ARF1519 D ARF1519 BeO 104T-100 G RF POWER MOSFET S N - CHANNEL ENHANCEMENT MODE 250V 750W 25MHz The ARF1519 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 25 MHz. • Specified 250 Volt, 13.56 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75% • High Performance Power RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C ARF1519 UNIT 1000 Volts 20 Amps VGS Gate-Source Voltage ±30 Volts PD Total Device Dissipation @ TC = 25°C 1350 Watts TJ,TSTG TL -55 to 200 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 300µA) 1000 On State Drain Voltage 1 (ID(ON) = 10A, VGS = 10V) TYP MAX 5 7 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 300 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 3000 IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±600 g fs Forward Transconductance (VDS = 15V, ID = 10A) IDSS V isolation RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 6mA) 3 14 UNIT Volts µA nA mhos 2500 Volts 2 4 Volts MAX UNIT Characteristic (per package unless otherwise noted) RθJC Junction to Case RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP 0.13 0.09 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com °C/W 050-4935 Rev A Symbol 5-2005 THERMAL CHARACTERISTICS ARF1519 DYNAMIC CHARACTERISTICS Symbol Characteristic MIN TYP MAX 4600 5600 VDS = 150V 310 350 f = 1 MHz 90 120 MAX Test Conditions C iss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VGS = 0V UNIT pF FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 13.56MHz 17 20 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 200V Pout = 750W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 60 20,000 CAPACITANCE (pf) Ciss 1000 Coss 100 Crss 050-4935 Rev A 5-2005 10 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage ID, DRAIN CURRENT (AMPERES) 10,000 50 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @ <0.5 % DUTY CYCLE TJ = -55°C 40 30 20 10 0 0 UNIT TJ = +25°C TJ = +125°C 1 2 3 4 5 6 7 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics 1.2 ARF1519 50 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 45 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 3, Typical Threshold Voltage vs Temperature 6.5V 6V 40 35 30 5.5V 25 20 5V 15 10 4.5V 5 4V 0 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Output Characteristics 0.2 D=0.5 0.05 0.2 0.1 0.01 0.05 0.005 0.02 Note: 0.01 PDM SINGLE PULSE 0.001 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.0001 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 5, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration 10 Table 1 - Typical Class AB Large Signal Impedance -- ARF1519 2.0 13.5 Zin (Ω) 10.6 -j 12.2 0.5 -j 2.7 ZOL (Ω) 31 -j 4.7 15.6 -j 16 Zin - Gate shunted with 25Ω IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 200V 5-2005 F (MHz) 050-4935 Rev A Z JC, THERMAL IMPEDANCE (°C/W) θ 0.1 ARF1519 -- 13.56 MHz Test Circuit 200V L3 C7 C9 Output L2 RF Input C10 C8 L1 C4 C5 T1 C6 DUT C1 C2 C3 C1-C3 1nF X7R 100V smt C4 2x 8.2 nF 1kV COG C5 270pF x2 ATC 100C C7-C10 8.2 nF 1kv COG C11 390 + 27 pF ATC 100C L1 2uH - 22t #24 enam. .312" dia. L2 368 nH - 5t #12 .625" dia .5" l L3 500nH 2t on 850u .5" bead R1 2.2k 0.5W T1 10:1t transformer R1 Parts placement - Not to Scale. 13.56 MHz Test Amp ARF1519 BeO 104T-100 ARF1519 T1 J2 J1 RF 12-04 Thermal Considerations and Package Mounting: 5-2005 HAZARDOUS MATERIAL WARNING 050-4935 Rev A The rated 1350W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.12°C/W. When installed, an additional thermal impedance of 0.1°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. Use 4-40 or M3 screws torqued to 1.2 Nm. The ceramic portion of the device between leads and mounting surface is beryllium oxideBeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area These devices must never be thrown away with general industrial or domestic waste. D .466 .250 G .500 .150r S ARF1519 .250 BeO .750 1.000 1 104T-100 .125d .500 2 3 1.250 1.500 4 .300 .200 .005 .040 1 2 3 4 Drain Source Source Gate