APTGF90SK60TG Buck chopper NPT IGBT Power Module VBUS NTC2 Q1 VCES = 600V IC = 90A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Features • E1 OUT • • 0/VBU S SENSE 0/VBU S NTC1 • • 0/VBUS SENSE VBUS E1 G1 OUT OUT 0/VBUS NTC2 0/VBUS SENSE NTC1 Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections Internal thermistor for temperature monitoring High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS compliant Absolute maximum ratings Symbol VCES Non Punch Through (NPT) THUNDERBOLT IGBT ® Tc = 25°C Max ratings 600 110 90 315 ±20 416 Tj = 150°C 315A @ 600V Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF90SK60TG – Rev 0 September, 2005 G1 APTGF90SK60TG Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Test Conditions VGE = 0V Tj = 25°C VCE = 600V Tj = 125°C T VGE =15V j = 25°C IC = 90A Tj = 125°C VGE = VCE, IC = 1mA VGE = 20 V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min 2.0 2.2 3 VGS = 15V VBus = 300V IC = 90A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 90A RG = 5 Ω Turn-off Switching Energy Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current IF DC Forward current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ 4300 470 400 330 290 200 26 25 150 30 3.35 2.85 26 25 170 40 4.3 Max 100 1000 2.5 Unit 5 ±150 V nA Max Unit Test Conditions VR=600V Min 600 Tj = 25°C Tj = 125°C Tj = 125°C IF = 100A VR = 400V di/dt =200A/µs Tj = 25°C 160 Tj = 125°C 220 Tj = 25°C 290 Tj = 125°C 1530 APT website – http://www.advancedpower.com V nC ns mJ ns mJ Max 100 500 100 1.6 2 1.3 T c = 80°C IF = 100A IF = 200A IF = 100A Typ µA pF 3.5 Chopper diode ratings and characteristics IRM Typ Unit V µA A 2 V ns nC 2-6 APTGF90SK60TG – Rev 0 September, 2005 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics APTGF90SK60TG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ To heatsink M5 Max 0.3 0.55 2500 -40 -40 -40 1.5 RT = Min R 25 °C/W V 150 125 100 4.7 160 Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.15 K Unit Typ 50 3952 Max °C N.m g Unit kΩ K T: Thermistor temperature 1 1 RT : Thermistor value at T exp B 25 / 85 − T25 T APT website – http://www.advancedpower.com 3-6 APTGF90SK60TG – Rev 0 September, 2005 SP4 Package outline (dimensions in mm) APTGF90SK60TG Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 300 250µs Pulse Test < 0.5% Duty cycle 300 Tc=-55°C 250 Ic, Collector Current (A) Tc=25°C 200 150 Tc=125°C 100 50 250µs Pulse Test < 0.5% Duty cycle 250 200 Tc=25°C 150 100 Tc=125°C 50 0 0 0 1 2 3 VCE, Collector to Emitter Voltage (V) 0 4 1 2 Gate Charge 250µs Pulse Test < 0.5% Duty cycle TJ=-55°C VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 4 18 250 200 150 100 TJ=25°C 50 TJ=125°C TJ=-55°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. 8 TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=180A 5 4 3 Ic=90A 2 Ic=45A 1 0 6 8 10 12 14 VGE, Gate to Emitter Voltage (V) 14 VCE =300V 12 10 VCE=480V 8 6 4 2 0 0 16 VCE=120V IC = 90A TJ = 25°C 16 10 VCE, Collector to Emitter Voltage (V) 0 VCE, Collector to Emitter Voltage (V) 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 300 50 100 150 200 250 Gate Charge (nC) 300 350 On state Voltage vs Junction Temperature 4 3.5 Ic=180A 3 2.5 Ic=90A 2 1.5 Ic=45A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Breakdown Voltage vs Junction Temp. DC Collector Current vs Case Temperature 160 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) Tc=-55°C 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 140 120 100 80 60 40 20 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTGF90SK60TG – Rev 0 September, 2005 Ic, Collector Current (A) 350 APTGF90SK60TG Turn-Off Delay Time vs Collector Current VGE = 15V 30 25 Tj = 25°C V CE = 400V R G = 5Ω 20 15 25 50 75 100 125 150 td(off), Turn-Off Delay Time (ns) 250 V GE=15V, TJ=125°C 200 150 100 50 25 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current 100 125 150 V CE = 400V, V GE = 15V, RG = 5Ω V GE=15V, TJ=125°C tf, Fall Time (ns) tr, Rise Time (ns) VCE = 400V RG = 5Ω 40 20 60 TJ = 125°C 40 20 TJ = 25°C 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 25 Eoff, Turn-off Energy Loss (mJ) V CE = 400V RG = 5Ω 6 TJ=125°C, VGE=15V 4 TJ=25°C, V GE =15V 2 0 0 25 50 75 100 125 V CE = 400V V GE = 15V RG = 5Ω 5 4 TJ = 25°C 2 1 0 0 25 Eoff, 90A Eoff, 45A 4 Eon, 45A 0 10 20 30 Gate Resistance (Ohms) 40 75 100 125 150 50 Switching Energy Losses vs Junction Temp. Switching Energy Losses (mJ) Eoff, 180A Eon, 90A 0 50 ICE, Collector to Emitter Current (A) Eon, 180A 8 TJ = 125°C 3 150 Switching Energy Losses vs Gate Resistance 16 12 150 6 ICE, Collector to Emitter Current (A) VCE = 400V VGE = 15V TJ= 125°C 50 75 100 125 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 8 Eon, Turn-On Energy Loss (mJ) 75 Current Fall Time vs Collector Current 80 0 Switching Energy Losses (mJ) 50 ICE, Collector to Emitter Current (A) 80 60 V GE =15V, TJ=25°C VCE = 400V RG = 5Ω 10 VCE = 400V V GE = 15V RG = 5Ω 8 Eon, 180A Eoff, 180A 6 4 Eon, 90A Eoff, 90A 2 Eoff , 45A Eon, 45A 0 0 25 50 75 100 125 TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 5-6 APTGF90SK60TG – Rev 0 September, 2005 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 35 APTGF90SK60TG Capacitance vs Collector to Emitter Voltage Minimum Switching Safe Operating Area 10000 350 IC , Collector Current (A) C, Capacitance (pF) Cies 1000 Coes Cres 100 300 250 200 150 100 50 0 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 0 50 200 400 600 800 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.3 0.25 0.9 0.7 0.2 0.15 0.1 0.05 0 0.5 0.3 0.1 0.05 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Fmax, Operating Frequency (kHz) 0.00001 Single Pulse 200 1 10 Operating Frequency vs Collector Current ZVS 160 120 ZCS VCE = 400V D = 50% RG = 5Ω TJ = 125°C TC = 75°C 80 40 Hard switching 0 20 40 60 80 100 IC, Collector Current (A) 120 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTGF90SK60TG – Rev 0 September, 2005 Thermal Impedance (°C/W) 0.35