APTM100DAM90 CR1 OUT Q2 G2 S2 0/VBUS VBUS 0/VBUS OUT S2 G2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS 7® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Low profile Absolute maximum ratings Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 1000 78 59 312 ±30 90 1250 25 50 3000 Unit V A V mΩ W A July, 2004 VBUS VDSS = 1000V RDSon = 90mΩ max @ Tj = 25°C ID = 78A @ Tc = 25°C mJ These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1–6 APTM100DAM90– Rev 0 Boost chopper MOSFET Power Module APTM100DAM90 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Dynamic Characteristics Symbol Ciss Coss Crss Qg Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Eon Turn-on Switching Energy X Eoff Turn-off Switching Energy Y Diode ratings and characteristics Symbol Characteristic IF(A V) Maximum Average Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min 1000 VGS = 0V,VDS = 1000V T j = 25°C VGS = 0V,VDS = 800V T j = 125°C VGS = 10V, ID = 39A VGS = VDS, ID = 10mA VGS = ±30 V, VDS = 0V Test Conditions VGS = 0V VDS = 25V f = 1MHz Typ 3 Min VGS = 10V VBus = 500V ID = 78A Typ 20.7 3.5 0.64 744 Unit V 1 3 90 5 ±250 mΩ V nA Max Unit mA nF nC 488 18 12 40 3.6 Inductive switching @ 125°C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2Ω 5.7 mJ 2.5 mJ 3.1 Min Tj = 125°C Typ 100 1.9 2.2 1.7 Tj = 25°C 300 Tj = 125°C 360 Tj = 25°C 800 Tj = 125°C 4050 Tc = 70°C ns 155 Inductive switching @ 25°C VGS = 15V, VBus = 670V ID = 78A, R G = 1.2Ω Test Conditions 50% duty cycle IF = 100A IF = 200A IF = 100A IF = 100A VR = 667V di/dt = 200A/µs IF = 100A VR = 667V di/dt = 200A/µs Max 96 Inductive switching @ 125°C VGS = 15V VBus = 670V ID = 78A R G =1.2Ω Tf VF Test Conditions VGS = 0V, ID = 1mA Max Unit A 2.5 V ns nC July, 2004 IDSS Characteristic Drain - Source Breakdown Voltage X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. APT website – http://www.advancedpower.com 2–6 APTM100DAM90– Rev 0 Symbol BVDSS APTM100DAM90 Thermal and package characteristics Symbol Characteristic Min Transistor Diode RthJC Junction to Case VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.1 0.6 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g APT website – http://www.advancedpower.com 3–6 APTM100DAM90– Rev 0 July, 2004 Package outline APTM100DAM90 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.12 0.1 0.9 0.08 0.7 0.06 0.5 0.04 0.3 0.02 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 240 320 7V 160 6.5V 120 6V 80 5.5V 40 VDS > I D(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 280 ID, Drain Current (A) 240 200 160 120 TJ =25°C 80 40 5V 0 0 5 10 15 20 25 TJ =125°C 30 0 VGS=10V 1.1 VGS=20V 1 3 4 5 6 7 8 9 80 Normalized to VGS =10V @ 39A 1.2 2 DC Drain Current vs Case Temperature RDS(on) vs Drain Current 1.3 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) 0.9 0.8 70 60 50 40 30 20 10 0 0 40 80 120 160 ID, Drain Current (A) 200 240 25 50 75 100 125 150 TC, Case Temperature (°C) July, 2004 RDS(on) Drain to Source ON Resistance VDS, Drain to Source Voltage (V) 1.4 TJ =-55°C 0 APT website – http://www.advancedpower.com 4–6 APTM100DAM90– Rev 0 I D, Drain Current (A) V GS=15, 10&8V 200 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 2.5 VGS =10V ID=39A 2.0 1.5 1.0 0.5 0.0 -50 -25 Threshold Voltage vs Temperature 50 75 100 125 150 Maximum Safe Operating Area 100µs 1.1 I D, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) 25 1000 1.2 1.0 0.9 0.8 0.7 limited by R DSon 100 1ms 10 10ms Single pulse TJ =150°C 1 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) 1 Capacitance vs Drain to Source Voltage Ciss 10000 Coss 1000 Crss 100 10 20 30 40 50 VDS, Drain to Source Voltage (V) 14 ID=78A TJ=25°C 12 10 VDS=200V V DS =500V V DS=800V 8 6 4 2 0 0 200 400 600 800 1000 Gate Charge (nC) July, 2004 0 10 100 1000 VDS , Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 100000 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) APT website – http://www.advancedpower.com 5–6 APTM100DAM90– Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM100DAM90 APTM100DAM90 Delay Times vs Current Rise and Fall times vs Current 80 t d(off) 160 V DS=670V RG =1.2Ω T J=125°C L=100µH 120 80 0 40 tr 0 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 I D, Drain Current (A) ID, Drain Current (A) Switching Energy vs Gate Resistance Switching Energy vs Current 14 Eon VDS=670V RG=1.2Ω TJ=125°C L=100µH 8 6 Switching Energy (mJ) Switching Energy (mJ) 10 Eoff 4 2 0 V DS=670V ID=78A T J=125°C L=100µH 12 10 Eoff 8 Eon 6 4 2 0 20 40 60 80 100 120 140 160 0 2 I D, Drain Current (A) 4 6 8 Gate Resistance (Ohms) Operating Frequency vs Drain Current Source to Drain Diode Forward Voltage 1000 I DR, Reverse Drain Current (A) 250 ZVS 200 Frequency (kHz) tf 20 td(on) 40 VDS=670V RG=1.2Ω TJ=125°C L=100µH 60 tr and tf (ns) td(on) and td(off) (ns) 200 ZCS 150 VDS=670V D=50% RG=1.2Ω T J=125°C T C=75°C 100 50 Hard switching 0 10 20 30 40 50 ID, Drain Current (A) 60 70 TJ=150°C TJ=25°C 10 1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V) APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 6–6 APTM100DAM90– Rev 0 July, 2004 0 100