MICROSEMI ARF467FL

ARF467FL
D
G
ARF467FL
S
RF POWER MOSFETs
N - CHANNEL ENHANCEMENT MODE
200V
300W
45MHz
The ARF467FL is a rugged high voltage RF power transistor designed for scientific, commercial, medical and industrial
RF power amplifier applications up to 45 MHz. It has been optimized for both linear and high efficiency classes of
operation.
• Specified 150 Volt, 40.68 MHz Characteristics:
•
Output Power = 300 Watts.
•
Gain = 16dB (Class AB)
•
Efficiency = 75% (Class C)
• Low Cost Flangeless RF Package.
• Low Vth thermal coefficient.
• Low Thermal Resistance.
• Optimized SOA for Superior Ruggedness.
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
ARF467FL
VDSS
Drain-Source Voltage
1000
VDGO
Drain-Gate Voltage
1000
ID
Continuous Drain Current @ TC = 25°C
UNIT
Volts
12
Amps
VGS
Gate-Source Voltage
±30
Volts
PD
Total Power Dissipation @ TC = 25°C
425
Watts
Junction to Case
0.35
°C/W
RθJC
TJ,TSTG
TL
-55 to 175
Operating and Storage Junction Temperature Range
°C
300
Lead Temperature: 0.063" from Case for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA)
1000
RDS(ON)
Drain-Source On-State Resistance
IDSS
1
MAX
1.0
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
g fs
Forward Transconductance (VDS = 25V, ID = 6.5A)
4
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
ohms
µA
±100
nA
9
mhos
5
Volts
6
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
UNIT
Volts
(VGS = 10V, ID = 6.5A)
IGSS
VGS(TH)
TYP
5-2007
Characteristic / Test Conditions
050-4932 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
ARF467FL
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(on)
Turn-on Delay Time
tr
td(off)
tf
MIN
Turn-off Delay Time
Fall Time
UNIT
MAX
1900
VGS = 0V
Rise Time
TYP
VDS = 50V
230
f = 1 MHz
40
VGS = 15V
12
VDD = 500 V
8
ID = 12A @ 25°C
41
RG = 1.6Ω
10
pF
ns
FUNCTIONAL CHARACTERISTICS
Symbol
GPS
Characteristic
Common Source Amplifier Power Gain
Test Conditions
MIN
TYP
f = 40.68 MHz
14
16
dB
70
75
%
VGS = 2.5V
η
Drain Efficiency
ψ
Electrical Ruggedness VSWR 10:1
VDD = 150V
Pout = 300W
MAX
UNIT
No Degradation in Output Power
1 Pulse Test: Pulse width < 380µS, Duty Cycle < 2%
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
4,000
30
Class C
VDD = 150V
25
Ciss
Pout = 150W
CAPACITANCE (pf)
1,000
GAIN (dB)
20
15
10
500
Coss
100
Crss
50
5
0
30
45
60
75
90
105
FREQUENCY (MHz)
Figure 1, Typical Gain vs Frequency
10
.1
1
10
100 200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
120
050-4932 Rev A
30
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
48
TJ = -55°C
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
5-2007
35
25
20
15
10
TJ = +25°C
5
0
TJ = +125°C
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
OPERATION HERE
LIMITED BY RDS (ON)
10
100uS
5
1mS
1
.5
.1
TC =+25°C
TJ =+175°C
SINGLE PULSE
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
10mS
100mS
TYPICAL PERFORMANCE CURVES
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
1.05
1.00
0.95
0.90
0.85
0.80
0.75
-50
ARF467FL
25
1.10
20
8V
VGS = 9V
15
7V
10
5
6V
5V
0
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.35
D = 0.9
0.30
0.7
0.25
0.20
0.5
Note:
0.3
0.10
t1
t2
SINGLE PULSE
0.1
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 7a, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
TJ ( C)
TC ( C)
0.126
0.170
0.0535
Dissipated Power
(Watts)
0.00748F
0.0556F
ZEXT are the external thermal
impedances: Case to sink, sink to
ambient, etc. Set to zero when modeling
only the case to junction.
0.657F
Figure 7b, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
2.0
13.5
27.1
40.7
65
ZIN (Ω)
ZOL (Ω)
18 - j 11
1.3 - j 5
.40 - j 2.6
.20 - j 1.6
.11 + j 0.6
30 - j 1.7
25.7 - j 9.8
18 - j 13.3
12 - j 12.6
6.2 - j 8.9
Zin - Gate shunted with 25Ω
IDQ = 100mA
ZOL - Conjugate of optimum load for 300 W output at Vdd = 150V
5-2007
10-5
050-4932 Rev A
0.05
0
PDM
0.15
ZEXT
Z JC, THERMAL IMPEDANCE (°C/W)
θ
0.40
ARF467FL
L4
R1
Bias +
0-12V -
C7
R3
C6
+
150V
-
C8
L3
R2
RF
Output
C9
RF
Input
C2
R4
L1
C3
TL1
C1
L2
ARF467FL
R5
C5
C4
40.68 MHz Test Circuit
C1 -- 2200pF ATC 700B
C2-C5 -- Arco 465 Mica trimmer
C6-C8 -- .1 µF 500V ceramic chip
C9 -- 3x 2200pF 500V chips COG
L1 -- 3t #22 AWG .25"ID .25 "L ~55nH
L2 -- 5t #16 AWG .312" ID .35"L ~176nH
L3 -- 10t #24 AWG .25"ID ~.5uH
L4 -- VK200-4B ferrite choke 3uH
R1- R3 -- 1kΩ 0.5W
R4- R5 -- 1Ω 1W SMT
TL1 -- 40Ω t-line 0.15 x 2"
C1 is ~1.75" from R4-5.
T3 Package Outline
.125R
4 pls
S
D
S
ARF467FL
.325 +/- .01
.125dia
4 pls
.320
.570
1.250
.330
.100
.100
.210
S
G
S
1.500
.210
.300
Thermal Considerations and Package Mounting:
The rated power dissipation is only available when the
package mounting surface is at 25 C and the junction temperature is 175 C. The thermal resistance between junctions and case mounting surface is 0.3 C/W. When installed, an additional thermal impedance of 0.17 C/W between
the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal
joint compound must be used to reduce the effects of small
surface irregularities. Use the minimum amount necessary
to coat the surface. The heatsink should incorporate a copper heat spreader to obtain best results.
The package design clamps the ceramic base to the
heatsink. A clamped joint maintains the required mounting
pressure while allowing for thermal expansion of both the
base and the heat sink. Four 4-40 (M3) screws provide
the required mounting force. Torque the mounting screws
to 6 in-lb (0.68 N-m).
050-4932 Rev A
5-2007
.005
.040
.200
HAZARDOUS MATERIAL WARNING
The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during
handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste.
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.