ADPOW ARF450

ARF450
Common Source
Push-Pull Pair
ARF450
BeO
RF POWER MOSFET
N - CHANNEL ENHANCEMENT MODE
150V
500W
11405
120MHz
The ARF450 is a matched pair of RF power transistors in a common source configuration. It is designed for push-pull
or parallel operation in scientific, commercial, medical and industrial RF power amplifier applications up to 120 MHz.
• Specified 150 Volt, 81.36 MHz Characteristics:
•
Output Power = 500 Watts.
•
Gain = 13dB (Class C)
•
Efficiency = 75%
• High Performance Push-Pull RF Package.
• Very High Breakdown for Improved Ruggedness.
• Low Thermal Resistance.
• Nitride Passivated Die for Improved Reliability.
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
ARF450
VDSS
Drain-Source Voltage
450
VDGO
Drain-Gate Voltage
450
ID
VGS
PD
TJ,TSTG
TL
UNIT
Volts
11
Amps
Gate-Source Voltage
±30
Volts
Total Device Dissipation @ TC = 25°C
650
Watts
Continuous Drain Current @ TC = 25°C
-55 to 200
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
VDS(ON)
IDSS
IGSS
gfs
gfs1 gfs2
/
VGS(TH)
∆VGS(TH)
Characteristic / Test Conditions
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
500
On State Drain Voltage
1
TYP
MAX
5
(ID(ON) = 5.5A, VGS = 10V)
25
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
3
Forward Transconductance (VDS = 25V, ID = 5.5A)
Forward Transconductance Ratio (VDS = 25V, ID = 5.5A)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
5.8
Volts
µA
nA
mhos
0.9
1.1
3
5
0.1
Delta Gate Threshold Voltage (VDS = VGS, ID = 50mA)
UNIT
Volts
THERMAL CHARACTERISTICS
Characteristic (per package unless otherwise noted)
MIN
RθJC
Junction to Case (per section)
RθCS
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
TYP
MAX
0.54
0.1
UNIT
°C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA:
405 S.W. Columbia Street
EUROPE:
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382 - 8028
FAX: (541) 388 -0364
Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61
050-4910 Rev C 12-2000
Symbol
DYNAMIC CHARACTERISTICS (per section)
Symbol
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
td(off)
tf
GPS
η
ψ
MIN
TYP
MAX
980
1200
87
120
f = 1 MHz
25
40
VGS = 15V
5
10
VDD = 0.5 VDSS
3.0
7
ID = ID[Cont.] @ 25°C
15
25
RG = 1.6 Ω
3
7
MAX
VGS = 0V
VDS = 150V
Rise Time
Turn-off Delay Time
Fall Time
FUNCTIONAL CHARACTERISTICS
Symbol
ARF450
UNIT
pF
ns
(Push-Pull Configuration)
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 81.36 MHz
12
13
dB
70
75
%
VGS = 0V
Drain Efficiency
Electrical Ruggedness VSWR 10:1
VDD = 150V
Pout = 500W
UNIT
No Degradation in Output Power
1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%.
APT Reserves the right to change, without notice, the specifications and information contained herein.
Per each transistor side unless otherwise specified.
30
25
500
CAPACITANCE (pf)
15
10
Ciss
1000
Pout = 150W
20
GAIN (dB)
3000
Class C
VDD = 150V
Coss
100
Crss
50
5
ID, DRAIN CURRENT (AMPERES)
050-4910 Rev C 12-2000
16
12
45
60
75
90
105
120
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
1
5
10
50
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
50
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
8
4
10
TJ = +125°C
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ID, DRAIN CURRENT (AMPERES)
0
30
10
100us
OPERATION HERE
LIMITED BY RDS (ON)
1ms
5
10ms
1
0.5
100ms
TC =+25°C
TJ =+200°C
SINGLE PULSE
0.1
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
ARF450
25
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
1.2
1.1
1.0
0.9
0.8
0.7
20
VGS=8, 10 & 15V
6.5V
15
6V
10
5.5V
5
5V
4.5V
0.6
-50 -25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
GPS, COMMON SOURCE AMPLIFIER GAIN
(dB)
600
POUT, POWER OUT (WATTS)
VGS = 0
VDD = 150V
f = 81.36 MHz
450
Push-Pull
300
150
0
0
0
6
12
18
24
30
PIN, POWER IN (WATTS)
Figure 7, Typical Power Out vs Power In
1
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
14
VGS = 0
VDD = 150V
12
f = 81.36 MHz
Push-Pull
10
8
6
0
150
300
450
600
POUT, POWER OUT (WATTS)
Figure 8, Typical Common Source Amplifier Gain vs Power Out
D=0.5
0.1
0.2
.05
0.1
0.05
Note:
.01
.005
0.02
0.01
PDM
SINGLE PULSE
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
.001
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Table 1 - Typical Class C Large Signal Input-Output Impedance (per section)
Freq. (MHz)
2.0
13.5
27.0
40.0
65.0
80.0
100.0
Z in (Ω)
23.00 - j 7.0
4.30 - j 9.1
1.00 - j 4.2
0.42 - j 1.7
0.35 + j 1.1
0.56 + j 2.5
0.90 + j 3.8
Z OL (Ω)
93.0 - j 10
63.0 - j 43
32.0 - j 43
17.5 - j 34
7.7 - j 22
5.1 - j 16
3.4 - j 12
Z in - gate shunted by 25Ω
Z OL - conjugate of optimum load impedance for 150W at 150V
050-4910 Rev C 12-2000
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.6
L3
R1
100
TL1
C5
L1
C7
C1 75-380 pF ARCO 465
C2 25-115 pF ARCO 462
C3 -C5 2 nF NPO 500V chip
C6 10 nF 500V chip
C7 .47 uF Ceramic 500V
L1-L2 50 nH 3t # 14 ga .3" dia
L3-L4 .68 uH 12t #24 enam
L5 2t #20 on bead approx 2 uH
R1-R2 100 ohm 1 W
T1 9:1 RF transformer
T2 1:1 coax balun
TL1-TL2 Printed line 1" long
C3
T1
J1
C6
ARF450
+
150V
-
L5
J2
C1
TL2
C2
T2
L2
R2
100
C4
DUT
81.36 MHz Test Circuit
L4
R1
6.8K
+
80 V
-
+
+
Bias 0-6V
R4
10K
-
C3
.47
C2
10n
C1
1
T1
L3
J2
C6
50p
DUT
T1 9:1 RF Transformer on type 43 beads
T2 4:1 RF Transformer. Made from two pieces
of 25 ohm semi-rigid coax with type 43
ferrite bead loading.
R8
20
10W
J1
C4
.1
C5
1n
30 MHz Linear Test Circuit
T2
.875
Typical Mounting
.176
HAZARDOUS MATERIAL
WARNING
1
.375
1
yyyy
;;;;
yy
;;
ARF450
BeO
3
ARF450
6
5,8
7
.582
BeO
11405
1,4
11405
8
2
Clamp
.062
8
.375
.125
.210
.210
.060 typ.
.125
Heat Sink
dims: inches
Thermal Considerations and Package Mounting:
The rated 650W power dissipation is only available when the package mounting surface is at 25˚C and the junction temperature is 200˚C.
The thermal resistance between junctions and case mounting surface
is 0.27 ˚C/W. When installed, an additional thermal impedance of 0.05
˚C/W between the package base and the mounting surface is typical.
Insure that the mounting surface is smooth and flat. Thermal joint com-
050-4910 Rev C 12-2000
Compliant
layer
ARF 450
.005
USA:
405 S.W. Columbia Street
EUROPE:
Chemin de Magret
The ceramic portion of the
device between leads and
mounting surface is beryllium
oxide. Beryllium oxide dust is
highly toxic when inhaled. Care
must be taken during handling
and mounting to avoid damage
to this area. These devices
must never be thrown away with
general industrial or domestic
waste.
pound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to
obtain best results.
The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for
thermal expansion of both the device and the heat sink. An L-clamp,
a compliant layer of plastic or rubber, and a 6-32 (M3.5) screw can
provide the minimum 35 lb required mounting force. T = 4 in-lb.
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382 - 8028
FAX: (541) 388 -0364
Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61