APTGF50DH120T Asymmetrical - Bridge NPT IGBT Power Module VBUS VBUS SENSE Q1 G1 CR3 E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBU S SENSE NTC1 NTC2 0/VBU S VBUS SENSE G4 VBUS 0/VBUS E1 0/VBUS SENSE G1 OUT2 E4 OUT1 NTC2 NTC1 VCES = 1200V IC = 50A @ Tc = 80°C Application · Welding converters · Switched Mode Power Supplies · Switched Reluctance Motor Drives Features · Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated · Kelvin emitter for easy drive · Very low stray inductance - Symmetrical design - Lead frames for power connections · Internal thermistor for temperature monitoring · High level of integration Benefits · Outstanding performance at high frequency operation · Stable temperature behavior · Very rugged · Direct mounting to heatsink (isolated package) · Low junction to case thermal resistance · Solderable terminals both for power and signal for easy PCB mounting · Easy paralleling due to positive TC of VCEsat · Low profile Absolute maximum ratings IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area Tc = 25°C Tc = 80°C Tc = 25°C Tc = 25°C Tj = 150°C Max ratings 1200 75 50 150 ±20 312 150A @ 1200V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-6 APTGF50DH120T – Rev1 March, 2004 Symbol VCES APTGF50DH120T All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions VGE = 0V, IC = 500 µA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C VGE =15V Tj = 25°C IC = 50A Tj = 125°C VGE = VCE, IC = 1 mA VGE = 20 V, VCE = 0V Min 1200 Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 3.2 4.0 4.5 Max 500 2500 3.7 Unit V µA V 6.5 100 V nA Typ 3450 330 220 330 35 200 35 65 320 30 5.4 2.3 35 65 360 40 6.9 3.05 Max Unit Max Tj = 125°C Typ 100 2.0 2.3 1.8 Tj = 25°C 420 Tj = 125°C 580 Tj = 25°C 1250 Tj = 125°C 5350 Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Eon Eoff Td(on) Tr Td(off) Tf Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v VGS = 15V VBus = 600V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 W Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 5 W pF nC ns mJ ns mJ Reverse diode ratings and characteristics VF Reverse Recovery Time Qrr Reverse Recovery Charge 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 800V di/dt =200A/µs IF = 100A VR = 800V di/dt =200A/µs Diode Forward Voltage trr Test Conditions Min Tc = 70°C Unit A 2.5 V ns nC u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1 APT website – http://www.advancedpower.com 2-6 APTGF50DH120T – Rev1 March, 2004 Symbol Characteristic Maximum Average Forward Current IF(AV) APTGF50DH120T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Typ IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight Max 0.4 0.6 2500 Unit °C/W V -40 -40 -40 150 125 100 4.7 160 M5 °C N.m g Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/85 T25 = 298.16 K RT = Min Typ 68 4080 Max Unit kW K R25 T: Thermistor temperature é æ 1 1 öù RT: Thermistor value at T expê B25 / 85 çç - ÷÷ú è T25 T øû ë APT website – http://www.advancedpower.com 3-6 APTGF50DH120T – Rev1 March, 2004 Package outline APTGF50DH120T Typical Performance Curve Output characteristics (VGE=15V) 250µs Pulse Test < 0.5% Duty cycle 120 TJ=125°C 80 40 TJ=25°C 30 20 TJ=125°C 10 2 4 6 VCE, Collector to Emitter Voltage (V) 0 8 1 2 3 VCE, Collector to Emitter Voltage (V) Gate Charge VGE, Gate to Emitter Voltage (V) Transfer Characteristics 300 250µs Pulse Test < 0.5% Duty cycle 250 200 150 100 TJ=125°C 50 TJ=25°C 0 0 4 8 12 VGE, Gate to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=50A 4 3 2 Ic=25A 1 0 9 14 VCE=600V 12 10 VCE=960V 8 6 4 2 0 50 100 150 200 250 300 350 Gate Charge (nC) Ic=100A 5 VCE=240V IC = 50A TJ = 25°C 16 0 VCE, Collector to Emitter Voltage (V) 8 18 16 On state Voltage vs Gate to Emitter Volt. 9 4 10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V) On state Voltage vs Junction Temperature 6 3 1 0 90 1.15 80 Ic, DC Collector Current (A) 1.20 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 Ic=25A 2 -50 Breakdown Voltage vs Junction Temp. Ic=100A Ic=50A 4 16 1.10 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 5 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 70 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) APT website – http://www.advancedpower.com 4-6 APTGF50DH120T – Rev1 March, 2004 0 Ic, Collector Current (A) 40 0 0 VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle TJ=25°C 160 Collector to Emitter Breakdown Voltage (Normalized) Output Characteristics (VGE=10V) 50 Ic, Collector Current (A) Ic, Collector Current (A) 200 APTGF50DH120T Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 45 VCE = 600V RG = 5Ω 40 VGE = 15V 35 30 25 0 25 50 75 100 400 VGE=15V, TJ=125°C 350 300 250 VCE = 600V RG = 5Ω 200 125 0 ICE, Collector to Emitter Current (A) 25 50 75 100 125 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current Current Fall Time vs Collector Current 180 50 VCE = 600V RG = 5Ω 140 tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, TJ=25°C 100 VGE=15V 60 TJ = 125°C 40 30 TJ = 25°C VCE = 600V, VGE = 15V, RG = 5Ω 20 20 125 VCE = 600V RG = 5Ω 24 TJ=125°C, VGE=15V 20 16 12 TJ=25°C, VGE=15V 8 4 0 25 50 75 100 ICE, Collector to Emitter Current (A) 12 Eon, 50A 10 Eoff, 50A 8 6 Eon, 25A 4 2 6 Eoff, 25A 0 TJ = 125°C 4 TJ = 25°C 2 0 25 50 75 100 ICE, Collector to Emitter Current (A) 125 Switching Energy Losses vs Junction Temp. 8 Switching Energy Losses (mJ) 14 VCE = 600V VGE = 15V RG = 5Ω 0 Switching Energy Losses vs Gate Resistance 18 16 125 8 125 VCE = 600V VGE = 15V TJ= 125°C 25 50 75 100 ICE, Collector to Emitter Current (A) Turn-Off Energy Loss vs Collector Current Turn-On Energy Loss vs Collector Current 28 0 Switching Energy Losses (mJ) 0 VCE = 600V VGE = 15V RG = 5Ω 6 Eon, 50A 4 Eoff, 50A 2 Eon, 25A Eoff, 25A 0 0 10 20 30 40 Gate Resistance (Ohms) 50 0 25 50 75 100 TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 125 5-6 APTGF50DH120T – Rev1 March, 2004 25 50 75 100 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Eon, Turn-On Energy Loss (mJ) 0 APTGF50DH120T Minimum Switching Safe Operating Area 160 Cies IC, Collector Current (A) C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage 10000 1000 Coes 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 120 100 80 60 40 20 Cres 100 140 0 50 0 400 800 1200 VCE, Collector to Emitter Voltage (V) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.45 0.4 0.9 0.35 0.7 0.3 0.25 0.5 0.2 0.15 0.3 0.1 0.05 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) VCE = 600V D = 50% RG = 5Ω TJ = 125°C 60 50 40 30 20 10 0 10 20 30 40 50 IC, Collector Current (A) 60 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6-6 APTGF50DH120T – Rev1 March, 2004 Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70