APTGF50X60T3G 3 Phase bridge NPT IGBT Power Module 15 VCES = 600V IC = 50A* @ Tc = 80°C Application • Motor control 31 16 19 20 23 29 25 30 18 11 10 14 22 8 4 7 3 28 R1 13 12 2 It is recommended to connect a decoupling capacitor between pins 31 & 2 to reduce switching overvoltages, if DC Power is connected between pins 15, 16 & 12. Pins 15 & 16 must be shorted together. 28 27 26 25 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS compliant 20 19 18 23 22 29 16 30 15 31 14 32 13 2 3 4 7 8 Features • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance • High level of integration • Internal thermistor for temperature monitoring 10 11 12 Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operating Area TC = 25°C Max ratings 600 65 50 * 230 ±20 250 Tj = 125°C 100A @ 500V TC = 25°C TC = 80°C TC = 25°C Unit V A V W July, 2007 Parameter Collector - Emitter Breakdown Voltage * Specification of IGBT device but output current must be limited to 40A at Tc=80°C not to exceed a connectors temperature greater than 120°C. These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-6 APTGF50X60T3G – Rev 0 Symbol VCES APTGF50X60T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min Tj = 25°C Tj = 125°C T j = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 1mA VGE = 20V, VCE = 0V Typ VGE = 0V VCE = 600V 1.7 2.0 2.2 4 Max 250 500 2.45 Unit µA V 6 400 V nA Max Unit Dynamic Characteristics Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate – Emitter Charge Gate – Collector Charge Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Fall Time Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Min VGE = 15V VBus = 300V IC = 50A Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω VGE = 15V Tj = 125°C VBus = 400V IC = 50A Tj = 125°C RG = 2.7Ω Typ 2200 323 200 166 20 100 40 9 pF nC ns 120 12 42 10 ns 130 21 0.5 mJ 1 Reverse diode ratings and characteristics IRM Min IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Max 600 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current Typ VR=600V IF = 30A IF = 60A IF = 30A IF = 30A VR = 400V di/dt =200A/µs www.microsemi.com V Tj = 25°C Tj = 125°C Tc = 80°C Unit 25 500 Tj = 125°C 30 1.8 2.2 1.5 Tj = 25°C 25 Tj = 125°C Tj = 25°C 160 35 Tj = 125°C 480 µA A 2.2 V July, 2007 VRRM Test Conditions ns nC 2-6 APTGF50X60T3G – Rev 0 Symbol Characteristic APTGF50X60T3G Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Resistance @ 25°C R25 B 25/85 T25 = 298.15 K RT = Min Typ 50 3952 Max Unit kΩ K Min Typ Max 0.5 1.2 Unit R25 T: Thermistor temperature 1 1 RT: Thermistor value at T − exp B25 / 85 T25 T Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt IGBT Diode Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M4 2500 -40 -40 -40 2.5 °C/W V 150 125 100 4.7 110 °C N.m g 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3-6 APTGF50X60T3G – Rev 0 28 17 1 July, 2007 SP3 Package outline (dimensions in mm) APTGF50X60T3G Typical Performance Curve Output characteristics (VGE=15V) Output Characteristics (VGE=10V) 150 TJ=-55°C 250µs Pulse Test < 0.5% Duty cycle Ic, Collector Current (A) TJ=25°C 100 TJ=125°C 50 0 250µs Pulse Test < 0.5% Duty cycle 100 TJ=25°C 50 TJ=125°C 0 0 1 2 3 4 0 VCE, Collector to Emitter Voltage (V) 1 2 3 VCE, Collector to Emitter Voltage (V) Transfer Characteristics 250µs Pulse Test < 0.5% Duty cycle 125 100 75 50 TJ=125°C 25 TJ=-55°C TJ=25°C 0 1 2 3 4 5 6 7 8 9 VGE, Gate to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle 7 6 Ic=100A 5 4 3 Ic=50A 2 1 Ic=25A 0 6 8 10 12 14 14 VCE=300V 12 VCE=480V 10 8 6 4 2 0 0 25 50 75 100 125 150 175 200 Gate Charge (nC) On state Voltage vs Gate to Emitter Volt. 8 VCE=120V IC = 50A TJ = 25°C 16 10 VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) 0 4 Gate Charge 18 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 150 On state Voltage vs Junction Temperature 4 3.5 Ic=100A 3 2.5 Ic=50A 2 1.5 Ic=25A 1 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.5 0 16 -50 VGE, Gate to Emitter Voltage (V) Breakdown Voltage vs Junction Temp. -25 0 25 50 75 100 TJ, Junction Temperature (°C) 125 DC Collector Current vs Case Temperature 80 1.10 1.00 0.90 0.80 0.70 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) www.microsemi.com 70 60 50 40 July, 2007 1.20 Ic, DC Collector Current (A) Collector to Emitter Breakdown Voltage (Normalized) TJ=-55°C 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 4-6 APTGF50X60T3G – Rev 0 Ic, Collector Current (A) 150 APTGF50X60T3G Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VGE = 15V 50 40 Tj = 125°C VCE = 400V RG = 2.7Ω 30 20 0 25 50 75 100 125 200 175 150 VGE=15V, TJ=125°C 125 100 50 150 0 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current VCE = 400V RG = 2.7Ω tf, Fall Time (ns) tr, Rise Time (ns) VGE=15V, TJ=125°C 125 150 40 TJ = 125°C 30 20 TJ = 25°C 0 0 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) 0 150 Turn-On Energy Loss vs Collector Current TJ=125°C, VGE=15V VCE = 400V RG = 2.7Ω 1.5 Eoff, Turn-off Energy Loss (mJ) 2 Eon, Turn-On Energy Loss (mJ) 100 10 10 1 0.5 0 0 25 50 75 100 125 2.5 25 50 75 100 125 ICE, Collector to Emitter Current (A) 150 Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 2.7Ω 2 TJ = 125°C 1.5 1 0.5 0 150 0 ICE, Collector to Emitter Current (A) 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 3 120 Eon, 50A 2 1.5 Eoff, 50A 1 0.5 100 80 60 July, 2007 VCE = 400V VGE = 15V TJ= 125°C 2.5 IC, Collector Current (A) Switching Energy Losses (mJ) 75 VCE = 400V, VGE = 15V, RG = 2.7Ω 50 40 20 50 Current Fall Time vs Collector Current 60 30 25 ICE, Collector to Emitter Current (A) 60 50 VGE=15V, TJ=25°C VCE = 400V RG = 2.7Ω 75 40 20 Eon, 50A 0 0 0 5 10 15 20 Gate Resistance (Ohms) 25 0 200 400 600 VCE, Collector to Emitter Voltage (V) www.microsemi.com 5-6 APTGF50X60T3G – Rev 0 td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current 60 APTGF50X60T3G Capacitance vs Collector to Emitter Voltage Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) C, Capacitance (pF) 10000 Cies 1000 Coes Cres 100 0 10 20 30 40 50 240 VCE = 400V D = 50% RG = 2.7Ω TJ = 125°C TC= 75°C 200 160 120 80 hard switching 40 0 0 VCE, Collector to Emitter Voltage (V) 20 40 60 80 100 IC, Collector Current (A) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.4 0.7 0.3 0.5 0.2 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) 1 10 July, 2007 0.5 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 6-6 APTGF50X60T3G – Rev 0 Thermal Impedance (°C/W) 0.6