ADPOW APTM100A13D

APTM100A13D
Phase leg
with Series diodes
MOSFET Power Module
VDSS = 1000V
RDSon = 130mΩ max @ Tj = 25°C
ID = 65A @ Tc = 25°C
Application
•
Zero Current Switching resonant mode
Features
•
•
•
•
0/VBUS
OUT
Benefits
•
•
•
•
S2
G2
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
65
49
240
±30
130
1250
24
30
1300
Unit
V
A
V
mΩ
W
A
July, 2004
VBUS
S1
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1-6
APTM100A13D – Rev 0
G1
Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- M5 power connectors
High level of integration
APTM100A13D
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Tr
Td(off)
Tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Test Conditions
VGS = 0V, ID = 1.5mA
Min
1000
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 32.5A
VGS = VDS, ID = 6mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Typ
3
Min
VGS = 10V
VBus = 500V
ID = 65A
Typ
15.2
2.6
0.44
562
Max
600
2
130
5
±450
Unit
V
µA
mA
mΩ
V
nA
Max
Unit
nF
nC
75
363
Inductive switching @ 125°C
VGS = 15V
VBus =667V
ID = 65A
R G = 0.5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 65A, R G = 0.5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 65A, R G = 0.5Ω
9
9
50
24
ns
2.13
mJ
0.46
4.5
mJ
0.57
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
VF
Characteristic
Test Conditions
Min
1000
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current
Maximum Average Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VR=1000V
Tj = 125°C
50% duty cycle
IF = 120A
IF = 240A
IF = 120A
IF = 120A
VR = 670V
di/dt = 400A/µs
IF = 120A
VR = 670V
di/dt = 400A/µs
T c = 100 °C
Typ
1
Tj = 125°C
120
1.9
2.2
1.7
Tj = 25°C
280
Tj = 125°C
350
Tj = 25°C
1.5
Tj = 125°C
7.2
APT website – http://www.advancedpower.com
Max
Unit
V
mA
A
2.5
V
July, 2004
Symbol
VRRM
IRM
IF(A V)
ns
µC
2-6
APTM100A13D – Rev 0
Series diode ratings and characteristics
APTM100A13D
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Series diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.10
0.46
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3-6
APTM100A13D – Rev 0
July, 2004
Package outline
APTM100A13D
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
360
7V
6.5V
VGS=15&10V
150
120
6V
90
60
5.5V
30
5V
ID, Drain Current (A)
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
300
240
180
120
TJ=25°C
60
0
TJ=125°C
0
4
8
12
16
20
24
28
0
VGS=10V
1.2
VGS=20V
1.1
3
4
5
6
7
8
9 10
70
ID, DC Drain Current (A)
Normalized to
VGS =10V @ 32.5A
1.3
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
1
0.9
0.8
60
50
40
30
20
10
0
0
30
60
90
120
ID, Drain Current (A)
150
180
25
50
75
100
125
150
TC, Case Temperature (°C)
July, 2004
RDS(on) Drain to Source ON Resistance
TJ =-55°C
0
APT website – http://www.advancedpower.com
4-6
APTM100A13D – Rev 0
I D, Drain Current (A)
180
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=32.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100µs
limited by RDSon
100
1ms
10
10ms
Single pulse
TJ =150°C
100ms
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=65A
TJ=25°C
12
10
V DS =200V
V DS =500V
8
VDS=800V
6
4
2
0
0
120 240 360 480 600 720 840
Gate Charge (nC)
July, 2004
0
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5-6
APTM100A13D – Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100A13D
APTM100A13D
Delay Times vs Current
t d(off)
50
40
40
tr and tf (ns)
VDS=667V
RG=0.5Ω
T J=125°C
L=100µH
30
20
t d(on)
30
20
10
10
0
30
40
50
60
70
80
90 100
20
30
40 50 60 70 80
I D, Drain Current (A)
ID, Drain Current (A)
90 100
Switching Energy vs Gate Resistance
Switching Energy vs Current
6
VDS=667V
RG=0.5Ω
T J=125°C
L=100µH
7
6
5
Switching Energy (mJ)
8
Eon
4
3
2
Eoff
1
0
5
Eon
4
V DS=667V
ID=65A
T J=125°C
L=100µH
3
2
Eoff
1
0
20
30
40
50
60 70
80
90 100
0
1
ID, Drain Current (A)
2
3
4
5
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
250
ZCS
200
Hard
switching
150
I DR, Reverse Drain Current (A)
300
VDS=667V
D=50%
RG=0.5Ω
T J=125°C
T C=75°C
100
50
0
10
20
30
40
50
ID, Drain Current (A)
60
TJ =150°C
100
TJ =25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
July, 2004
Switching Energy (mJ)
tr
0
20
Frequency (kHz)
tf
VDS=667V
RG=0.5Ω
T J=125°C
L=100µH
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6-6
APTM100A13D – Rev 0
td(on) and td(off) (ns)
Rise and Fall times vs Current
50
60