S D ARF1505 S D ARF1505 BeO RF POWER MOSFET G 1525-xx S S N - CHANNEL ENHANCEMENT MODE G S 300V 750W 40MHz The ARF1505 is an RF power transistor designed for off-line 300V operation in very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. • Specified 300 Volt, 27.12 MHz Characteristics: • Output Power = 750 Watts. • Gain = 17dB (Class C) • Efficiency > 75% • High Performance Power RF Package. • Very High Breakdown for Improved Ruggedness. • Low Thermal Resistance. • Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C ARF1505 UNIT 1200 Volts 25 Amps VGS Gate-Source Voltage ±30 Volts PD Total Device Dissipation @ TC = 25°C 1500 Watts TJ,TSTG TL -55 to 200 Operating and Storage Junction Temperature Range °C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) Characteristic / Test Conditions MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) 1200 On State Drain Voltage 1 (ID(ON) = 12.5A, VGS = 10V) TYP MAX 8 9.5 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 IGSS Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±400 g fs Forward Transconductance (VDS = 25V, ID = 12.5A) IDSS V isolation RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) VGS(TH) Gate Threshold Voltage (VDS = VGS, ID = 50mA) 5.5 6 UNIT Volts µA nA mhos 2500 Volts 3 5 Volts MAX UNIT Characteristic (per package unless otherwise noted) RθJC Junction to Case RθCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP 0.12 0.09 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com °C/W 050-4922 Rev C Symbol 6-2005 THERMAL CHARACTERISTICS DYNAMIC CHARACTERISTICS Symbol ARF1505 Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-on Delay Time tr td(off) tf MIN TYP MAX 5400 6500 VDS = 200V 300 400 f = 1 MHz 125 160 VGS = 15V 8 VDD = 0.5 VDSS 5 ID = ID[Cont.] @ 25°C 25 RG = 1.6 Ω 13 VGS = 0V Rise Time Turn-off Delay Time Fall Time UNIT pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS η ψ Characteristic Common Source Amplifier Power Gain Test Conditions MIN TYP f = 27.12 MHz 15 17 dB 70 75 % VGS = 0V Drain Efficiency Electrical Ruggedness VSWR 10:1 VDD = 300V Pout = 750W MAX UNIT No Degradation in Output Power 1 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%. APT Reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 20,000 10,000 Ciss CAPACITANCE (pf) 5000 1000 Coss 500 Crss 100 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage 100 VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 50 TJ = -55°C 40 30 20 TJ = +25°C TJ = +125°C 10 0 DATA FOR BOTH SIDES IN PARALLEL ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 050-4922 Rev C 6-2005 60 50 1ms 10 5 1 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics 100us OPERATION HERE LIMITED BY RDS (ON) 10ms TC =+25°C TJ =+200°C SINGLE PULSE 1 5 10 50 100 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area 100ms 35 1.10 30 ARF1505 VGS = 10 & 9V ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.15 1.05 1.00 0.95 0.90 0.85 8V 25 7V 20 15 6V 10 5V 5 0.80 0 0.75 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 4, Typical Threshold Voltage vs Temperature 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics 0.2 D=0.5 0.2 0.1 0.01 0.05 0.02 Note: 0.01 PDM SINGLE PULSE 0.001 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration F (MHz) TYPICAL LARGE SIGNAL INPUT - OUPUT IMPEDANCE CHARACTERISTICS 2.0 13.5 27 40 ZOL (Ω) Zin (Ω) 5.4 - j 9.6 0.30 - j 1.2 0.26 + j .58 0.36 + j 1.6 10 Zin - Gate shunted with 25Ω ZOL - Conjugate of optimum load for 750 Watts output IDQ = 100mA Vdd = 300V 46 - j 10.5 16.4 - j 23 4.9 - j 14.6 2.3 - j 10.3 Clamp 1.065 .250 Thermal Considerations and Package Mounting: S The rated 1500W power dissipation is only available when the package mounting surface is at 25°C and the junction temperature is 200°C. The thermal resistance between junctions and case mounting surface is 0.12 °C/W. When installed, an additional thermal impedance of 0.1°C/W between the package base and the mounting surface is typical. Insure that the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb required mounting force. T = 12 in-lb. D S .500 Heat Sink ARF15-BeO 1525-xx 1.065 .045 S G S .207 .375 .207 .500 .005 .105 typ. HAZARDOUS MATERIAL WARNING D G S The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. 6-2005 0.0001 10-5 050-4922 Rev C Z JC, THERMAL IMPEDANCE (°C/W) θ 0.1 A RF1505 -- 27.12 MHz Test Circ uit 300V L4 C7 L3 C9 C 8 C 10 Output C6 L1 C1 L2 C2 C 12 C5 R1 C3 RF Input C4 T L1 C 11 R2 R3 V bias 135-05 201 J2 R F 11-04 050-4922 Rev C 6-2005 A RF 1500 27 MHz Amp ARF1505 ARF 1505 B eO J1 C1, C7, C8, C11 .047mF 500V cerami disc C2, C12 Arco 465 75-380pF mica trimmer C3 2x 4700pF ATC 700B C4, C9-C10 8200pF 500V NPO ceramic C5 200pF ATC 100E C6 150pF ATC 700B L1 90nH 4t # 18 0.25"d .25"I L2 200nH - 3t # 8 1" dia 1"I L3 6µH - 22t # 24 enam 0.5"dia L4 500nH 2t on 850µ .5" bead R1-R3 1KΩ 1/4W TL1 .112" x 1" (50Ω) Stripline 27 MHz Amp ARF1505 R F 11-04