APTGT75X120RTP3 APTGT75X120BTP3 Input rectifier bridge + Brake + 3 Phase Bridge Trench IGBT® Power Module VCES = 1200V IC = 75A @ Tc = 80°C Application • AC Motor control Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring • • • • • APTGT75X120RTP3: Without Brake (Pin 7 & 14 not connected) 21 20 19 18 17 16 15 14 13 12 11 10 22 Benefits 9 8 23 7 24 1 2 3 4 5 • • • • • • • • Low conduction losses Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile 6 Symbol VRRM ID IFSM Parameter Repetitive Peak Reverse Voltage DC Forward Current Surge Forward Current tp = 10ms TC = 80°C Tj = 25°C Max ratings 1600 80 500 Tj = 150°C 400 Unit V A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-4 APTGT75X120BTP3 – Rev 0, 1. Absolute maximum ratings Diode rectifier Absolute maximum ratings September 2003 All ratings @ Tj = 25°C unless otherwise specified APTGT75X120RTP3 APTGT75X120BTP3 Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD IF Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation DC Forward Current IGBT & Diode Inverter Symbol VCES IC ICM VGE PD RBSOA IF IFRM TC = 25°C TC = 80°C Absolute maximum ratings Parameter Collector - Emitter Breakdown Voltage TC = 25°C TC = 80°C TC = 25°C Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area DC Forward Current Repetitive Peak Forward Current 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol IR VF RthJC TC = 25°C TC = 80°C TC = 25°C Characteristic Reverse Current Forward Voltage Junction to Case TC = 25°C Tj = 125°C TC = 80°C tp = 1ms Test Conditions VR = 1600V Tj = 150°C Tj = 150°C IF = 75A IGBT Brake & Diode (only for APTGT75X120BTP3) Electrical Characteristics Symbol Characteristic ICES Test Conditions Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Cies Coes Cres Gate Threshold Voltage Gate – Emitter Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance VF Forward Voltage RthJC Junction to Case Max ratings 1200 60 50 100 ±20 200 25 Unit V Max ratings 1200 105 75 150 ±20 350 150A @ 1100V 75 150 Unit V Min Min VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 50A Tj = 125°C VGE = VCE , IC = 2mA VGE = 20V, VCE = 0V VGE = 0V, VCE = 25V f = 1MHz Tj = 25°C VGE = 0V IF = 25A Tj = 125°C IGBT Diode APT website – http://www.advancedpower.com Typ 3 1.2 Typ 5.0 1.7 2.0 5.8 3600 188 163 1.6 1.8 V W A A V W A Max Unit mA V 0.65 °C/W Max Unit 400 1.4 A µA 2.1 6.5 600 V V nA September 2003 Symbol VCES pF V 0.6 1.2 °C/W 2-4 APTGT75X120BTP3 – Rev 0, IGBT & Diode Brake (only for APTGT75X120BTP3) Absolute maximum ratings APTGT75X120RTP3 APTGT75X120BTP3 IGBT & Diode Inverter Electrical Characteristics Collector Emitter on Voltage VGE(th) IGES Cies Coss Crss Td(on) Tr Td(off) Gate Threshold Voltage Gate – Emitter Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Tf Td(on) Tr Td(off) Tf Eoff Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy VF Forward Voltage Qrr Reverse Recovery Charge RthJC VGE = 0V IF = 75A IF = 75A VR = 600V di/dt=825A/µs Min Typ 5.0 4 1.7 2.0 5.8 Tj = 25°C 8 Tj = 125°C 14 Symbol Characteristic R25 Resistance @ 25°C B 25/50 T25 = 298.16 K RT = R25 exp B25 / 50 1 1 − T25 T 6.5 500 Unit V mA V V nA pF ns 65 285 45 520 90 9.4 1.6 1.6 Tj = 25°C Tj = 125°C Temperature sensor NTC 2.1 5345 280 242 260 30 420 IGBT Diode Junction to Case Max 1200 ns mJ 2.2 V µC 0.35 0.58 °C/W Min Typ 5 3375 Max Unit kΩ K Min Typ Max Unit T: Thermistor temperature RT: Thermistor value at T 3. Thermal and package characteristics Symbol Characteristic RMS Isolation Voltage, any terminal to case t =1 min, VISOL I isol<1mA, 50/60Hz TJ Operating junction temperature range TSTG Storage Temperature Range TC Operating Case Temperature To Heatsink Torque Mounting torque Wt Package Weight 2500 M5 APT website – http://www.advancedpower.com -40 -40 -40 September 2003 VCE(on) Test Conditions VGE = 0V, IC = 500µA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 75A Tj = 125°C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 75A RG = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 75A RG = 4.7Ω V 150 125 125 3.3 300 °C N.m g 3-4 APTGT75X120BTP3 – Rev 0, Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current APTGT75X120RTP3 APTGT75X120BTP3 4. Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 4-4 APTGT75X120BTP3 – Rev 0, September 2003 PIN 24