APTM50AM24S Phase leg Series & parallel diodes MOSFET Power Module VDSS = 500V RDSon = 24mΩ max @ Tj = 25°C ID = 150A @ Tc = 25°C Application • Motor control • Switched Mode Power Supplies • Uninterruptible Power Supplies Features • • • VBUS 0/VBUS OUT S1 • Benefits G2 Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 500 150 110 600 ±30 24 1250 24 30 1300 Unit V A V mΩ W A June, 2004 • • • • S2 mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM50AM24S – Rev 1 G1 Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration APTM50AM24S All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Tr Td(off) Turn-on Delay Time Rise Time Turn-off Delay Time Tf Min 500 VGS = 0V,VDS = 500V T j = 25°C VGS = 0V,VDS = 400V Tj = 125°C VGS = 10V, ID = 75A VGS = VDS, ID = 6mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Min VGS = 10V VBus = 250V ID = 150A Symbol Characteristic IF(A V) Maximum Average Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 133V di/dt = 400A/µs IF = 120A VR = 133V di/dt = 400A/µs VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions 50% duty cycle IF = 120A IF = 240A IF = 120A IF = 120A VR = 400V di/dt = 400A/µs IF = 120A VR = 400V di/dt = 400A/µs 500 3 24 5 ±500 Unit V µA mA mΩ V nA Max Unit nF nC 216 10 17 50 Tj = 125°C Typ 120 1.1 1.4 0.9 Tj = 25°C 31 Tj = 125°C 60 Tj = 25°C 120 Tj = 125°C 500 Tc = 85°C Min Tj = 125°C Typ 120 1.6 1.9 1.4 Tj = 25°C 130 Tj = 125°C 170 Tj = 25°C 440 Tj = 125°C 1840 Tc = 70°C APT website – http://www.advancedpower.com ns 41 Min Parallel diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current Typ 19.6 4.2 0.3 434 Max 120 Series diode ratings and characteristics VF 3 Inductive switching @ 125°C VGS = 15V VBus = 333V ID = 150A R G = 0.8Ω Fall Time Typ Max Unit A 1.15 V ns nC Max Unit A 1.8 V June, 2004 IDSS Test Conditions VGS = 0V, ID = 1.5mA ns nC 2–6 APTM50AM24S – Rev 1 Symbol Characteristic BVDSS Drain - Source Breakdown Voltage APTM50AM24S Thermal and package characteristics Symbol Characteristic Min Transistor Diode serie Diode parallel RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.10 0.46 0.46 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTM50AM24S – Rev 1 June, 2004 Package outline APTM50AM24S Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.1 0.02 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 8V VGS=10&15V 480 7V 360 6.5V 240 6V 120 VDS > ID(on)xR DS(on)MAX 250µs pulse test @ < 0.5 duty cycle 420 7.5V I D, Drain Current (A) I D, Drain Current (A) 10 480 600 5.5V 360 300 240 180 TJ =25°C 120 60 TJ =125°C TJ=-55°C 0 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 RDS(on) vs Drain Current 1.20 Normalized to VGS=10V @ 75A 1.15 2 3 4 5 6 7 8 DC Drain Current vs Case Temperature 160 VGS=10V 1.10 VGS=20V 1.05 1 VGS, Gate to Source Voltage (V) I D, DC Drain Current (A) 1.00 0.95 0.90 120 80 40 0 0 60 120 180 240 ID, Drain Current (A) 300 360 25 50 75 100 125 TC, Case Temperature (°C) 150 June, 2004 RDS(on) Drain to Source ON Resistance 1 APT website – http://www.advancedpower.com 4–6 APTM50AM24S – Rev 1 Thermal Impedance (°C/W) 0.12 1.1 1.0 0.9 0.8 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS=10V ID=75A 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Threshold Voltage vs Temperature Maximum Safe Operating Area 1000 1.1 ID, Drain Current (A) VGS (TH), Threshold Voltage (Normalized) 1.2 1.0 0.9 0.8 0.7 0.6 100 limited by RDSon 1ms 10 10ms Single pulse TJ =150°C 1 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage VGS , Gate to Source Voltage (V) 100000 Ciss 10000 Coss 1000 Crss 100 10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50 10 100 1000 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 14 V DS=100V I D=150A 12 T =25°C J V =250V DS 10 VDS=400V 8 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 June, 2004 C, Capacitance (pF) 100µs limited by R DSon APT website – http://www.advancedpower.com 5–6 APTM50AM24S – Rev 1 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTM50AM24S APTM50AM24S Delay Times vs Current Rise and Fall times vs Current 60 80 VDS=333V RG=0.8Ω TJ=125°C L=100µH 60 td(off) 40 t r and tf (ns) t d(on) and td(off) (ns) 50 V DS =333V RG =0.8Ω T J=125°C L=100µH 30 20 td(on) tf 40 20 tr 10 0 0 30 80 130 180 230 ID, Drain Current (A) 280 30 5 4 Eoff 2 1 280 VDS=333V ID=150A TJ=125°C L=100µH 6 Eoff Eon 4 2 0 0 30 80 130 180 230 0 280 ID, Drain Current (A) Operating Frequency vs Drain Current IDR, Reverse Drain Current (A) VDS=333V D=50% RG=0.8Ω T J=125°C 500 400 300 200 100 0 30 60 90 120 2 3 4 5 6 7 8 9 150 1000 Source to Drain Diode Forward Voltage TJ =150°C 100 TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM50AM24S – Rev 1 June, 2004 ID, Drain Current (A) 1 Gate Resistance (Ohms) 600 Frequency (kHz) 230 Switching Energy vs Gate Resistance Eon 3 180 8 Switching Energy (mJ) Switching Energy (mJ) VDS=333V RG=0.8Ω T J=125°C L=100µH 6 130 I D, Drain Current (A) Switching Energy vs Current 7 80