 0.5% Duty cycle 60 TJ=25°C 50 40 30 TJ=125°C 20 10 14 12 TJ=25°C 10 8 6 4 T J=125°C 2 1 2 3 4 5 6 7 VCE , Collector to Emitter Voltage (V) 0 8 VGE , Gate to Emitter Voltage (V) Transfer Characteristics 70 250µs Pulse Test < 0.5% Duty cycle 60 50 40 30 20 TJ =125°C 10 TJ =25°C 0 2.5 5 7.5 10 12.5 VGE, Gate to Emitter Voltage (V) TJ = 125°C 250µs Pulse Test < 0.5% Duty cycle 8 7 Ic=30A 6 5 Ic=15A 4 3 2 Ic=7.5A 1 0 9 10 11 12 13 14 15 2 2.5 3 3.5 Gate Charge IC = 15A TJ = 25°C 16 V CE=240V V CE =600V 14 12 V CE=960V 10 8 6 4 2 0 0 16 6 20 40 60 80 100 120 On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle V G E = 15V 5 3 Ic=7.5A 2 1 0 -50 40 Ic, DC Collector Current (A) 1.05 1.00 0.95 0.90 0.85 0.80 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 35 September, 2004 Breakdown Voltage vs Junction Temp. 1.10 Ic=30A Ic=15A 4 VGE , Gate to Emitter Voltage (V) Collector to Emitter Breakdown Voltage (Normalized) 1.5 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 9 1 18 15 VCE, Collector to Emitter Voltage (V) 0 0.5 VCE, Collector to Emitter Voltage (V) 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTGF15H120T3 – Rev 0 0 Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle 0 0 V CE, Collector to Emitter Voltage (V) Output Characteristics (VGE=10V) 16 Ic, Collector Current (A) Ic, Collector Current (A) 70 APTGF15H120T3 Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V RG = 33Ω 70 65 V GE = 15V 60 55 50 0 5 10 15 20 25 30 400 VGE=15V, TJ=125°C 350 300 VCE = 600V RG = 33Ω 200 35 0 5 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 600V RG = 33Ω 120 45 tf, Fall Time (ns) tr, Rise Time (ns) 20 25 30 35 Current Fall Time vs Collector Current 80 V GE=15V 40 0 0 TJ = 125°C 40 35 TJ = 25°C 30 5 10 15 20 25 30 VCE = 600V, VGE = 15V, RG = 33Ω 20 35 0 5 10 15 20 25 30 ICE, Collector to Emitter Current (A) ICE, Collector to Emitter Current (A) VCE = 600V RG = 33Ω 7 6 T J=125°C, VGE =15V 5 4 T J=25°C, VGE=15V 3 2 1 0 0 5 10 15 20 25 30 ICE , Collector to Emitter Current (A) T J = 125°C 1.5 TJ = 25°C 1 0.5 0 35 0 5 10 15 20 25 30 ICE , Collector to Emitter Current (A) 35 Minimum Switching Safe Operating Area 35 Eon, 15A 5 4 Eoff, 15A 3 2 1 0 30 September, 2004 IC, Collector Current (A) VCE = 600V VGE = 15V TJ= 125°C 6 VCE = 600V VGE = 15V RG = 33Ω 2 Switching Energy Losses vs Gate Resistance 7 35 Turn-Off Energy Loss vs Collector Current 2.5 Turn-On Energy Loss vs Collector Current 8 Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 15 50 25 Switching Energy Losses (mJ) 10 ICE, Collector to Emitter Current (A) 160 8 VGE =15V, T J=25°C 250 25 20 15 10 5 0 0 20 40 60 80 Gate Resistance (Ohms) 100 120 0 400 800 1200 VCE, Collector to Emitter Voltage (V) APT website – http://www.advancedpower.com 5-6 APTGF15H120T3 – Rev 0 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 75 APTGF15H120T3 Cies 1000 Coes 100 Cres 10 0 10 20 30 40 VCE , Collector to Emitter Voltage (V) Thermal Impedance (°C/W) 120 100 80 ZVS V CE = 600V D = 50% RG = 33Ω TJ = 125°C TC = 75°C 60 40 ZCS Hard switching 20 0 50 0 5 10 15 20 IC, Collector Current (A) 25 Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1 0.9 Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 0.9 0.8 0.7 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.00001 0.5 0.3 0.1 Single Pulse 0.05 0.0001 0.001 0.01 0.1 1 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTGF15H120T3 – Rev 0 September, 2004 Rectangular Pulse Duration (Seconds)