ADPOW APTM100DAM90

APTM100DAM90
CR1
OUT
Q2
G2
S2
0/VBUS
VBUS
0/VBUS
OUT
S2
G2
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
78
59
312
±30
90
1250
25
50
3000
Unit
V
A
V
mΩ
W
A
July, 2004
VBUS
VDSS = 1000V
RDSon = 90mΩ max @ Tj = 25°C
ID = 78A @ Tc = 25°C
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM100DAM90– Rev 0
Boost chopper
MOSFET Power Module
APTM100DAM90
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Diode ratings and characteristics
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min
1000
VGS = 0V,VDS = 1000V
T j = 25°C
VGS = 0V,VDS = 800V
T j = 125°C
VGS = 10V, ID = 39A
VGS = VDS, ID = 10mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Typ
3
Min
VGS = 10V
VBus = 500V
ID = 78A
Typ
20.7
3.5
0.64
744
Unit
V
1
3
90
5
±250
mΩ
V
nA
Max
Unit
mA
nF
nC
488
18
12
40
3.6
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 78A, R G = 1.2Ω
5.7
mJ
2.5
mJ
3.1
Min
Tj = 125°C
Typ
100
1.9
2.2
1.7
Tj = 25°C
300
Tj = 125°C
360
Tj = 25°C
800
Tj = 125°C
4050
Tc = 70°C
ns
155
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 78A, R G = 1.2Ω
Test Conditions
50% duty cycle
IF = 100A
IF = 200A
IF = 100A
IF = 100A
VR = 667V
di/dt = 200A/µs
IF = 100A
VR = 667V
di/dt = 200A/µs
Max
96
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 78A
R G =1.2Ω
Tf
VF
Test Conditions
VGS = 0V, ID = 1mA
Max
Unit
A
2.5
V
ns
nC
July, 2004
IDSS
Characteristic
Drain - Source Breakdown Voltage
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
APT website – http://www.advancedpower.com
2–6
APTM100DAM90– Rev 0
Symbol
BVDSS
APTM100DAM90
Thermal and package characteristics
Symbol Characteristic
Min
Transistor
Diode
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Torque
Mounting torque
Wt
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.1
0.6
Unit
°C/W
V
150
125
100
5
3.5
280
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM100DAM90– Rev 0
July, 2004
Package outline
APTM100DAM90
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.12
0.1
0.9
0.08
0.7
0.06
0.5
0.04
0.3
0.02
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
240
320
7V
160
6.5V
120
6V
80
5.5V
40
VDS > I D(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
280
ID, Drain Current (A)
240
200
160
120
TJ =25°C
80
40
5V
0
0
5
10
15
20
25
TJ =125°C
30
0
VGS=10V
1.1
VGS=20V
1
3
4
5
6
7
8
9
80
Normalized to
VGS =10V @ 39A
1.2
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
0.9
0.8
70
60
50
40
30
20
10
0
0
40
80
120
160
ID, Drain Current (A)
200
240
25
50
75
100
125
150
TC, Case Temperature (°C)
July, 2004
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
1.4
TJ =-55°C
0
APT website – http://www.advancedpower.com
4–6
APTM100DAM90– Rev 0
I D, Drain Current (A)
V GS=15, 10&8V
200
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=39A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
limited by R DSon
100
1ms
10
10ms
Single pulse
TJ =150°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
1000
Crss
100
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=78A
TJ=25°C
12
10
VDS=200V
V DS =500V
V DS=800V
8
6
4
2
0
0
200
400
600
800
1000
Gate Charge (nC)
July, 2004
0
10
100
1000
VDS , Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5–6
APTM100DAM90– Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100DAM90
APTM100DAM90
Delay Times vs Current
Rise and Fall times vs Current
80
t d(off)
160
V DS=670V
RG =1.2Ω
T J=125°C
L=100µH
120
80
0
40
tr
0
20
40
60
80
100 120 140 160
20
40
60
80 100 120 140 160
I D, Drain Current (A)
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
14
Eon
VDS=670V
RG=1.2Ω
TJ=125°C
L=100µH
8
6
Switching Energy (mJ)
Switching Energy (mJ)
10
Eoff
4
2
0
V DS=670V
ID=78A
T J=125°C
L=100µH
12
10
Eoff
8
Eon
6
4
2
0
20
40
60
80
100 120 140 160
0
2
I D, Drain Current (A)
4
6
8
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
I DR, Reverse Drain Current (A)
250
ZVS
200
Frequency (kHz)
tf
20
td(on)
40
VDS=670V
RG=1.2Ω
TJ=125°C
L=100µH
60
tr and tf (ns)
td(on) and td(off) (ns)
200
ZCS
150
VDS=670V
D=50%
RG=1.2Ω
T J=125°C
T C=75°C
100
50
Hard
switching
0
10
20 30 40 50
ID, Drain Current (A)
60
70
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM100DAM90– Rev 0
July, 2004
0
100