APT100GF60JU3 ISOTOP® Buck chopper NPT IGBT C VCES = 600V IC = 100A @ Tc = 80°C Application · AC and DC motor control · Switched Mode Power Supplies G Features · E A · · · A E - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits · Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Easy paralleling due to positive TC of VCEsat C G Non Punch Through (NPT) THUNDERBOLT IGBT® ISOTOPÒ Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage TC = 25°C Max ratings 600 120 100 320 ±20 416 TC = 80°C 30 TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation IFAV Maximum Average Forward Current Duty cycle=0.5 IFRMS RMS Forward Current (Square wave, 50% duty) 39 Unit V A V W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-9 APT100GF60JU3– Rev 0 April, 2004 Symbol VCES IC1 IC2 ICM VGE PD APT100GF60JU3 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 100µA Tj = 25°C VGE = 0V VCE = 600V Tj = 125°C T j = 25°C VGE =15V IC = 100A Tj = 125°C VGE = VCE, IC = 1mA VGE = ±20V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ Max 600 2.0 2.2 3 100 1000 2.5 Unit V µA V 5 ±150 V nA Max Unit Dynamic Characteristics Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy VGS = 15V VBus = 300V IC = 100A Resistive Switching (25°C) VGE = 15V VBus = 400V IC = 100A RG = 5W Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 100A RG = 5W APT website – http://www.advancedpower.com Typ 4300 470 400 330 290 200 26 25 150 30 3.35 2.85 26 25 170 40 4.3 3.5 pF nC ns mJ ns mJ 2-9 APT100GF60JU3– Rev 0 April, 2004 Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr APT100GF60JU3 Diode ratings and characteristics Symbol VF Characteristic Diode Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance Reverse Recovery Time trr Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/µs Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 23 IF = 30A VR = 400V di/dt =200A/µs Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 85 160 4 8 130 700 70 1300 30 Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/µs Min Typ 1.6 1.9 1.4 Max 1.8 V 250 500 44 Tj = 125°C Unit µA pF ns A nC ns nC A Thermal and package characteristics RthJC RthJA VISOL TJ,TSTG TL Torque Wt Min Typ IGBT Diode Junction to Case Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight APT website – http://www.advancedpower.com 2500 -55 Max 0.3 1.21 20 Unit °C/W V 150 300 1.5 29.2 °C N.m g 3-9 APT100GF60JU3– Rev 0 April, 2004 Symbol Characteristic APT100GF60JU3 Typical IGBT Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300 Tc=-55°C 250µs Pulse Test < 0.5% Duty cycle 300 250 Ic, Collector Current (A) Tc=25°C 200 150 Tc=125°C 100 50 250µs Pulse Test < 0.5% Duty cycle 250 200 Tc=25°C 150 100 Tc=125°C 50 0 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) 0 4 1 4 Gate Charge VGE, Gate to Emitter Voltage (V) 200 150 100 TJ=25°C 50 TJ=125°C TJ=-55°C 0 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 8 TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=200A 5 4 3 Ic=100A 2 Ic=50A 1 0 6 8 10 12 14 VGE, Gate to Emitter Voltage (V) IC = 100A TJ = 25°C 16 14 VCE=120V VCE=300V 12 10 VCE=480V 8 6 4 2 0 10 0 VCE, Collector to Emitter Voltage (V) Ic, Collector Current (A) 3 18 250µs Pulse Test < 0.5% Duty cycle 250 VCE, Collector to Emitter Voltage (V) 2 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 300 50 100 150 200 250 Gate Charge (nC) 300 350 On state Voltage vs Junction Temperature 4 3.5 Ic=200A 3 2.5 Ic=100A 2 1.5 Ic=50A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 -50 16 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 160 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) Tc=-55°C 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-9 APT100GF60JU3– Rev 0 April, 2004 Ic, Collector Current (A) 350 APT100GF60JU3 Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) 30 VGE = 15V 25 Tj = 25°C VCE = 400V RG = 5Ω 20 15 25 50 75 100 125 ICE, Collector to Emitter Current (A) 250 200 VGE=15V, TJ=125°C 150 100 50 150 25 Current Rise Time vs Collector Current 100 125 150 Current Fall Time vs Collector Current VCE = 400V RG = 5Ω 60 VCE = 400V, VGE = 15V, RG = 5Ω tf, Fall Time (ns) tr, Rise Time (ns) 75 80 VGE=15V, TJ=125°C 40 20 0 60 TJ = 125°C 40 20 TJ = 25°C 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 25 Eoff, Turn-off Energy Loss (mJ) VCE = 400V RG = 5Ω TJ=125°C, VGE=15V 4 TJ=25°C, VGE=15V 2 0 0 25 50 75 100 125 VCE = 400V VGE = 15V RG = 5Ω 5 4 2 1 0 150 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Eoff, 100A 8 Eon, 100A Eoff, 50A 4 Eon, 50A 0 0 10 20 30 40 Gate Resistance (Ohms) 10 Switching Energy Losses (mJ) 12 Eoff, 200A 50 150 Switching Energy Losses vs Junction Temp. Switching Energy Losses vs Gate Resistance 16 Eon, 200A TJ = 125°C TJ = 25°C 3 ICE, Collector to Emitter Current (A) VCE = 400V VGE = 15V TJ= 125°C 150 6 8 6 50 75 100 125 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current Eon, Turn-On Energy Loss (mJ) 50 ICE, Collector to Emitter Current (A) 80 Switching Energy Losses (mJ) VGE=15V, TJ=25°C VCE = 400V RG = 5Ω VCE = 400V VGE = 15V RG = 5Ω 8 Eon, 200A Eoff, 200A 6 Eon, 100A 4 Eoff, 100A 2 Eoff, 50A Eon, 50A 0 0 25 50 75 100 TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 125 5-9 APT100GF60JU3– Rev 0 April, 2004 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APT100GF60JU3 Capacitance vs Collector to Emitter Voltage Minimum Switching Safe Operating Area 10000 350 IC, Collector Current (A) C, Capacitance (pF) Cies 1000 Coes Cres 100 300 250 200 150 100 50 0 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 0 50 200 400 600 800 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.7 0.2 0.1 0.5 0.3 0.05 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 120 1 10 Operating Frequency vs Collector Current VCE = 400V D = 50% RG = 5Ω TJ = 125°C 100 80 60 40 20 0 20 40 60 80 100 IC, Collector Current (A) APT website – http://www.advancedpower.com 120 6-9 APT100GF60JU3– Rev 0 April, 2004 0.15 Fmax, Operating Frequency (kHz) Thermal Impedance (°C/W) 0.35 APT100GF60JU3 APT website – http://www.advancedpower.com 7-9 APT100GF60JU3– Rev 0 April, 2004 Typical Diode Performance Curve APT website – http://www.advancedpower.com 8-9 APT100GF60JU3– Rev 0 April, 2004 APT100GF60JU3 APT100GF60JU3 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 1.95 (.077) 2.14 (.084) Anode 30.1 (1.185) 30.3 (1.193) Collector * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Emitter Gate ISOTOP® is a Registered Trademark of SGS Thomson APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 9-9 APT100GF60JU3– Rev 0 April, 2004 Dimensions in Millimeters and (Inches)